Patents Examined by Viji N Bernard
  • Patent number: 7393418
    Abstract: A susceptor at least a surface thereof being coated with SiC, includes a recess where an wafer is mounted, the recess having an round portion disposed on a lower portion of an outer circumferential portion of the recess, a ring-shaped SiC crystal growth surface portion provided within the round portion in a range of 0.05 mm or more and 0.3 mm or less defined from an outer circumference vertical portion of the recess and a contact portion, where the susceptor contacts with the wafer on the recess, having a surface roughness Ra in a range of 0.5 ?m or more and 3 ?m or less.
    Type: Grant
    Filed: September 22, 2005
    Date of Patent: July 1, 2008
    Assignee: Covalent Materials Corporation
    Inventor: Masanari Yokogawa