Abstract: The present disclosure relates to methods for the detection of melanoma and non-Hodgkin's lymphoma using attenuated total reflection Fourier transform infrared (ATR-FTIR) spectroscopy. Further disclosed are methods for treating melanoma and non-Hodgkin's lymphoma, based on differences in infrared absorbance.

Abstract: The present disclosure relates to methods for the detection of melanoma and non-Hodgkin's lymphoma using attenuated total reflection Fourier transform infrared (ATR-FTIR) spectroscopy. Further disclosed are methods for treating melanoma and non-Hodgkin's lymphoma, based on differences in infrared absorbance.

Abstract: Disclosed are methods, systems, and apparatuses for non-invasive detection of colitis in a subject. The methods involve depositing a bodily fluid sample from the subject on an internal reflection element (IRE). A beam of infrared (IR) radiation can then be directed through the IRE under conditions such that the IR radiation interacts with the bodily fluid sample. An absorption spectrum can then be recorded over a range of preselected frequencies to detect peaks that are affected by colitis. In preferred embodiments, the methods and systems involve Fourier Transform Infrared Spectroscopy (FTIR).

Abstract: Various examples are provided for hot carrier spectral photodetectors that can be tuned. In one example, among others, a hot-carrier photodetector includes a graded barrier; an absorber disposed on the graded barrier; and a second barrier disposed on the absorber. For example, the absorber can include p-type doped GaAs. The graded barrier is disposed between the absorber and an injector, which can include p-type doped GaAs. In some implementations, the hot-carrier detector can include multiple barriers and absorbers. The hot-carrier photodetector can include an optical source (e.g., a LED) to trigger the VLWIR response in the photodetector.

Abstract: Disclosed are methods, systems, and apparatuses for non-invasive detection of colitis in a subject. The methods involve depositing a bodily fluid sample from the subject on an internal reflection element (IRE). A beam of infrared (IR) radiation can then be directed through the IRE under conditions such that the IR radiation interacts with the bodily fluid sample. An absorption spectrum can then be recorded over a range of preselected frequencies to detect peaks that are affected by colitis. In preferred embodiments, the methods and systems involve Fourier Transform Infrared Spectroscopy (FTIR).

Abstract: Disclosed are methods, systems, and apparatuses for rapidly detecting a cellular interaction, such as ligand:receptor interactions. For example, the disclosed methods and systems can be used to detect a cellular interaction within 15 minutes to 75 minutes. This allows cells to be used as biosensors to detect cell activating agents in a sample.

Abstract: Disclosed are methods, systems, and apparatuses for rapidly detecting a cellular interaction, such as ligand:receptor interactions. For example, the disclosed methods and systems can be used to detect a cellular interaction within 15 minutes to 75 minutes. This allows cells to be used as biosensors to detect cell activating agents in a sample.

Abstract: Various examples are provided for hot carrier spectral photodetectors that can be tuned. In one example, among others, a hot-carrier photodetector includes a graded barrier; an absorber disposed on the graded barrier; and a second barrier disposed on the absorber. For example, the absorber can include p-type doped GaAs. The graded barrier is disposed between the absorber and an injector, which can include p-type doped GaAs. In some implementations, the hot-carrier detector can include multiple barriers and absorbers. The hot-carrier photodetector can include an optical source (e.g., a LED) to trigger the VLWIR response in the photodetector.

Abstract: A high operating temperature split-off band infrared (SPIP) detector having a double and/or graded barrier on either side of the emitter is provided. The photodetector may include a first and second barrier and an emitter disposed between the first and second barriers so as to form a heterojunction at each interface between the emitter and the first and second barriers, respectively. The emitter may be of a first semiconductor material having a split-off response to optical signals, while one of the first or the second barriers may include a double barrier having a light-hole energy band level that is aligned with the split-off band energy level of the emitter. In addition, the remaining barrier may be graded.

Abstract: A dual band photodetector for detecting infrared and ultraviolet optical signals is disclosed. Aspects include homojunction and heterojunction detectors comprised of one or more of GaN, AlGaN, and InGaN. In one aspect ultraviolet/infrared dual-band detector is disclosed that is configured to simultaneously detect UV and IR.

Abstract: A high operating temperature split-off band infrared (SPIP) detector having a double and/or graded barrier on either side of the emitter is provided. The photodetector may include a first and second barrier and an emitter disposed between the first and second barriers so as to form a heterojunction at each interface between the emitter and the first and second barriers, respectively. The emitter may be of a first semiconductor material having a split-off response to optical signals, while one of the first or the second barriers may include a double barrier having a light-hole energy band level that is aligned with the split-off band energy level of the emitter. In addition, the remaining barrier may be graded.

Abstract: A dual band photodetector for detecting infrared and ultraviolet optical signals is disclosed. Aspects include homojunction and heterojunction detectors comprised of one or more of GaN, AlGaN, and InGaN. In one aspect ultraviolet/infrared dual-band detector is disclosed that is configured to simultaneously detect UV and IR.

Abstract: A dual band photodetector for detecting infrared and ultraviolet optical signals is disclosed. Aspects include homojunction and heterojunction detectors comprised of one or more of GaN, AlGaN, and InGaN. In one aspect ultraviolet/infrared dual-band detector is disclosed that is configured to simultaneously detect UV and IR.

Abstract: Systems and methods for at or near room temperature of infrared detection are disclosed. Embodiments of the disclosure include high temperature split-off band infrared detectors. One embodiment, among others, comprises a first barrier and a second barrier with an emitter disposed between the first and second barrier, each barrier being a layer of a first semiconductor material and the emitter being a layer of a second semiconductor material.

Abstract: Systems and methods for at or near room temperature of infrared detection are disclosed. Embodiments of the disclosure include high temperature split-off band infrared detectors. One embodiment, among others, comprises a first barrier and a second barrier with an emitter disposed between the first and second barrier, each barrier being a layer of a first semiconductor material and the emitter being a layer of a second semiconductor material.

Abstract: A photodetector and method of detecting far infrared optical signals. In one embodiment of the present invention, the photodetctor has a plurality of N barriers, N being an integer greater than 1, each barrier being a layer of a material made from a first and a second group III elements and a first group V element and characterized by a bandgap. The photodetector further has a plurality of N?1 emitters, each emitter being a layer of material made from a third group III element and a second group V element and characterized by a bandgap different from that of the barriers and having at least one free carrier responsive to optical signals, wherein each emitter is located between two barriers so as to form a heterojunction at each interface between an emitter and a barrier.

Abstract: Far infrared light is detected using semiconductor devices having at least two doped layers with adjacent doped layers separated by undoped layers. The technique includes doping to levels which establish work functions at interfacial barriers between the doped and undoped layers approximately equal to the photon energy of far infrared light of the longest wavelength to be detected. The devices are forward biased, cooled to a temperature at which thermal excitation of carriers in the doped layers is less than the work function, and exposed to far infrared light of a band width including the selected longest wavelength. Photo current produced by excitation of carriers over the interfacial barriers is then measured. The method can be applied to existing p-i-n diodes and superlattice structures as well as devices fabricated to respond to specific far infrared wavelength bands.