Abstract: Embodiments include apparatuses, methods, and systems including a laser device having a 1×3 MMI coupler within a semiconductor layer. A front arm is coupled to the MMI coupler and terminated by a front reflector. In addition, a coarse tuning arm is coupled to the MMI coupler and terminated by a first back reflector for coarse wavelength tuning, a fine tuning arm is coupled to the MMI coupler and terminated by a second back reflector for fine wavelength tuning, and a SMSR and power tuning arm is coupled to the MMI coupler and terminated by a third back reflector. A gain region is above the front arm and above the semiconductor layer. Other embodiments may also be described and claimed.

Abstract: An apparatus includes a base that includes a raised surface and a first opening through the raised surface. The apparatus also includes a cover configured to be coupled to the base in order to form a cavity, where the cover includes a second opening through the cover. The raised surface is configured to allow passage of a first portion of optical energy through the first opening and to reflect a second portion of the optical energy. Portions of the cover and the base surrounding the cavity are configured to absorb the reflected second portion of the optical energy. The base may further include one or more baffles positioned around the raised surface, and/or the cover may further include one or more baffles positioned around the second opening.

Abstract: A femtosecond laser multimodality molecular imaging system includes a near-infrared pulse generation device for providing near-infrared pulses with a central wavelength of 1010 nm to 1100 nm and a spectral width of less than 25 nm. The near-infrared pulses can excite an optical medium with strong nonlinearity to generate the femtosecond laser pulses with ultra-wide spectrum. A pulse measurement compression and control module measures and compensates the accumulated dispersion of the femtosecond laser pulses arriving at the tissue sample, so as to eliminate the “time domain broadening” effect as much as possible. The obtained shortest pulses can interact with the tissue sample to generate spectral signals from different modalities, thus providing a variety of nonlinear molecular image modalities.

Abstract: A semiconductor optical device is provided with a semiconductor substrate that has a length and width, a laser section that is provided on the semiconductor substrate and includes an active layer and an optical waveguide section that is provided adjacent to the laser section on the semiconductor substrate and is joined to the laser section. The optical waveguide section includes a core layer that is connected to an end portion of the active layer, and a pair of cladding layers between which the core layer is sandwiched and emits, from an emission end surface, light incident from the joining interface between the optical waveguide section and the laser section. The semiconductor optical device may be also provided with a reflection suppression layer that is provided on the upper surface of the optical waveguide section.

Abstract: A photon source may have a substrate, a focus lens disposed above the substrate, and a plurality of optical sources disposed on the substrate. Each optical source may have a mirror disposed on the substrate configured to reflect a collimated beam emitted by an optical emitter disposed on the substrate. The plurality of mirrors may be arranged in a first ring-like configuration defining a first diameter. The plurality of optical emitters may be arranged in a second ring-like configuration defining a second diameter which is larger than the first diameter. In some aspects each optical source may include a second optical emitter emitting a second optical beam and an optical combiner configured to combine the first emitted optical beam and the second emitted optical beam to form the collimated beam. In another aspect, the photon source may be composed of a vertical array of multiple substrates.

Abstract: Laser waveguides, methods and systems for forming a laser waveguide are provided. The waveguide includes an inner cladding layer surrounding a central axis and a glass core surrounding and located outside of the inner cladding layer. The glass core includes a laser-active material. The waveguide includes an outer cladding layer surrounding and located outside of the glass core. The inner cladding, outer cladding and/or core may surround a hollow central channel or bore and may be annular in shape.

Abstract: Structures for response shaping in frequency and time domain, include an optical response shaper and/or a modulator device with multiple injection. The device comprises a resonator having an enclosed geometric structure, for example a ring or racetrack structure, at least two injecting optical waveguides approaching the resonator to define at least two coupling regions between the resonator and the injecting waveguides, and may define at least two Free Spectral Range states. One or both of the coupling regions has a coupling coefficient selected for a predetermined frequency or time response, and the coupling coefficient or other device parameters may be variable, in some case in real time to render the response programmably variable.

Abstract: A multi-pass coaxial molecular gas laser is described in both symmetrical and asymmetrical configuration. An anode vessel receives lasing gas and the gas flows through one or more plasma channels to a cathode vessel which receives the gas and redirects it in the closed system. A second anode vessel may alternatively be provided to double length of the plasma channel and increase surface area exposure of the optical beam to the energized gas. Non-laminar gas flow may be created using spiral nozzles at the entrance of the optical resonator.

Abstract: A fabrication sequence for an oxide-confined VCSEL includes the deposition of a protective coating over exposed horizontal surfaces to prevent unwanted oxide layers from being formed during the lateral oxidation process used to create the oxide aperture. By preventing the oxidation of these surfaces in the first instance, the opportunity for moisture to gain access to the active region of the VCSEL is eliminated. For example, exposed Al-containing surfaces are covered with a protective coating of dielectric material prior to initiating the conventional lateral oxidation process used to form the oxide aperture of the VCSEL. With the protective coating in place, a conventional fabrication process is resumed, and the protective coating ultimately forms part of the passivation layer used to provide electrical isolation for the final VCSEL device.

Abstract: A laser oscillator capable of detecting scattered light intensity when a laser beam is incident on an end surface of a fiber more appropriately is provided. A laser oscillator monitoring control system includes: a scattered light detection unit that detects a scattered light intensity on an input end surface of a process fiber of a fiber laser oscillator; a control unit that controls a laser output value on the basis of a laser output command value from a CNC and a detection result obtained by the scattered light detection unit; a normal scattered light calculation unit that calculates a normal index value; a first threshold setting unit that sets a first threshold indicating an abnormality resulting from a contamination and/or a scratch; a second threshold setting unit that sets a second threshold indicating an abnormality resulting from an optical axis shift; and a third threshold setting unit that sets a third threshold indicating an abnormality of a level in which a component is destroyed.

Abstract: A multi-section laser device is configured with a gain section and an integrated photodetector section. The photodetector section, rather than being a separate component, is integrated directly into the body of the laser. The integrated photodetector section absorbs photons generated by the gain section and creates a photocurrent that is proportional to the output of the multi-section laser device. The measured photocurrent is usable to calculate power output of the multi-section laser device and to identify any adjustments that may be needed to be made to the laser in order to achieve desired laser light output.

Abstract: Disclosed are embodiments of bidirectionally emitting semiconductor (BEST) laser architectures including higher order mode suppression structures. The higher order mode suppression structures are centrally located and extend from an inner transition boundary, which may be established by confronting high reflector (HR) facets in some embodiments or a central plane defining two sides of a unitary, bidirectional optical cavity in other embodiments. Examples of the higher order mode suppression structures include narrow regions of bidirectional flared laser oscillator waveguide (FLOW) devices, which are also referred to as reduced mode diode (REM) devices; high-index regions of bidirectional higher-order mode suppressed laser (HOMSL) devices; and non- or less-etched gain-guided lateral waveguides of bidirectional low divergence semiconductor laser (LODSL) devices.

Abstract: Embodiments of the invention relate to a plasmonic laser including a substrate and a coaxial plasmonic cavity formed on the substrate and adapted to facilitate a plasmonic mode. The plasmonic laser further includes an electrical pumping circuit configured to electrically pump the plasmonic laser. The coaxial plasmonic cavity includes a peripheral plasmonic ring structure, a central plasmonic core and a gain structure arranged between the peripheral plasmonic ring structure and the central plasmonic core. The gain structure includes one or more ring-shaped quantum wells as gain material. The one or more ring-shaped quantum wells have a surface that is aligned orthogonal to a surface of the substrate. The electrical pumping circuit is configured to pump the plasmonic laser via the peripheral plasmonic ring structure and the central plasmonic core.

Abstract: This disclosure relates to semiconductor quantum cascade lasers (QCLs). A three-terminal QCL device is disclosed. The three-terminal QCL device includes a unipolar multi-period quantum cascade laser structure embedded in a bipolar structure having three terminals providing at least two independently controllable biases to the QCL device for adjusting the lasing intensity and for tuning the lasing wavelength of the QCL device. The three-terminal QCL device further includes a quantum impedance matching structure for achieving high efficiency carrier injection and lowering lasing threshold. In addition, the multi-period quantum cascade laser structure is selectively doped to provide near charge neutrality during operation. The three-terminal QCL may further be controlled to achieve simultaneous dual- or multi-color lasing.

Abstract: The present embodiment relates to a light emitting device having a structure capable of removing zero order light from output light of an S-iPM laser. The light emitting device includes a semiconductor light emitting element and a light shielding member. The semiconductor light emitting element includes an active layer, a pair of cladding layers, and a phase modulation layer. The phase modulation layer has a basic layer and a plurality of modified refractive index regions, each of which is individually disposed at a specific position. The light shielding member has a function of passing through a specific optical image output along an inclined direction and shielding zero order light output along a normal direction of a light emitting surface.

Abstract: The present embodiment relates to a light emitting device having a structure capable of removing zero order light from output light of an S-iPM laser. The light emitting device includes a semiconductor light emitting element and a light shielding member. The semiconductor light emitting element includes an active layer, a pair of cladding layers, and a phase modulation layer. The phase modulation layer has a basic layer and a plurality of modified refractive index regions, each of which is individually disposed at a specific position. The light shielding member has a function of passing through a specific optical image output along an inclined direction and shielding zero order light output along a normal direction of a light emitting surface.

Abstract: A semiconductor laser module includes a semiconductor laser device that outputs laser light; an optical fiber that includes a core portion and a cladding portion formed at an outer periphery of the core portion and that receives the laser light from one end and guides the laser light to the outside of the semiconductor laser module; an optical part disposed at an outer periphery of the optical fiber, having optical transmittance at a wavelength of the laser light, and that fixes the optical fiber; a first fixative that fixes the optical part and the optical fiber; and a housing that accommodates the semiconductor laser device and the one end of the optical fiber that receives the laser light, wherein an optical reflection reducing region treated to absorb the laser light and having a rough surface is formed around the optical part.

Abstract: A laser diode device includes: a first heat sink including a first mounting layer, in which the first mounting layer includes at least two mounting pads electrically isolated from one another; a second heat sink including a second mounting layer, in which the second mounting layer includes at least two mounting pads electrically isolated from one another; and a laser diode bar between the first heat sink and the second heat sink, in which a bottom electrical contact of the laser diode bar is mounted to the first mounting layer, and a top electrical contact of the laser diode bar is mounted to the second mounting layer.

Abstract: A tunable laser device is described. In one example, the tunable laser device includes an adaptive ring mirror, a gain waveguide, a loop mirror waveguide, and a booster amplifier waveguide. The gain waveguide and the boost amplifier waveguide can be formed in a semiconductor optical amplifier (SOA) region of the tunable laser device, and the adaptive ring mirror and the loop mirror waveguide can be formed in a silicon photonics region of the tunable laser device. The adaptive ring mirror includes a phase shifter optically coupled between a number of MMI couplers. By inducing a phase shift using the phase shifter, the wavelength of the output of the tunable laser device can be altered or adjusted for use in coherent fiber-optic communications, for example, among other applications.

Abstract: A high-power fiber laser produces a compound output beam having a center beam and an annular beam. The center beam and the annular beam are independently adjustable in power and wavelength. The output beam is delivered from an output optical fiber having a center core and a concentric annular core. A fundamental beam generated by a seed laser is amplified by a fiber amplifier and partially converted to a second-harmonic beam by a second-harmonic generator. The residual fundamental beam and second-harmonic beam are separated, attenuated, and selectively coupled into the cores of the output optical fiber.