Publication number: 20250006839
Abstract: A transistor device may include a first perovskite gate material, a first perovskite ferroelectric material on the first gate material, a first p-type perovskite semiconductor material on the first ferroelectric material, a second perovskite ferroelectric material on the first semiconductor material, a second perovskite gate material on the second ferroelectric material, a third perovskite ferroelectric material on the second gate material, a second p-type perovskite semiconductor material on the third ferroelectric material, a fourth perovskite ferroelectric material on the second semiconductor material, a third perovskite gate material on the fourth ferroelectric material, a first source/drain metal adjacent a first side of each of the first semiconductor material and the second semiconductor material, a second source/drain metal adjacent a second side opposite the first side of each of the first semiconductor material and the second semiconductor material, and dielectric materials between the source/drain
Type:
Application
Filed:
June 28, 2023
Publication date:
January 2, 2025
Applicant:
Intel Corporation
Inventors:
Kevin P. O'Brien, Dmitri Evgenievich Nikonov, Rachel A. Steinhardt, Pratyush P. Buragohain, John J. Plombon, Hai Li, Gauri Auluck, I-Cheng Tung, Tristan A. Tronic, Dominique A. Adams, Punyashloka Debashis, Raseong Kim, Carly Rogan, Arnab Sen Gupta, Brandon Holybee, Marko Radosavljevic, Uygar E. Avci, Ian Alexander Young, Matthew V. Metz