Patents Examined by Wael Fabmry
  • Spacer - defined dual damascene process method
    Patent number: 6303489
    Abstract: A method of fabricating integrated circuits utilizing dual damascene processing when a soft insulative material, such as a polymer, is used. Vertical and horizontal edges of via and conductive line openings are protected from degradation during a second etching step by, prior to the second etching, depositing a hard mask material on each insulative material layer to protect the horizontal edges and depositing a spacer material to protect the vertical edges.
    Type: Grant
    Filed: June 3, 1998
    Date of Patent: October 16, 2001
    Assignee: Advanced Micro Devices, Inc.
    Inventor: William Scott Bass