Abstract: Individual hydrogen atoms are desorbed from a hydrogen terminated layer on a silicon substrate, using an STM tip, to form a pattern of exposed regions. A single donor-bearing molecule (such as phosphorous atoms). The spins of the donor atoms may be used as qubits in a slid quantum computer.
Type:
Grant
Filed:
August 24, 2001
Date of Patent:
June 13, 2006
Assignee:
Qucor Pty Ltd
Inventors:
Robert Graham Clark, Andrew Steven Dzurak, Steven Richard Schofield, Michelle Yvonne Simmons, Jeremy Lloyd O'Brien
Abstract: There is described an organic thin-film transistor including an active layer made of organic semiconductor and a manufacturing method for the organic thin-film transistor. In particular, the invention concerns an organic thin-film transistor capable of being formed on a flexible base board made of a polymer material and a manufacturing method for the same. The organic semiconductor device, includes a drain electrode; a source electrode; a gate electrode; a channel that is made of an organic semiconductor material and is disposed between the drain electrode and the source electrode; and an insulation film that is disposed between the gate electrode and the channel; wherein the insulation film is formed under an atmospheric pressure environment by employing a plasma processing.
Abstract: A chemical vapor deposition (CVD) method for forming a microelectronic layer within a microelectronic product employs a wetting material treatment of a substrate upon which is formed the microelectronic layer. The wetting material treatment provides for an attenuated incubation or induction time when forming the microelectronic layer, particularly within the context of a digital CVD method, such as an atomic layer CVD method. The microelectronic layer is thus formed with enhanced manufacturability.