Patents Examined by W. A. Mintel
  • Infrared epitaxial detector structure and method of making same
    Patent number: 4689650
    Abstract: Successive layers of a II-VI ternary buffer layer and a II-VI ternary nar-bandpass infrared-absorbing layer are grown by MBE on a III-V binary substrate with low surface defect density. The composition of the buffer layer is chosen to lattice match with the infrared-absorbing layer.
    Type: Grant
    Filed: October 3, 1985
    Date of Patent: August 25, 1987
    Assignee: The United States of America as represented by the Secretary of the Army
    Inventor: John H. Dinan