Abstract: In the present disclosure, in a high-voltage side electrode component, the electrode main dielectric film is provided on the lower surface of the electrode conductive film, and the electrode additional dielectric film is disposed below the electrode main dielectric film at an upper main/additional inter-dielectric distance. The electrode main dielectric film includes the whole electrode conductive film in a plan view, and has a formation area larger than the electrode conductive film. The electrode additional dielectric film includes the electrode conductive film in a plan view and has a formation area slightly larger than the electrode conductive film and smaller than the electrode main dielectric film. The ground side electrode component has the same features as the above-mentioned features of the high-voltage side electrode component.

Abstract: The disclosure describes a plasma source assemblies comprising a differential screw assembly, an RF hot electrode, a top cover, an upper housing and a lower housing. The differential screw assembly is configured to provide force to align the plasma source assembly vertically matching planarity of a susceptor. More particularly, the differential screw assembly increases a distance between the top cover and the upper housing to align the gap with the susceptor. The disclosure also provides a better thermal management by cooling fins. A temperature capacity of the plasma source assemblies is extended by using titanium electrode. The disclosure provides a cladding material covering a portion of a first surface of RF hot electrode, a second surface of RF hot electrode, a bottom surface of RF hot electrode, a portion of a surface of the showerhead and a portion of lower housing surface.

Abstract: According to one embodiment, an etching apparatus includes a first container including an opening covered by a semiconductor substrate; a second container including an opening covered by a catalyst layer; a first flow path configured to communicate with the first container; a second flow path configured to communicate with the second container; a cation exchange film interposed between the first flow path and the second flow path and allowing at least protons to pass through; and an electric field applier configured to apply an electric field to the semiconductor substrate.

Abstract: The invention provides a method and system to remotely monitor a plasma (3) comprising a magnetic field antenna (2) positioned in the near electromagnetic field of a coupled plasma source wherein the magnetic field antenna is a magnetic loop antenna placed in the near electromagnetic field and measure near field signals emitted from the plasma source. A radio system (1) is utilised to analyse the low power signal levels across a wide frequency band. Plasma parameters such as series, or geometric, resonance plasma and electron-neutral collision frequencies are evaluated via a fitting of resonant features present on higher harmonics of the driving frequency to identify arcing, pump or matching failure events, common in fabrication plasma systems.

Abstract: The present disclosure relates to a field of dry etching technology. The present disclosure provides an ultra-large area scanning reactive ion etching machine and an etching method thereof. The ultra-large area scanning reactive ion etching machine includes: an injection chamber, an etching reaction chamber, a transition chamber, and an etching ion generation chamber. By moving a sample holder among the injection chamber, the etching reaction chamber and the transition chamber in a scanning direction, a scanning etching is performed on a sample placed on the sample holder, which may realize a large-area, uniform and efficient etching.

Abstract: Embodiments of the present disclosure provide a semiconductor processing apparatus and a dielectric window cleaning method of the semiconductor processing apparatus. The semiconductor apparatus includes a reaction chamber and a dielectric window arranged in the reaction chamber, an induction coil and a cleaning electrode, both located above the dielectric window, a radio frequency (RF) source assembly configured to apply RF power to the induction coil and the cleaning electrode, an impedance adjustment assembly electrically being connected to the cleaning electrode and being in an on-off connection to the output terminal of the RF source assembly. The semiconductor processing apparatus and the dielectric window cleaning method of the semiconductor processing apparatus of embodiments of the present disclosure can achieve a physical cleaning effect and a chemical cleaning effect at simultaneously on a basis of performing cleaning on the dielectric window.

Abstract: A substrate processing apparatus using plasma capable of efficiently controlling the selectivity ratio of a silicon layer and an oxide layer is provided. The substrate processing apparatus comprises a first space disposed between an electrode and an ion blocker; a second space disposed between the ion blocker and a shower head; a processing space under the shower head for processing a substrate; a first supply hole for providing a first gas for generating plasma to the first space; a second supply hole for providing a second gas to be mixed with an effluent of the plasma to the second space; and a first coating layer formed on a first surface of the shower head facing the second space, not formed on a second surface of the shower head facing the processing space, and containing nickel.

Abstract: A first and a second flange assembly configured for facilitating uniform and laminar flow in a system are provided. The first flange assembly includes a first flange body configured to introduce a gas into a chamber. The first flange assembly includes a plurality of outlet tubes disposed on an interior surface of the first flange body and a plurality of inlet tubes disposed on an exterior surface of the first flange body and in fluid communication with the plurality of outlet tubes. The second flange assembly includes a second flange body configured to remove the gas from the chamber. The second flange assembly includes a plurality of through holes extending from an interior surface to an exterior surface of the second flange body and a plurality of exit tubes extending from the exterior surface of the second flange body and in fluid communication with the plurality of through holes.

Abstract: In a plasma processing apparatus, a controller specifies a time point when a current starts to flow between an edge ring and a DC power supply after beginning an application of a negative DC voltage to the edge ring from the DC power supply. The controller specifies, from a voltage measurement value indicating a voltage of the edge ring at the time point, an estimate of a self-bias voltage of the edge ring generated by a supply of a radio frequency power. The controller sets a sum of an absolute value of the estimate of the self-bias voltage and a set value as an absolute value of the negative DC voltage to be applied to the edge ring by the DC power supply.

Abstract: A plasma processing apparatus includes a processing chamber configured to accommodate a substrate, a gas supply configured to supply a processing gas into the processing chamber, a power supply configured to supply power to the processing chamber to generate plasma such that the substrate is processed by using the generated plasma, and a control device configured to control the power supply. The control device controls the power supply to perform a process of supplying a first power including a frequency component within a first band having a first bandwidth to the processing chamber when the plasma is generated from the processing gas, and a process of supplying a second power including a frequency component within a second band having a second bandwidth smaller than or equal to the first bandwidth to the processing chamber when the substrate is processed by using the generated plasma.

Abstract: According to various aspects of the disclosure, a valve assembly for a vacuum chamber housing may have: a valve housing, which has a substrate transfer gap; a valve flap, which is mounted so as to be rotatable about an axis of rotation, thus enabling said flap to be rotated into a first position and into a second position, wherein the axis of rotation is arranged in the substrate transfer gap, and wherein the substrate transfer gap is extended longitudinally along the axis of rotation; wherein the valve flap closes the substrate transfer gap in the first position and is arranged adjacent to the substrate transfer gap in the second position.

Abstract: A substrate holder holds a substrate at a predetermined position. An etching solution supply unit supplies an etching solution to the substrate at the predetermined position. A rotating unit rotates the substrate holder about a predetermined rotation axis. A temperature distribution acquisition unit acquires the temperature distribution in a peripheral area around the substrate area occupied by the substrate when the substrate is arranged at the predetermined position in a chamber. A feature value calculator calculates, from the temperature distribution, a feature value relating an etching amount of the substrate by the etching using the etching solution.

Abstract: Provided in the present disclosure are a coating method and a film layer thereof, and a coating chucking appliance and an application thereof. The coating method comprises the steps of: forming a normal film layer on a first component on a substrate surface, and forming at least a thinner film layer on a second component on the substrate surface, wherein the thickness of the normal film layer is greater than the thickness of the thinner film layer. The coating method can prepare a thinner film layer on the surface of some portions or parts on the substrate surface, and prepare a thicker film layer on the surface of other portions or parts, thereby satisfying the requirements of coating a thinner film layer on some electronic components of the substrate, such as circuit interface components, ensuring data transmission performance.

Abstract: A processing apparatus includes: a processing container having a substantially cylindrical shape and provided with an exhaust slit on a side wall; and a plurality of gas nozzles extending in a vertical direction along an inside of the side wall of the processing container, disposed symmetrically with respect to a straight line connecting a center of the processing container and a center of the exhaust slit, and each configured to eject a same processing gas into the processing container.

Abstract: Methods and apparatus for substrate processing are described. In some embodiments a showerhead assembly includes a heated showerhead having a heater and a gas diffusion plate coupled to the heater, the gas diffusion plate having a plurality of channels extending through the gas diffusion plate; an ion filter spaced from the heated showerhead, the ion filter having a first side facing the heated showerhead and a second side opposite the first side, the ion filter having a plurality of channels extending through the ion filter; a heat transfer ring in contact between the heated showerhead and the ion filter, the heat transfer ring being thermally conductive and electrically insulative, the heat transfer ring comprised of a plurality of elements spaced from one another along an interface between the heated showerhead and the ion filter; and a remote plasma region defined between the heated showerhead and the ion filter.

Abstract: An electrode for a plasma processing apparatus is provided. The electrode comprises: a first conductive member; and a second member disposed in the first member and made of a material having a secondary electron emission coefficient different from a secondary electron emission coefficient of the first member.

Abstract: There is provided a technique that includes: a reaction container into which a substrate support including a substrate support region configured to support a substrate and a heat insulator provided below the substrate support region are inserted; a gas supplier configured to supply a gas into the reaction container; and a protruding portion protruding inward from an inner wall of the reaction container on an upper surface side of the heat insulator in a region of the inner wall of the reaction container where the gas supplier and the substrate support do not face each other.

Abstract: A substrate rotating apparatus comprises a main rotation mechanism, an auxiliary rotation mechanism, and a guide structure. The main rotation mechanism rotates around a first rotation shaft. The main rotation mechanism comprises the auxiliary rotation mechanism. The auxiliary rotation mechanism revolves about the first rotation shaft in accordance of rotation of the main rotation mechanism, and rotates around a second rotation shaft. The second rotation shaft is displaced in a radial direction with respect to the first rotation shaft. The guide structure has a contact surface extending in a circumferential direction with respect to the first rotation shaft. The guide structure controls displacement of the second rotation shaft in the radial direction, and causes the auxiliary rotation mechanism to perform the revolving motion in an orbit along the contact surface when the contact surface and the auxiliary rotation mechanism are in contact with each other.

Abstract: Etching stop which is caused by a metal released from a metal-containing mask can be avoided. A plasma etching method includes a protective film forming process of forming a protective film on a metal-containing film, which is formed on an etching target film and provided with a preset opening pattern, by a first processing gas; and an etching process of etching the etching target film by plasma generated from a second processing gas while using, as a mask, the metal-containing film on which the protective film is formed.

Abstract: A plasma processing apparatus including a plasma processing chamber in which an electrode for placing a substrate to be processed is provided; a power supply; and a control device configured to control the power supply, in which the control device is configured to execute heat-retaining discharge under a first condition in which the substrate is not placed on the electrode inside the plasma processing chamber to generate first plasma to heat an inner wall surface to a first temperature, rapid temperature control discharge under a second condition to generate second plasma inside the plasma processing chamber to heat the inner wall surface to a second temperature higher than the first temperature, and product processing of controlling the power supply under a third condition in a state where the substrate is placed on the electrode to generate third plasma inside the plasma processing chamber to process the substrate.