Abstract: A bonded SOI substrate is disclosed using a transparent electrode without causing generation of a leakage current by light in semiconductive devices formed on the substrate when light is incident on the rear face of the substrate, resulting in decreased deterioration of device characteristics and malfunction. A shielding layer is formed between a transparent supporting substrate and a single-crystal silicon layer of an SOI substrate that can shield light incident on the rear face of the substrate. The light shielding layer is preliminarily formed on the supporting substrate prior to bonding of the single-crystal silicon layer to the supporting substrate in an SOI production process by a bonding method.