Patents Examined by William Wright, Sr.
  • Patent number: 6750172
    Abstract: A method of forming a catalyst body by forming a first layer of hemispherical grain polysilicon over a substrate, and oxidizing at least a portion of the first layer to form a second layer of silica. Additionally, forming a third layer of nitride material over the second layer, and forming a catalyst material over the nitride layer, can be performed before annealing to form a catalyst body.
    Type: Grant
    Filed: March 14, 2001
    Date of Patent: June 15, 2004
    Assignee: Micron Technology, Inc.
    Inventors: Yongjun Jeff Hu, Er-Xuan Ping