Patents Examined by William Brench
  • Method of making defect free silicon islands using SEG
    Patent number: 4758531
    Abstract: A method for forming epitaxial grown silicon structure having substantially defect free outer surfaces and resulting structure is provided. A silicon substrate is provided, on which an epitaxial silicon crystal is grown. The outer surface layer of the silicon epitaxially grown silicon crystal will contain defective material which is removed by oxidation of the outer layer to silicon dioxide. This removes the defect containing outer layer, creating a new outer layer which is substantially defect free.
    Type: Grant
    Filed: October 23, 1987
    Date of Patent: July 19, 1988
    Assignee: International Business Machines Corporation
    Inventors: Klaus D. Beyer, Louis L. Hsu, Dominic J. Schepis, Victor J. Silvestri