Abstract: An optical nose for detecting the presence of molecular contaminants in gaseous samples utilizes a tunable seed laser output in conjunction with a pulsed reference laser output to generate a mid-range IR laser output in the 2 to 20 micrometer range for use as a discriminating light source in a photo-acoustic gas analyzer.

Abstract: An optical scanning apparatus includes a light source configured to emit a plurality of laser beams from a plurality of light emitting parts, a beam shaping unit configured to shape the laser beams emitted from the light source, a detection unit provided outside the light source and configured to detect an amount of a laser beam that is not shaped by the beam shaping unit in the laser beams emitted from the light source in an area outside the beam shaping unit, and a light amount control unit configured to control amounts of the laser beams emitted from the light source based on a detection result detected by the detection unit. The detection unit includes a plurality of light-sensitive elements. The light amount control unit controls the light amounts of the laser beams emitted from the light source based on detection results of the light-sensitive elements.

Abstract: OFDM (Orthogonal Frequency Division Multiplexing) has been proposed for processing signals over WDM channels in an optical network. The number of OFDM sub-carrier channels utilized in transmitting optical signals from a transmitting node to a remote is adapted to the quality of transmission in a WDM channel. Responsive to control signals from the remote node, the number of used sub-carrier channels is set to optimize optical performance of the WDM channel.

Abstract: The present invention is directed to the integration of a quantum cascade laser with a hollow waveguide on a chip to improve both the beam pattern and manufacturability. By coupling the QCL output into a single-mode rectangular waveguide the radiation mode structure can be known and the propagation, manipulation, and broadcast of the QCL radiation can then be entirely controlled by well-established rectangular waveguide techniques. By controlling the impedance of the interface, enhanced functions, such as creating amplifiers, efficient coupling to external cavities, and increasing power output from metal-metal THz QCLs, are also enabled.

Abstract: An optical device for improving conduction and reflectivity and minimizing absorption. The optical device includes a first mirror comprising a first plurality of mirror periods designed to reflect an optical field at a predetermined wavelength, where the optical field has peaks and nulls. Each of the plurality of mirror periods includes a first layer of having a high carrier mobility, a second layer having lower carrier mobility, and a first compositional ramp between the first and second layers. The thicknesses of the first and second layers for at least a portion of the first plurality of mirror periods are established such that the nulls of the optical field occur within the first layer and not within the compositional ramp. At least the portion of the first layers within the first plurality of mirror periods include elevated doping concentrations at locations of the nulls of the optical field.

Abstract: A broadband light source configured to emit a stable broadband optical beam is provided. The broadband light source includes at least one optical pump source, an optical system including a polarization beam combiner, and a solid state laser medium. The optical system is configured to receive at least one optical pump beam from a respective one of the at least one optical pump source. The solid state laser medium receives a substantially unpolarized pump beam from a first output of the optical system. Stable broadband amplified spontaneous emission is output from a second output of the optical system.

Abstract: In a mirror including a substrate and a dielectric multilayer coating structure formed on the substrate, the multilayer coating structure includes two mirror-function layer portions, each formed by a plurality of layers deposited one on another, and a cavity layer that is arranged between the two mirror-function layer portions, and which causes light having a predetermined wavelength to resonate between the two mirror-function layer portions. Further, a dispersion value with respect to the light having the predetermined wavelength is in the range of ?600 fs2 to ?3000 fs2 and a reflectance with respect to the light having the predetermined wavelength is in the range of 97% to 99.5%.

Abstract: A nitride semiconductor laser device includes a multilayer structure including a plurality of nitride semiconductor layers including a light emitting layer, the multilayer structure having cavity facets facing each other, and a plurality of protective films made of a dielectric material provided on one of the cavity facets. The protective films include a first protective film, a second protective film and a third protective film. The first protective film contacts the cavity facet and is made of aluminum nitride. The second protective film is provided on a surface opposite to the cavity facet of the first protective film and is made of a material different from that of the first protective film. The third protective film is provided on a surface opposite to the first protective film of the second protective film and is made of the same material as that of the first protective film.

Abstract: A monolithically integrated laser diode chip having a construction as a multiple beam laser diode, which, on a semiconductor substrate (3) comprised of GaAs, has at least two laser stacks (4a, 4b, 4c) which are arranged one above another and which each contain an active zone (7). The active zone (7) is in each case arranged between waveguide layers (8). The waveguide layers (8) each adjoin a cladding layer (6) at a side remote from the active zone. At least one of the waveguide layers (8) or cladding layers (6) of at least one laser stack (4a, 4b, 4c), comprises AlxGa1-xAs, where 0?x?1, and at least one additional material from main group III or V, such that the lattice mismatch between the at least one waveguide layer (8) or cladding layer (6) comprising the at least one additional element and the semiconductor substrate (3) composed of GaAs is reduced. This increases the lifetime of the laser diode chip.

Abstract: A semiconductor laser is embodied as a surface emitting thin-film semiconductor laser (2) with a semiconductor body (4). The semiconductor body (4) comprises a first and a second planar surface (12, 14). The semiconductor body (4) comprises between the planar surfaces at least one active layer (10) for generating radiation. The semiconductor body (4) has, for coupling out the radiation from the active layer (10) toward the first planar surface (12), at least one first mirror area (26) inclined with respect to the active layer (10).

Abstract: Apparatus and method for driving laser diodes with electrical power in pulsed operation. Pulsed power, for example using pulse-width modulation, is applied through an inductor in one or more parallel regulator circuits having little or no output capacitance to provide a high-efficiency laser-diode-driver power supply. Some embodiments that use two or more parallel regulator circuits in the laser-diode driver, drive each from a different phase of a clock signal. Some embodiments provide a first DC-to-DC converter has a relatively high-voltage input (e.g., about 275 volts, 0.75 amps) and an intermediate output of, e.g., 11 to 15 volts, 15 to 11 amps used to charge a storage capacitor, and a second DC-to-DC converter diode driver having one or more parallel circuits (each having, e.g., a PWM switching-mode controller and its respective switch, inductor, and diode) to turn on, regulate, and turn off a constant laser-diode current through one or more laser diodes.

Abstract: A planar waveguide laser device forms a waveguide by a plate-like laser medium having birefringence and clad attached to at least one of the surfaces of the laser medium perpendicular to its thickness direction, amplifies laser light by a gain produced by excitation light incident on the laser medium, and performs laser oscillation. The laser medium is formed of a material having an optic axis on a cross section perpendicular to the light axis, which is the laser travelling direction. The clad is formed of a material having a refractive index in a range between refractive indexes of two polarized lights that travel along the light axis in the laser medium and have oscillation surfaces that are orthogonal to each other. The planar waveguide laser device readily oscillates linearly polarized laser light.

Abstract: According to an aspect of an embodiment, a DQPSK optical receiver, comprising: a first LPF connected to a line branching off from between a first optical-electrical converter and a first data recovery circuit; a second LPF connected to a line branching off from between a second optical-electrical converter and a second data recovery circuit; a first LIA for amplifying a signal output from the first LPF and also limiting an amplitude of an output signal thereof; a second LIA for amplifying a signal output from the second LPF and also limiting an amplitude of an output signal thereof; a first mixer for multiplying the output signal from the first LIA by a signal output from the second LPF; and a second mixer for multiplying the output signal from the second LIA by a signal output from the first LPF.

Abstract: Fiber lasers and methods for constructing and using fiber lasers for micro-/nano-machining with output beams including stacked pulses and combinations of continuous wave, pseudo-continuous wave and pulse sequence components.

Abstract: The invention relates to a two-stage laser system well fit for semiconductor aligners, which is reduced in terms of spatial coherence while taking advantage of the high stability, high output efficiency and fine line width of the MOPO mode. The two-stage laser system for aligners comprises an oscillation-stage laser (50) and an amplification-stage laser (60). Oscillation laser light having divergence is used as the oscillation-stage laser (50), and the amplification-stage laser (60) comprises a Fabry-Perot etalon resonator made up of an input side mirror (1) and an output side mirror (2). The resonator is configured as a stable resonator.

Abstract: A surface emitting laser includes first mirror, a second mirror, and an active layer formed between the first mirror and the second mirror. A third mirror is formed between the first mirror and the active layer. A first cavity is constituted by the first mirror and the second mirror, and a second cavity is constituted by the first mirror and the third mirror.

Abstract: A semiconductor laser device 1 includes infrared and red laser elements 3, 4 provided on a substrate 2, where the infrared element 3 includes a laminate of a first lower clad layer 11, a first active layer 12 and a first upper clad layer 13, and the red element 4 includes a laminate of a second lower clad layer 21, a second active layer 22 and a second upper clad layer 23. The clad layer 11 includes a third lower clad layer 17 formed on the substrate 2, an etching stop layer 18 formed on the third lower clad layer 17, and a fourth lower clad layer 19 formed on the etching stop layer 18 at a region provided with the infrared element 3. The second lower clad layer 21 is formed on the etching stop layer 18 except at the region of the infrared element 3.

Abstract: An optical device includes an optical fiber having a core including multicomponent phosphate glasses, and a cladding surrounding the core, and a first fiber Bragg grating formed in a first portion of the core of the optical fiber and having an index modulation amplitude greater than 2×10?5.

Abstract: Various embodiments described herein relate to a laser source for producing a pulsed laser beam comprising a plurality of ultrashort optical pulses having a variable repetition rate. In one embodiment, the laser source comprises a fiber oscillator, which outputs optical pulses and a pulse stretcher disposed to receive the optical pulses. The optical pulses have an optical pulse width. The pulse stretcher has dispersion that increases the optical pulse width yielding stretched optical pulses. The laser source further comprises a fiber amplifier disposed to receive the stretched optical pulses. The fiber optical amplifier has gain so as to amplify the stretched optical pulses. The laser source includes an automatically adjustable grating compressor having dispersion that reduces the optical pulse width. The grating compressor automatically adjusts this dispersion for different repetition rates.

Abstract: A grating pulse compressor configuration is introduced for increasing the optical dispersion for a given footprint and to make practical the application for chirped pulse amplification (CPA) to quasi-narrow bandwidth materials, such as Nd:YAG. The grating configurations often use cascaded pairs of gratings to increase angular dispersion an order of magnitude or more. Increased angular dispersion allows for decreased grating separation and a smaller compressor footprint.