Patents by Inventor 4D-S PTY, LTD

4D-S PTY, LTD has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SYSTEMS AND METHODS FOR FABRICATING SELF-ALIGNED RESISTIVE/MAGNETIC MEMORY CELL
    Publication number: 20130224888
    Abstract: Systems and methods are disclosed to form a resistive random access memory (RRAM) by forming a first metal electrode layer; depositing an insulator above the metal electrode layer and etching the insulator to expose one or more metal portions; depositing a Pr1-xCaxMnO3 (PCMO) layer, in an electrically biased sputtering chamber, above the insulator and the metal portions, to form one or more self-aligned RRAM cells above the first metal electrode; and depositing a second metal electrode layer above the PCMO layer.
    Type: Application
    Filed: February 5, 2013
    Publication date: August 29, 2013
    Applicant: 4D-S PTY, LTD
    Inventor: 4D-S PTY, LTD
  • SYSTEMS AND METHODS FOR FABRICATING SELF-ALIGNED MEMORY CELL
    Publication number: 20130109150
    Abstract: Systems and methods are disclosed to form a resistive random access memory (RRAM) by forming a first metal electrode layer; depositing an insulator above the metal electrode layer and etching the insulator to expose one or more metal portions; depositing a Pr1-xCaxMnO3 (PCMO) layer above the insulator and the metal portions, wherein X is between approximately 0.3 and approximately 0.5, to form one or more self-aligned RRAM cells above the first metal electrode; and depositing a second metal electrode layer above the PCMO layer.
    Type: Application
    Filed: December 27, 2012
    Publication date: May 2, 2013
    Applicant: 4D-S PTY, LTD
    Inventor: 4D-S PTY, LTD