Abstract: There is provided a MOSFET structure and a method of fabricating the same. The method includes: providing a semiconductor substrate; forming a dummy gate on the semiconductor substrate; forming source/drain regions; selectively etching the dummy gate to a position where a channel is to be formed; and epitaxially growing a channel layer at the position where the channel is to be formed and forming a gate on the channel layer, wherein the channel layer comprises a material of high mobility. Thereby, the channel of the device is replaced with the material of high mobility after the source/drain region is formed, and thus it is possible to suppress the short channel effect and also to improve the device performance.

Abstract: Embodiments of the present invention generally relate to a electromechanical device that has an improved usable lifetime due to the presence of one or more channels that contain and deliver a lubricant material that can reduce the likelihood of stiction occurring between the various moving parts of the device. Embodiments of the present invention also generally include an enclosed device package, and a method of forming the enclosed device package, that has one or more lubricant containing and/or transporting channels that that deliver lubricant material to a device disposed within the enclosed device package. Each lubricant containing channel acts as a ready supply of “fresh” lubricant to prevent stiction from occurring between interacting components of the device disposed within the enclosed region of the device package. The ready supply of “fresh” lubricants may also be used to replenish damaged lubricants (worn-off, broken down, etc) at the contacting surfaces where stiction generally occurs.