Abstract: A semiconductor structure is provided that includes a bulk semiconductor substrate of a first semiconductor material. The structure further includes a plurality of fin pedestal structures of a second semiconductor material located on the bulk semiconductor substrate of the first semiconductor material, wherein the second semiconductor material is different from the first semiconductor material. In accordance with the present application, each fin pedestal structure includes a pair of spaced apart semiconductor fins of the second semiconductor material.
Type:
Grant
Filed:
December 21, 2018
Date of Patent:
August 4, 2020
Assignee:
International Business Machines Corporation
Inventors:
Veeraraghavan S. Basker, Oleg Gluschenkov, Shogo Mochizuki, Alexander Reznicek