Abstract: A method including, in a dielectric material over a contact on a substrate, forming a trench to the contact; introducing an electrode material along the sidewalls of the trench; introducing a phase change material over material along a first sidewall; and modifying the electrode material along the sidewalls such that only the material along the first sidewall acts as a conductive path between the contact and the phase change material. An apparatus including a chalcogenide memory element; a contact; and a heater element comprising two leg portions, a first leg portion coupled to the contact and the chalcogenide memory element, and only the first leg portion acts as a conductive path between the contact and the chalcogenide memory element.