Patents by Inventor A. Daniel Feller
A. Daniel Feller has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7731864Abstract: Described herein are embodiments of a slurry used for the chemical mechanical polishing a substrate that includes aluminum or an aluminum alloy features having a width of less than 1 um. The slurry includes a precipitated silica abrasive having a diameter of less than or equal to 100 nm and a chelating buffer system comprising citric acid and oxalic acid to provide a pH of the slurry in the approximate range of 1.5 and 4.0.Type: GrantFiled: June 29, 2005Date of Patent: June 8, 2010Assignee: Intel CorporationInventors: Allen Daniel Feller, Anne E. Miller
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Patent number: 7087188Abstract: A slurry for use in polishing a first material having a first hardness, wherein the first material overlies a second material having a second hardness, and the second hardness is greater than the first hardness, includes an abrasive that has a hardness which is greater than that of the first material but less than that of the second material. In a particular embodiment of the present invention copper overlying a copper diffusion barrier is polished with a slurry having an abrasive which is harder than copper but less hard than the copper diffusion barrier. Iron oxide, strontium titanate, apatite, dioptase, iron, brass, fluorite, hydrated iron oxide, and azurite, are examples of materials that are harder than copper but less hard than materials typically used as copper diffusion barriers in integrated circuits.Type: GrantFiled: February 5, 2003Date of Patent: August 8, 2006Assignee: Intel CorporationInventors: Kenneth C. Cadien, A. Daniel Feller
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Publication number: 20060112678Abstract: The invention relates to systems and methods for treating oxygen-rich NOx-containing exhaust. The systems and methods comprise using first and second NOx reducing catalysts. According to one aspect of the invention, the first catalyst reduces NOx in oxygen-rich exhaust primarily through reaction with a first reductant species and the second catalyst reduces NOx in oxygen-rich exhaust primarily through reaction with a second reductant species. Collectively, the two catalysts are substantially more effective than either of the catalysts individually in reducing the concentration of NOx in the exhaust. According to another aspect of the invention, an exhaust system is configured to inject a first reductant species primarily at a first location upstream of the first NOx reducing catalyst, and is configured to inject a second reductant species primarily at a second location downstream of the first NOx reducing catalyst, but upstream of the second NOx reducing catalyst.Type: ApplicationFiled: November 4, 2004Publication date: June 1, 2006Applicant: Eaton CorporationInventors: Wayne Kaboord, Daniel Fellers
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Publication number: 20060039847Abstract: One aspect of the invention relates to a process for synthesizing ammonia from hydrogen and nitrogen in which an adsorbant is provided to adsorb ammonia as it is being produced. Adsorption of the product drives the ammonia synthesis reaction and allows the process to be carried out at pressures where the gas phase equilibrium conversion is too low for a conventional system to be practical. The invention is applicable to both small and large scale ammonia synthesis. A small scale ammonia synthesis plant can be a stationary or vehicle-mounted plant used to supply reducing agent for selective catalytic reduction of NOx in diesel exhaust. Ammonia can be desorbed from the adsorbant, extracted from the adsorbant, or stored and transported in its adsorbed state.Type: ApplicationFiled: August 23, 2004Publication date: February 23, 2006Applicant: Eaton CorporationInventors: Wayne Kaboord, Dawn Becher, Fred Begale, Daniel Fellers, Steven Kuznicki
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Publication number: 20050247049Abstract: The invention relates to systems for removing NOx from exhaust. In one aspect of the invention, after adsorption, an NOx adsorber is isolated from the main exhaust flow and desorption induced by raising the temperature. The desorbed NOx is combined with a reductant and reduced over a catalyst. Preferably, the reductant is syn gas produced in an on-board reformer. The catalyst need never be exposed to the main exhaust flow, which is particularly advantageous for catalysts sensitive to water, oxygen, or sulfur. In another aspect of the invention, a recirculating flow is induced through an NOx adsorber during a regeneration cycle. Recirculation can induce greater desorption at a given temperature, provide a source of heat for the adsorber, and allow a higher conversion rate with a fixed amount of catalyst. A further aspect of the invention relates to a vehicle-mounted adsorbers with provisions for heating.Type: ApplicationFiled: May 5, 2004Publication date: November 10, 2005Applicant: Eaton CorporationInventors: Wayne Kaboord, Dawn Becher, Fred Begale, Daniel Fellers, John Kovacich, Steven Kuznicki
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Patent number: 6915860Abstract: A fire fighting apparatus includes a high ground-clearance motorized vehicle having a chassis and rear drive wheels, and a quenching agent tank affixed to the chassis, the quenching agent tank being made of a first tank portion; and a second tank portion located between the first tank portion and the chassis, a width of the second tank portion being greater than a width of the first tank portion, and a distance between a center of mass of the tank and the chassis being as small as possible.Type: GrantFiled: December 23, 2002Date of Patent: July 12, 2005Inventor: Daniel A. Feller
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Patent number: 6909193Abstract: A slurry for copper polishing has a pH between 7.5 and 12. In a particular embodiment of the present invention, a slurry for polishing copper has a pH between 8 and 11.5, and includes a siO2 abrasive, a (NH4)2S2O8 oxidizer, a benzotriazole corrosion inhibitor, and a K3PO4/K2HPO4 buffer. A copper polish slurry, in accordance with the present invention, operates with a high pH of greater than approximately 7.5. In this range the slurry has a low static etch due to formation of a robust, protective layer. This slurry may additionally have S2O8?2 or Fe(CN)6 ?3 as an oxidizer and can thus offer a high polish rate on the order of 7,000 to 10,000 angstroms per minute which does not decrease significantly during polishing. Such an inventive slurry offers a wide CMP process window such that the slurry and process parameters can be optimized to yield low recess, erosion, and dishing on patterned wafers.Type: GrantFiled: August 12, 2004Date of Patent: June 21, 2005Assignee: Intel CorporationInventors: Anne E. Miller, A. Daniel Feller, Kenneth Cadien
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Patent number: 6881674Abstract: A slurry for use in polishing a first material having a first hardness, wherein the first material overlies a second material having a second hardness, and the second hardness is greater than the first hardness, includes an abrasive that has a hardness which is greater than that of the first material but less than that of the second material. In a particular embodiment of the present invention copper overlying a copper diffusion barrier is polished with a slurry having an abrasive which is harder than copper but less hard than the copper diffusion barrier. Iron oxide, strontium titanate, apatite, dioptase, iron, brass, fluorite, hydrated iron oxide, and azurite, are examples of materials that are harder than copper but less hard than materials typically used as copper diffusion barriers in integrated circuits.Type: GrantFiled: December 28, 1999Date of Patent: April 19, 2005Assignee: Intel CorporationInventors: Kenneth C. Cadien, A. Daniel Feller
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Patent number: 6825117Abstract: A slurry for copper polishing has a pH between 7.5 and 12. In a particular embodiment of the present invention, a slurry for polishing copper has a pH between 8 and 11.5, and includes a SiO2 abrasive, a (NH4)2S2O8 oxidizer, a benzotriazole corrosion inhibitor, and a K3PO4/K2HPO4 buffer. A copper polish slurry, in accordance with the present invention, operates with a high pH of greater than approximately 7.5. In this range the slurry has a low static etch due to formation of a robust, protective layer. This slurry may additionally have S2O8−2 or Fe(CN)6−3 as an oxidizer and can thus offer a high polish rate on the order of 7,000 to 10,000 angstroms per minute which does not decrease significantly during polishing. Such an inventive slurry offers a wide CMP process window such that the slurry and process parameters can be optimized to yield low recess, erosion, and dishing on patterned wafers.Type: GrantFiled: December 14, 1999Date of Patent: November 30, 2004Assignee: Intel CorporationInventors: Anne E. Miller, A. Daniel Feller, Kenneth Cadien
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Publication number: 20040203227Abstract: The invention provides a chemical-mechanical polishing slurry comprising a liquid, cerium ions as an oxidizer, an abrasive, and a pH increasing substance. The cerium ions are in the liquid in a quantity equal to the inclusion of at least 0.02 molar ammonium cerium nitrate in the liquid. The abrasive is also included in the liquid. The liquid, the cerium ions and the abrasive jointly have a first pH value. The pH increasing substance increases the first pH value to a second pH value above 1.5.Type: ApplicationFiled: April 29, 2004Publication date: October 14, 2004Inventors: Anne E. Miller, A. Daniel Feller, Kenneth C. Cadien
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Publication number: 20040203245Abstract: The invention provides a chemical-mechanical polishing slurry comprising a liquid, cerium ions as an oxidizer, an abrasive, and a pH increasing substance. The cerium ions are in the liquid in a quantity equal to the inclusion of at least 0.02 molar ammonium cerium nitrate in the liquid. The abrasive is also included in the liquid. The liquid, the cerium ions and the abrasive jointly have a first pH value. The pH increasing substance increases the first pH value to a second pH value above 1.5.Type: ApplicationFiled: April 29, 2004Publication date: October 14, 2004Inventors: Anne E. Miller, A. Daniel Feller, Kenneth C. Cadien
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Publication number: 20040118937Abstract: A fire fighting apparatus includes a high ground-clearance motorized vehicle having a chassis and rear drive wheels, and a quenching agent tank affixed to the chassis, the quenching agent tank being made of a first tank portion; and a second tank portion located between the first tank portion and the chassis, a width of the second tank portion being greater than a width of the first tank portion, and a distance between a center of mass of the tank and the chassis being as small as possible.Type: ApplicationFiled: December 23, 2002Publication date: June 24, 2004Inventor: Daniel A. Feller
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Patent number: 6752844Abstract: The invention provides a chemical-mechanical polishing slurry comprising a liquid, cerium ions as an oxidizer, an abrasive, and a pH increasing substance. The cerium ions are in the liquid in a quantity equal to the inclusion of at least 0.02 molar ammonium cerium nitrate in the liquid. The abrasive is also included in the liquid. The liquid, the cerium ions and the abrasive jointly have a first pH value. The pH increasing substance increases the first pH value to a second pH value above 1.5.Type: GrantFiled: March 29, 1999Date of Patent: June 22, 2004Assignee: Intel CorporationInventors: Anne E. Miller, A. Daniel Feller, Kenneth C. Cadien
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Patent number: 6740591Abstract: A copper polish slurry, for chemical mechanical polishing of copper and copper diffusion barriers may be formed by combining a chelating, organic acid buffer system such as citric acid and potassium citrate; and an abrasive, such as for example colloidal silica. Alternative copper polish slurries, in accordance with the present invention, may be formed by further combining an oxidizer, such as hydrogen peroxide, and/or a corrosion inhibitor such as benzotriazole. Advantageous properties of slurries in accordance with the present invention include the enhancement of Cu removal rates to >3000 angstroms per minute. This high polish rate is achieved while maintaining local pH stability and substantially reducing global and local corrosion as compared to prior art copper polish slurries. Local pH stability provides for reduced within-wafer non-uniformity and reduced corrosion defects.Type: GrantFiled: November 16, 2000Date of Patent: May 25, 2004Assignee: Intel CorporationInventors: Anne E. Miller, A. Daniel Feller, Kenneth C. Cadien
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Patent number: 6719614Abstract: Methods for the chemical-mechanical polishing (CMP) of copper layers on integrated circuits are described, along with the chemical compositions of various pre- and post-polishing solutions. In one embodiment, a pre-polish cleaning operation with a complexing organic acid buffer system is performed prior to the CMP of the copper. In alternative embodiments, a rinse operation is performed subsequent to the cleaning operation and prior to the CMP. In further alternatives, a post-polish cleaning operation with a chelating agent is performed. In still further alternatives, the pH of a pre-polish cleaner is ramped during the pre-polish cleaning operation to match the pH of the polish slurry which is used, subsequent to the cleaning operation, to remove excess portions of the copper layer to be polished.Type: GrantFiled: January 9, 2002Date of Patent: April 13, 2004Assignee: Intel CorporationInventors: Anne E. Miller, A. Daniel Feller, Kenneth C. Cadien
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Publication number: 20030211745Abstract: A copper polish slurry, useful in the manufacture of integrated circuits generally, and for chemical mechanical polishing of copper and copper diffusion barriers particularly, may be formed by combining a chelating, organic acid buffer system such as citric acid and potassium citrate; and an abrasive, such as for example colloidal silica. Alternative copper polish slurries, in accordance with the present invention, may be formed by further combining an oxidizer, such as hydrogen peroxide, and/or a corrosion inhibitor such as benzotriazole. Advantageous properties of slurries in accordance with the present invention include the enhancement of Cu removal rates to >3000 angstroms per minute. This high polish rate is achieved while maintaining local pH stability and substantially reducing global and local corrosion as compared to prior art copper polish slurries. Local pH stability provides for reduced within-wafer non-uniformity and reduced corrosion defects.Type: ApplicationFiled: June 11, 2003Publication date: November 13, 2003Inventors: Anne E. Miller, A. Daniel Feller, Kenneth C. Cadien
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Publication number: 20030143851Abstract: A slurry for use in polishing a first material having a first hardness, wherein the first material overlies a second material having a second hardness, and the second hardness is greater than the first hardness, includes an abrasive that has a hardness which is greater than that of the first material but less than that of the second material. In a particular embodiment of the present invention copper overlying a copper diffusion barrier is polished with a slurry having an abrasive which is harder than copper but less hard than the copper diffusion barrier. Iron oxide, strontium titanate, apatite, dioptase, iron, brass, fluorite, hydrated iron oxide, and azurite, are examples of materials that are harder than copper but less hard than materials typically used as copper diffusion barriers in integrated circuits.Type: ApplicationFiled: February 5, 2003Publication date: July 31, 2003Inventors: Kenneth C. Cadien, A. Daniel Feller
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Publication number: 20030134512Abstract: A slurry for copper polishing has a pH between 7.5 and 12. In a particular embodiment of the present invention, a slurry for polishing copper has a pH between 8 and 11.5, and includes a SiO2 abrasive, a (NH4)2S2O8 oxidizer, a benzotriazole corrosion inhibitor, and a K3PO4/K2HPO4 buffer. A copper polish slurry, in accordance with the present invention, operates with a high pH of greater than approximately 7.5. In this range the slurry has a low static etch due to formation of a robust, protective layer. This slurry may additionally have S2O8−2 or Fe(CN)6−3 as an oxidizer and can thus offer a high polish rate on the order of 7,000 to 10,000 angstroms per minute which does not decrease significantly during polishing. Such an inventive slurry offers a wide CMP process window such that the slurry and process parameters can be optimized to yield low recess, erosion, and dishing on patterned wafers.Type: ApplicationFiled: December 14, 1999Publication date: July 17, 2003Inventors: ANNE E. MILLER, A. DANIEL FELLER, KENNETH CADIEN
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Publication number: 20030129838Abstract: A slurry for use in polishing a first material having a first hardness, wherein the first material overlies a second material having a second hardness, and the second hardness is greater than the first hardness, includes an abrasive that has a hardness which is greater than that of the first material but less than that of the second material. In a particular embodiment of the present invention copper overlying a copper diffusion barrier is polished with a slurry having an abrasive which is harder than copper but less hard than the copper diffusion barrier. Iron oxide, strontium titanate, apatite, dioptase, iron, brass, fluorite, hydrated iron oxide, and azurite, are examples of materials that are harder than copper but less hard than materials typically used as copper diffusion barriers in integrated circuits.Type: ApplicationFiled: December 28, 1999Publication date: July 10, 2003Inventors: KENNETH C. CADIEN, A. DANIEL FELLER
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Publication number: 20020177316Abstract: A copper polish slurry, useful in the manufacture of integrated circuits generally, and for chemical mechanical polishing of copper and copper diffusion barriers particularly, may be formed by combining a chelating, organic acid buffer system such as citric acid and potassium citrate; and an to abrasive, such as for example colloidal silica. Alternative copper polish slurries, in accordance with the present invention, may be formed by further combining an oxidizer, such as hydrogen peroxide, and/or a corrosion inhibitor such as benzotriazole. Advantageous properties of slurries in accordance with the present invention include the enhancement of Cu removal rates to >3000 angstroms per minute. This high polish rate is achieved while maintaining local pH stability and substantially reducing global and local corrosion as compared to prior art copper polish slurries. Local pH stability provides for reduced within-wafer non-uniformity and reduced corrosion defects.Type: ApplicationFiled: July 11, 2002Publication date: November 28, 2002Inventors: Anne E. Miller, A. Daniel Feller, Kenneth C. Cadien