Patents Examined by Xinning (Tom) Niu
  • Patent number: 10447010
    Abstract: Provided herein are a method and apparatus for controlling the wavelength of an external-cavity wavelength-tunable laser. The reflectivity or transmittance characteristics of a wavelength depend on the phase difference between light reflected by a wavelength-tunable filter and parasitic reflective light. Thus, when the temperature of a module and current applied to a phase control electrode and an external reflector are changed, the characteristics are changed in a periodic manner. The present disclosure relates to a wavelength control algorithm of determining combinations of these parameters to set conditions having optimum chirping characteristics at a desired wavelength.
    Type: Grant
    Filed: August 5, 2016
    Date of Patent: October 15, 2019
    Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventor: Byung-Seok Choi
  • Patent number: 10439358
    Abstract: A method of manufacturing a light-emitting device includes providing a base body including a base section; fixing a plurality of semiconductor laser elements on an upper surface of the base section; and fixing an optical member to the base body, the optical member including a plurality of lens sections, and a non-lens section disposed at a periphery of the plurality of lens sections in a top view. In the step of fixing the optical member: the optical member is arranged above the base body; (i) an inclination and a height of the optical member are adjusted after interposing an adhesive between the base body and the non-lens section, or (ii) an adhesive is interposed between the base body and the non-lens section after adjusting the inclination and the height of the optical member; and subsequently, the adhesive is cured to fix the optical member to the base body.
    Type: Grant
    Filed: April 25, 2017
    Date of Patent: October 8, 2019
    Assignee: NICHIA CORPORATION
    Inventors: Soichiro Miura, Seiji Kiyota, Eiichiro Okahisa
  • Patent number: 10431953
    Abstract: A laser apparatus includes a plurality of laser modules, and includes a function for preventing a defect arising when switching the number of laser modules to be driven. The laser apparatus includes the plurality of laser modules, a combiner configured to combine laser beams from the plurality of laser modules, an optical output command section configured to generate a first optical output command for a combined laser beam, and a laser module selection/command section configured to select a laser module to be driven from the plurality of laser modules, based on the first optical output command and to generate a second optical output command for each of the laser modules that have been selected. The laser module selection/command section is configured to set a threshold value for a first optical output command to be different between when increasing and reducing the number of laser modules to be driven.
    Type: Grant
    Filed: March 27, 2018
    Date of Patent: October 1, 2019
    Assignee: FANUC CORPORATION
    Inventors: Ryuusuke Miyata, Hiroshi Takigawa
  • Patent number: 10424898
    Abstract: A semiconductor laser diode includes a layer sequence including a plurality of layers arranged one above another in a growth direction, wherein the semiconductor laser diode includes a first facet and a second facet between which a resonator extending in a longitudinal direction is formed, the layer sequence includes an active layer in which an active region is formed, the layer sequence includes waveguide layers, and the layer sequence includes a stressed layer arranged above the active layer in the growth direction, the stressed layer being provided for influencing a refractive index profile in the waveguide layers at least to partly compensate for an inhomogeneous variation of a refractive index in the waveguide layers, the inhomogeneous variation being brought about by an inhomogeneous temperature distribution during operation of the semiconductor laser diode.
    Type: Grant
    Filed: November 8, 2016
    Date of Patent: September 24, 2019
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Alexander Bachmann, Christian Lauer, Michael Furitsch
  • Patent number: 10424896
    Abstract: It is an object of the present invention to provide a laser light source module capable of diverting current flowing to a laser diode when the laser diode does not emit light. A laser light source module includes a laser diode, a bypass circuit parallelly connected to the laser diode and diverting current flowing to a laser diode in an on state, a light detection circuit detecting laser light of the laser diode, and the bypass circuit switching circuit switching the bypass circuit to the on state in accordance with a control signal being input thereto, and the bypass circuit switching circuit can switch the bypass circuit to the on state in accordance with a state where the light detection circuit does not detect the laser light.
    Type: Grant
    Filed: March 29, 2016
    Date of Patent: September 24, 2019
    Assignee: Mitsubishi Electric Corporation
    Inventor: Koji Hasegawa
  • Patent number: 10424731
    Abstract: According to one embodiment, a memory device includes a first electrode; a variable resistance layer provided on the first electrode, the variable resistance layer including a chalcogenide compound having a crystal structure; and a second electrode provided on the variable resistance layer. The variable resistance layer includes a first region covering one of an upper surface of the first electrode or a lower surface of the second electrode, and a second region, a concentration of the chemical element being lower in the second region than in the first region.
    Type: Grant
    Filed: July 24, 2015
    Date of Patent: September 24, 2019
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Kunifumi Suzuki, Kazuhiko Yamamoto
  • Patent number: 10411431
    Abstract: Laser systems are provided with a semiconductor laser having an emission face, a drive circuit adapted to supply electric energy to the semiconductor laser to cause the semiconductor laser to emit a beam; a user input system adapted to sense a user input action; a controller adapted to control the drive circuit based upon the sensed user input action; a housing within which the laser is positioned and having an opening with a window through which the semiconductor laser can emit the beam. The semiconductor laser is positioned to emit the beam through the window and the emission face of the semiconductor laser is sized to cause a divergence in the beam to create a patterned emission with a predetermined shape without passing the beam through beam shaping optics.
    Type: Grant
    Filed: November 10, 2016
    Date of Patent: September 10, 2019
    Assignee: LMD Power of Light Corporation
    Inventors: Susan Houde-Walter, Brian L. Olmsted, Jeffrey W. Mock, John A. Kowalczyk, Jr., Jeffrey D. Tuller
  • Patent number: 10404032
    Abstract: An optical power monitoring device detects an optical power propagating through an optical fiber including at least a core and a cladding. The optical power monitoring device includes: a first optical fiber; a second optical fiber having a larger core diameter than the first optical fiber; a connection part where an end surface of the first optical fiber and an end surface of the second optical fiber are spliced; a first leakage part for leakage of a beam from the first optical fiber to the outside; a second leakage part for leakage of a beam from the second optical fiber to the outside; a first photodetector that detects an optical power leaking from the first leakage part; and a second photodetector that detects an optical power leaking from the second leakage part.
    Type: Grant
    Filed: April 11, 2018
    Date of Patent: September 3, 2019
    Assignee: FANUC CORPORATION
    Inventors: Hisatada Machida, Hiroshi Takigawa
  • Patent number: 10396528
    Abstract: Provided is a laser device according to an embodiment of the inventive concept. The laser device includes: a semiconductor substrate; a germanium single crystal layer on the semiconductor substrate; and a pumping light source disposed on the germanium single crystal layer and configured to emit light toward the germanium single crystal layer, wherein the germanium single crystal layer receives the light to thereby output laser.
    Type: Grant
    Filed: July 9, 2018
    Date of Patent: August 27, 2019
    Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: In Gyoo Kim, Gyungock Kim, Sang Hoon Kim
  • Patent number: 10386178
    Abstract: The present invention relates to a laser device (10) for projecting a structured light pattern (9) onto a scene (15). The device is formed of several arrays (1) of semiconductor lasers (2), each array (1) comprising an irregular distribution of emission areas (2a) of the semiconductor lasers (2). One or several imaging optics (4) image said arrays (1) to an imaging space and superpose the images of said arrays (1) in the imaging space to form said light pattern (9). The proposed laser device generates a light pattern with high contrast and efficiency which may be used for 3D imaging systems, e. g. in automotive applications.
    Type: Grant
    Filed: November 22, 2013
    Date of Patent: August 20, 2019
    Assignee: PHILIPS PHOTONICS GMBH
    Inventors: Holger Moench, Stephan Gronenborn, Mark Carpaij
  • Patent number: 10389081
    Abstract: The present invention relates to a system for modulating laser pulses by means of an electro-optical modulator which is operated by means of a pulsed modulation voltage. A voltage converter mounted upstream of the modulator converts a pulsed modulated switching voltage at an output voltage level to the modulation voltage that is higher than the output voltage level. The invention further relates to a method for modulating laser pulses.
    Type: Grant
    Filed: August 17, 2015
    Date of Patent: August 20, 2019
    Assignees: AMPHOS GMBH, AMOTRONICS UG
    Inventors: Jan Dolkemeyer, Claus Schnitzler, Torsten Mans, Stefan Verse, Martin Hessing, Jürgen Martini
  • Patent number: 10389082
    Abstract: The invention relates to rare-earth-doped ternary sulfides. The rare-earth-doped ternary sulfides may be used as an active material for mid-wave infrared and long-wave infrared lasers and amplifiers. Methods for producing laser materials including rare-earth-doped ternary sulfides, as well as lasers and amplifiers incorporating the laser materials, are also provided.
    Type: Grant
    Filed: April 10, 2018
    Date of Patent: August 20, 2019
    Assignee: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: L. Brandon Shaw, Michael P. Hunt, Woohong Kim, Shyam S. Bayya, Steven R. Bowman, Frederic H. Kung, Jasbinder S. Sanghera, Christopher G. Brown
  • Patent number: 10381804
    Abstract: A vertical-cavity light-emitting element includes: a first reflector; a semiconductor structure layer including a first semiconductor layer, an active layer, a second semiconductor layer, and a third semiconductor layer that are sequentially provided on the first reflector; a transparent electrode on the third semiconductor layer; and a second reflector on the transparent electrode and interposes the structure layer with the first reflector. The third semiconductor layer has a mesa structure to protrude on the second semiconductor layer and be covered by the transparent electrode. The light emitting element further includes a current confining layer including: an insulating film provided in the second semiconductor layer to surround the mesa structure and be in contact with the transparent electrode, the insulating film being an oxide of the second semiconductor layer; and an insulating layer on the insulating film to surround the mesa structure and define a through opening.
    Type: Grant
    Filed: February 1, 2018
    Date of Patent: August 13, 2019
    Assignee: STANLEY ELECTRIC CO., LTD.
    Inventors: Komei Tazawa, Ji-Hao Liang, Seiichiro Kobayashi
  • Patent number: 10374385
    Abstract: Hybrid silicon lasers and amplifiers having resonator cavities within a silicon substrate and a two-dimensional material film on the substrate as an optical gain medium are described. The two-dimensional material film may be formed of one or more atomic layers of phosphorene (BP). The number of phosphorene layers may be adjusted to tune the emission wavelength of the hybrid devices.
    Type: Grant
    Filed: September 15, 2017
    Date of Patent: August 6, 2019
    Assignees: UCHICAGO ARGONNE, LLC, NORTHWESTERN UNIVERSITY
    Inventors: Chad Husko, Jeff Guest, Mark Hersam, Joohoon Kang, Joshua Wood, Xavier Checoury
  • Patent number: 10374383
    Abstract: To provide a laser ignition device in which the ignition efficiency is improved and the laser pulse energy necessary for ignition is minimized by optimizing the pulse time width of laser. The laser ignition device includes: a pulse laser oscillator 1 configured to output a beam having a wavelength ? [?m] and a beam quality M2; an energy controller 2 configured to control energy of pulse laser outputted from the pulse laser oscillator 1; a lens 3 having a focal length f [mm] and configured to focus the pulse laser outputted from the pulse laser oscillator 1; and a pulse time width controller 14 configured to control a time width of the pulse laser, wherein the pulse time width controller 14 controls the time width of the pulse laser to be 0.6 to 2 ns.
    Type: Grant
    Filed: April 13, 2018
    Date of Patent: August 6, 2019
    Assignee: INTER-UNIVERSITY RESEARCH INSTITUTE CORPORATION NATIONAL INSTITUTES OF NATURAL SCIENCES
    Inventors: Takunori Taira, Hwan Hong Lim
  • Patent number: 10367328
    Abstract: A laser device with a ring laser resonator includes a polarization maintaining (PM) fiber, a first quarter waveplate, and an optical isolator. The PM fiber has a light input end and a light output end and is configured to guide a first linearly polarized light with a first phase along a fast axis of the PM fiber from the light input end and a second linearly polarized light with a second phase along a slow axis of the PM fiber from the input end. The first quarter waveplate is disposed at the light output end of the PM fiber and configured to convert the first and the second linearly polarized lights into left-handed and right-handed (or right-handed and left-handed) circularly polarized lights, respectively. The optical isolator is configured to unidirectionally transmit a laser pulse in the ring laser resonator.
    Type: Grant
    Filed: July 6, 2017
    Date of Patent: July 30, 2019
    Assignee: Industrial Technology Research Institute
    Inventor: Jin-Long Peng
  • Patent number: 10361534
    Abstract: A semiconductor light source is disclosed. In an embodiment a semiconductor light source includes at least one semiconductor laser configured to generate a primary radiation and at least one coupling-out element comprising a continuous base region and rigid light guide columns extending away from the base region, the light guide columns acting as waveguides for the primary radiation, wherein the primary radiation is irradiated into the base region during operation, is led through the base region to the light guide columns and is directionally emitted from the light guide columns so that an intensity half-value angle of the emitted primary radiation is at most 90°.
    Type: Grant
    Filed: February 23, 2017
    Date of Patent: July 23, 2019
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Bernhard Stojetz, Alfred Lell, Christoph Eichler, Andreas Löffler
  • Patent number: 10361270
    Abstract: A nanowire field effect transistor (FET) device and method for forming a nanowire FET device are provided. A nanowire FET including a source region and a drain region is formed. The nanowire FET further includes a nanowire that connects the source region and the drain region. A source silicide is formed on the source region, and a drain silicide is formed on the drain region. The source silicide is comprised of a first material that is different from a second material comprising the drain silicide.
    Type: Grant
    Filed: November 20, 2013
    Date of Patent: July 23, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Jean-Pierre Colinge, Cheng-Tung Lin, Kuo-Cheng Ching, Carlos H. Diaz
  • Patent number: 10348053
    Abstract: A tunable laser has a solid state laser medium having an optical gain region and generates coherent radiation through a facet. A lens collects the coherent radiation and generates a collimated light beam. Components of an external cavity include a reflective surface and an optical filter, the reflective surface reflecting the collimated beam back to the lens and the laser medium, the optical filter positioned between the reflective surface and the lens and having two surfaces with a thermally tunable optical transmission band within the optical gain region of the laser medium. The optical filter (1) transmits a predominant portion of the collimated beam at a desired wavelength of operation, and (2) specularly reflects a remaining portion of the collimated beam from each surface, the collimated beam being incident on the optical filter such that the reflected collimated beams propagate at a non-zero angle with respect to the incident collimated beam.
    Type: Grant
    Filed: July 12, 2017
    Date of Patent: July 9, 2019
    Assignee: Redshift Bioanalytics, Inc.
    Inventors: Eugene Yi-Shan Ma, Charles M. Marshall
  • Patent number: 10340656
    Abstract: A semiconductor laser source includes a structured layer formed on a substrate made of silicon and having an upper face. The structured layer includes a passive optical component chosen from the group composed of an optical reflector and a waveguide. The component is encapsulated in silica or produced on a silica layer. At least one pad extends from a lower face of the structured layer, making direct contact with the substrate made of silicon, to an upper face flush with the upper face of the structured layer. The pad is produced entirely from silicon nitride, in order to form a thermal bridge through the structured layer. An optical amplifier is bonded directly above the passive optical component and partially to the upper face of the pad in order to dissipate the heat that it generates to the substrate made of silicon.
    Type: Grant
    Filed: June 29, 2017
    Date of Patent: July 2, 2019
    Assignee: Commissariat A L'Energie Atomique et aux Energies Alternatives
    Inventors: Corrado Sciancalepore, Marco Casale