Abstract: This invention discloses a memory cell that has a first polysilicon, which functions as a gate. The memory cell further includes a first TEOS oxide layer overlying the first polysilicon and a plurality of via-1 openings exposing the first polysilicon therein. The memory cell further includes a patterned second polysilicon layer overlying the first TEOS oxide layer and filling the via-1 openings thus contacting the gate wherein the patterned second polysilicon containing dopant ions for functioning as a connector for the memory cell. The memory cell further includes a second TEOS oxide layer overlying the connector includes a plurality of via-2 openings for exposing the connector therein. The memory cell further includes a silicide barrier layer disposed in the via-2 openings.

Abstract: To obtain a semiconductor device which prevents an increase in the resistance of a source/drain region; which operates fast and stably; and which provides a high manufacturing yield, and to obtain a method of manufacturing the semiconductor device. A recess 8 is formed on a first low impurity-concentration region 5 with the exception of the area immediately below side wall insulating material 6y, and a layer damaged as a result of formation of the side wall insulating material 6y is removed. Further, a second low impurity-concentration region 10 is formed below the recess 8.

Abstract: A memory cell for a memory array in a folded bit line configuration. The memory cell includes an access transistor formed in a pillar of single crystal semiconductor material. The access transistor has first and second source/drain regions and a body region that are vertically aligned. A body contact is coupled to the body region of the access transistor that provides a body bias to the access transistor. The access transistor further includes a gate coupled to a word line disposed adjacent to the body region. A passing word line is separated from the gate by an insulator for coupling to other memory cells adjacent to the memory cell. A trench capacitor is also included. The trench capacitor includes a first plate that is formed integral with the first source/drain region of the access transistor and a second plate that is disposed adjacent to the first plate and separated from the first plate by a gate oxide.

Abstract: An object of this invention is to provide a semiconductor device having a monitor pattern which can more strictly ensure the precise finish dimension of a semiconductor integrated circuit device.

Abstract: A single-electron controlling magnetoresistance element which comprises, a couple of first ferromagnetic bodies each magnetized in a first direction, a second ferromagnetic body magnetized in a second direction in an initial direction and sandwiched between the couple of first ferromagnetic bodies with a tunnel junction interposed therebetween respectively, and means for directing the magnetization direction of the second ferromagnetic body to a direction different from the second direction, wherein a charging energy E.sub.c of a single electron in at least one of the tunnel junctions interposed between the first ferromagnetic body and the second ferromagnetic body meets the following conditions:E.sub.c >>k.sub.B T (2)E.sub.c >>h/R.sub.t C (3)wherein k.sub.B T is a thermal energy at an operation temperature, h is a Planck's constant, R.sub.t is a junction tunnel resistance, and C is a junction capacity.

Abstract: In a MOSFET or other high voltage device, an annular channel stopper (4) extends around the outer periphery (14) of a body portion (11) with which a device region (15) forms a p-n junction (5) operable under high reverse bias in at least one mode of operation of the device. A field plate structure (34, 34a, 34b, 34c) on an insulating layer (24) over the body portion (11) extends towards the outer periphery (14) to spread a depletion layer from the reverse-biased p-n junction (5) towards the outer periphery (14). The channel stopper (4) comprises concentrically doped stopper regions (41 to 44) with different doping concentrations and/or region widths and/or spacings, giving to the body portion (11) a non-uniform doping profile the doping of which, under the field plate structure (34, 34a, 34b, 34c), increases with distance (D) towards the outer periphery (14) to slow progressively the spread of the depletion layer under the field plate structure (34, 34a, 34b, 34c).

Abstract: A system for generating a document in response to a request for information has the capability of receiving scanned documents that have a series of questions. The present invention has databases of questions and associated answers. A respondent prepares the subject questions for a searching procedure by editing and assigning each question with a number and labels the same with given input parameters. The system searches the question database for a question which exactly matches the subject question or is a like match in that it is similar in text or input parameter value. The system compares each received question with stored questions and return similarly worded questions in accordance with a predetermined match threshold. The respondent may then select an answer associated with the subject question for inclusion in the response document. The present system is also characterized by a maintenance apparatus that allows for systematic upkeep of question and answer databases.