Abstract: A slurry for use in polishing a first material having a first hardness, wherein the first material overlies a second material having a second hardness, and the second hardness is greater than the first hardness, includes an abrasive that has a hardness which is greater than that of the first material but less than that of the second material. In a particular embodiment of the present invention copper overlying a copper diffusion barrier is polished with a slurry having an abrasive which is harder than copper but less hard than the copper diffusion barrier. Iron oxide, strontium titanate, apatite, dioptase, iron, brass, fluorite, hydrated iron oxide, and azurite, are examples of materials that are harder than copper but less hard than materials typically used as copper diffusion barriers in integrated circuits.

Abstract: A slurry for copper polishing has a pH between 7.5 and 12. In a particular embodiment of the present invention, a slurry for polishing copper has a pH between 8 and 11.5, and includes a siO2 abrasive, a (NH4)2S2O8 oxidizer, a benzotriazole corrosion inhibitor, and a K3PO4/K2HPO4 buffer. A copper polish slurry, in accordance with the present invention, operates with a high pH of greater than approximately 7.5. In this range the slurry has a low static etch due to formation of a robust, protective layer. This slurry may additionally have S2O8?2 or Fe(CN)6 ?3 as an oxidizer and can thus offer a high polish rate on the order of 7,000 to 10,000 angstroms per minute which does not decrease significantly during polishing. Such an inventive slurry offers a wide CMP process window such that the slurry and process parameters can be optimized to yield low recess, erosion, and dishing on patterned wafers.

Abstract: A slurry for use in polishing a first material having a first hardness, wherein the first material overlies a second material having a second hardness, and the second hardness is greater than the first hardness, includes an abrasive that has a hardness which is greater than that of the first material but less than that of the second material. In a particular embodiment of the present invention copper overlying a copper diffusion barrier is polished with a slurry having an abrasive which is harder than copper but less hard than the copper diffusion barrier. Iron oxide, strontium titanate, apatite, dioptase, iron, brass, fluorite, hydrated iron oxide, and azurite, are examples of materials that are harder than copper but less hard than materials typically used as copper diffusion barriers in integrated circuits.

Abstract: A slurry for copper polishing has a pH between 7.5 and 12. In a particular embodiment of the present invention, a slurry for polishing copper has a pH between 8 and 11.5, and includes a SiO2 abrasive, a (NH4)2S2O8 oxidizer, a benzotriazole corrosion inhibitor, and a K3PO4/K2HPO4 buffer. A copper polish slurry, in accordance with the present invention, operates with a high pH of greater than approximately 7.5. In this range the slurry has a low static etch due to formation of a robust, protective layer. This slurry may additionally have S2O8−2 or Fe(CN)6−3 as an oxidizer and can thus offer a high polish rate on the order of 7,000 to 10,000 angstroms per minute which does not decrease significantly during polishing. Such an inventive slurry offers a wide CMP process window such that the slurry and process parameters can be optimized to yield low recess, erosion, and dishing on patterned wafers.

Abstract: The invention provides a chemical-mechanical polishing slurry comprising a liquid, cerium ions as an oxidizer, an abrasive, and a pH increasing substance. The cerium ions are in the liquid in a quantity equal to the inclusion of at least 0.02 molar ammonium cerium nitrate in the liquid. The abrasive is also included in the liquid. The liquid, the cerium ions and the abrasive jointly have a first pH value. The pH increasing substance increases the first pH value to a second pH value above 1.5.

Abstract: The invention provides a chemical-mechanical polishing slurry comprising a liquid, cerium ions as an oxidizer, an abrasive, and a pH increasing substance. The cerium ions are in the liquid in a quantity equal to the inclusion of at least 0.02 molar ammonium cerium nitrate in the liquid. The abrasive is also included in the liquid. The liquid, the cerium ions and the abrasive jointly have a first pH value. The pH increasing substance increases the first pH value to a second pH value above 1.5.

Abstract: The invention provides a chemical-mechanical polishing slurry comprising a liquid, cerium ions as an oxidizer, an abrasive, and a pH increasing substance. The cerium ions are in the liquid in a quantity equal to the inclusion of at least 0.02 molar ammonium cerium nitrate in the liquid. The abrasive is also included in the liquid. The liquid, the cerium ions and the abrasive jointly have a first pH value. The pH increasing substance increases the first pH value to a second pH value above 1.5.

Abstract: A copper polish slurry, for chemical mechanical polishing of copper and copper diffusion barriers may be formed by combining a chelating, organic acid buffer system such as citric acid and potassium citrate; and an abrasive, such as for example colloidal silica. Alternative copper polish slurries, in accordance with the present invention, may be formed by further combining an oxidizer, such as hydrogen peroxide, and/or a corrosion inhibitor such as benzotriazole. Advantageous properties of slurries in accordance with the present invention include the enhancement of Cu removal rates to >3000 angstroms per minute. This high polish rate is achieved while maintaining local pH stability and substantially reducing global and local corrosion as compared to prior art copper polish slurries. Local pH stability provides for reduced within-wafer non-uniformity and reduced corrosion defects.

Abstract: Methods for the chemical-mechanical polishing (CMP) of copper layers on integrated circuits are described, along with the chemical compositions of various pre- and post-polishing solutions. In one embodiment, a pre-polish cleaning operation with a complexing organic acid buffer system is performed prior to the CMP of the copper. In alternative embodiments, a rinse operation is performed subsequent to the cleaning operation and prior to the CMP. In further alternatives, a post-polish cleaning operation with a chelating agent is performed. In still further alternatives, the pH of a pre-polish cleaner is ramped during the pre-polish cleaning operation to match the pH of the polish slurry which is used, subsequent to the cleaning operation, to remove excess portions of the copper layer to be polished.

Abstract: A copper polish slurry, useful in the manufacture of integrated circuits generally, and for chemical mechanical polishing of copper and copper diffusion barriers particularly, may be formed by combining a chelating, organic acid buffer system such as citric acid and potassium citrate; and an abrasive, such as for example colloidal silica. Alternative copper polish slurries, in accordance with the present invention, may be formed by further combining an oxidizer, such as hydrogen peroxide, and/or a corrosion inhibitor such as benzotriazole. Advantageous properties of slurries in accordance with the present invention include the enhancement of Cu removal rates to >3000 angstroms per minute. This high polish rate is achieved while maintaining local pH stability and substantially reducing global and local corrosion as compared to prior art copper polish slurries. Local pH stability provides for reduced within-wafer non-uniformity and reduced corrosion defects.

Abstract: A slurry for use in polishing a first material having a first hardness, wherein the first material overlies a second material having a second hardness, and the second hardness is greater than the first hardness, includes an abrasive that has a hardness which is greater than that of the first material but less than that of the second material. In a particular embodiment of the present invention copper overlying a copper diffusion barrier is polished with a slurry having an abrasive which is harder than copper but less hard than the copper diffusion barrier. Iron oxide, strontium titanate, apatite, dioptase, iron, brass, fluorite, hydrated iron oxide, and azurite, are examples of materials that are harder than copper but less hard than materials typically used as copper diffusion barriers in integrated circuits.

Abstract: A slurry for copper polishing has a pH between 7.5 and 12. In a particular embodiment of the present invention, a slurry for polishing copper has a pH between 8 and 11.5, and includes a SiO2 abrasive, a (NH4)2S2O8 oxidizer, a benzotriazole corrosion inhibitor, and a K3PO4/K2HPO4 buffer. A copper polish slurry, in accordance with the present invention, operates with a high pH of greater than approximately 7.5. In this range the slurry has a low static etch due to formation of a robust, protective layer. This slurry may additionally have S2O8−2 or Fe(CN)6−3 as an oxidizer and can thus offer a high polish rate on the order of 7,000 to 10,000 angstroms per minute which does not decrease significantly during polishing. Such an inventive slurry offers a wide CMP process window such that the slurry and process parameters can be optimized to yield low recess, erosion, and dishing on patterned wafers.

Abstract: A slurry for use in polishing a first material having a first hardness, wherein the first material overlies a second material having a second hardness, and the second hardness is greater than the first hardness, includes an abrasive that has a hardness which is greater than that of the first material but less than that of the second material. In a particular embodiment of the present invention copper overlying a copper diffusion barrier is polished with a slurry having an abrasive which is harder than copper but less hard than the copper diffusion barrier. Iron oxide, strontium titanate, apatite, dioptase, iron, brass, fluorite, hydrated iron oxide, and azurite, are examples of materials that are harder than copper but less hard than materials typically used as copper diffusion barriers in integrated circuits.

Abstract: A copper polish slurry, useful in the manufacture of integrated circuits generally, and for chemical mechanical polishing of copper and copper diffusion barriers particularly, may be formed by combining a chelating, organic acid buffer system such as citric acid and potassium citrate; and an to abrasive, such as for example colloidal silica. Alternative copper polish slurries, in accordance with the present invention, may be formed by further combining an oxidizer, such as hydrogen peroxide, and/or a corrosion inhibitor such as benzotriazole. Advantageous properties of slurries in accordance with the present invention include the enhancement of Cu removal rates to >3000 angstroms per minute. This high polish rate is achieved while maintaining local pH stability and substantially reducing global and local corrosion as compared to prior art copper polish slurries. Local pH stability provides for reduced within-wafer non-uniformity and reduced corrosion defects.

Abstract: Methods for the chemical-mechanical polishing (CMP) of copper layers on integrated circuits are described, along with the chemical compositions of various pre- and post-polishing solutions. In one embodiment, a pre-polish cleaning operation with a complexing organic acid buffer system is performed prior to the CMP of the copper. In alternative embodiments, a rinse operation is performed subsequent to the cleaning operation and prior to the CMP. In further alternatives, a post-polish cleaning operation with a chelating agent is performed. In still further alternatives, the pH of a pre-polish cleaner is ramped during the pre-polish cleaning operation to match the pH of the polish slurry which is used, subsequent to the cleaning operation, to remove excess portions of the copper layer to be polished.

Abstract: Methods for the chemical-mechanical polishing (CMP) of copper layers on integrated circuits are described, along with the chemical compositions of various pre- and post-polishing solutions. In one embodiment, a pre-polish cleaning operation with a complexing organic acid buffer system is performed prior to the CMP of the copper. In alternative embodiments, a rinse operation is performed subsequent to the cleaning operation and prior to the CMP. In further alternatives, a post-polish cleaning operation with a chelating agent is performed. In still further alternatives, the pH of a pre-polish cleaner is ramped during the pre-polish cleaning operation to match the pH of the polish slurry which is used, subsequent to the cleaning operation, to remove excess portions of the copper layer to be polished.

Abstract: Methods for the chemical-mechanical polishing (CMP) of copper layers on integrated circuits are described, along with the chemical compositions of various pre- and post-polishing solutions. In one embodiment, a pre-polish cleaning operation with a complexing organic acid buffer system is performed prior to the CMP of the copper. In alternative embodiments, a rinse operation is performed subsequent to the cleaning operation and prior to the CMP. In further alternatives, a post-polish cleaning operation with a chelating agent is performed. In still further alternatives, the pH of a pre-polish cleaner is ramped during the pre-polish cleaning operation to match the pH of the polish slurry which is used, subsequent to the cleaning operation, to remove excess portions of the copper layer to be polished.

Abstract: Methods for the chemical-mechanical polishing (CMP) of copper layers on integrated circuits are described, along with the chemical compositions of various pre- and post-polishing solutions. In one embodiment, a pre-polish cleaning operation with a complexing organic acid buffer system is performed prior to the CMP of the copper. In alternative embodiments, a rinse operation is performed subsequent to the cleaning operation and prior to the CMP. In further alternatives, a post-polish cleaning operation with a chelating agent is performed. In still further alternatives, the pH of a pre-polish cleaner is ramped during the pre-polish cleaning operation to match the pH of the polish slurry which is used, subsequent to the cleaning operation, to remove excess portions of the copper layer to be polished.

Abstract: Methods for the chemical-mechanical polishing (CMP) of copper layers on integrated circuits are described, along with the chemical compositions of various pre- and post-polishing solutions. In one embodiment, a pre-polish cleaning operation with a complexing organic acid buffer system is performed prior to the CMP of the copper. In alternative embodiments, a rinse operation is performed subsequent to the cleaning operation and prior to the CMP. In further alternatives, a post-polish cleaning operation with a chelating agent is performed. In still further alternatives, the pH of a pre-polish cleaner is ramped during the pre-polish cleaning operation to match the pH of the polish slurry which is used, subsequent to the cleaning operation, to remove excess portions of the copper layer to be polished.

Abstract: The invention provides a chemical-mechanical polishing slurry comprising a liquid, cerium ions as an oxidizer, an abrasive, and a pH increasing substance. The cerium ions are in the liquid in a quantity equal to the inclusion of at least 0.02 molar ammonium cerium nitrate in the liquid. The abrasive is also included in the liquid. The liquid, the cerium ions and the abrasive jointly have a first pH value. The pH increasing substance increases the first pH value to a second pH value above 1.5.