Patents Examined by Wael Fabomy
  • Method of forming a low resistance semiconductor device and structure therefor
    Patent number: 6753228
    Abstract: A transistor (10) is formed with a low resistance trench structure that is utilized for a gate (17) of the transistor. The low resistance trench structure facilitates forming a shallow source region (49) that reduces the gate-to-source capacitance.
    Type: Grant
    Filed: October 15, 2002
    Date of Patent: June 22, 2004
    Assignee: Semiconductor Components Industries, L.L.C.
    Inventors: Misbahul Azam, Jeffrey Pearse, Daniel G. Hannoun