Abstract: A method includes: forming an interconnect structure over a substrate, the forming of the interconnect structure includes forming a memory device including a transistor. The forming of the interconnect structure includes: forming a first metallization layer and a second metallization layer over the first metallization layer; forming a gate region of the transistor in at least one of the first and second metallization layers; etching a trench disposed in the second metallization layer and exposing the gate region; depositing a gate dielectric layer in the trench over the gate region; depositing a channel layer in the trench over the gate dielectric layer; and forming two source/drain regions of the transistor over the channel layer on opposite sides of the trench. At least one of the gate region and the channel layer includes two first segments extending in the trench, wherein the first segments are parallel with each other.

Abstract: A transistor includes a gate structure that has a first gate dielectric layer and a second gate dielectric layer. The first gate dielectric layer is disposed over the substrate. The first gate dielectric layer contains a first type of dielectric material that has a first dielectric constant. The second gate dielectric layer is disposed over the first gate dielectric layer. The second gate dielectric layer contains a second type of dielectric material that has a second dielectric constant. The second dielectric constant is greater than the first dielectric constant. The first dielectric constant and the second dielectric constant are each greater than a dielectric constant of silicon oxide.

Abstract: A method includes forming a plurality of dielectric layers over a semiconductor substrate, forming a plurality of metal lines and vias in the plurality of dielectric layers, forming a lower portion of an inner seal ring and a lower portion of an outer seal ring extending into the plurality of dielectric layers, depositing a first dielectric layer over the plurality of metal lines and vias, and etching the first dielectric layer to form an opening penetrating through the first dielectric layer. After the first dielectric layer is etched, a top surface of the lower portion of the inner seal ring is exposed, and an entire topmost surface of the lower portion of the outer seal ring is in contact with a bottom surface of the first dielectric layer. An upper portion of the inner seal ring is then formed to extend into the opening and to join the lower portion of the inner seal ring. A second dielectric layer is deposited to cover the upper portion of the inner seal ring.

Abstract: A method includes forming a first conductive feature on a substrate, forming a via that contacts the first conductive feature, the via comprising a conductive material, performing a Chemical Mechanical Polishing (CMP) process to a top surface of the via, depositing an Interlayer Dielectric (ILD) layer on the via, forming a trench within the ILD layer to expose the via, and filling the trench with a second conductive feature that contacts the via, the second conductive feature comprising a same material as the conductive material.

Abstract: A layout method of large-flux algae control wells based on a sluice-pump hub area includes: defining positions of a sluice-pump hub and a river diversion channel as a sluice-pump hub area, arranging at least two sets of pumping station units at the water outlet end of the river diversion channel, using a water flow model to guide streamline and flow velocity distribution of water flow in the river diversion channel, and determining whether it is necessary to adopt rectification measures based on water flow streamline and flow velocity distribution; and obtaining hydraulic characteristic values of the pumping station units, determining whether the currently arranged algae control wells and the adopted rectifying measures simultaneously meet the algae control requirements and subsequent running requirements of the pumping station units based on the hydraulic characteristic values.

Abstract: A door locking mechanism and semiconductor container using the same include door panel, cover, and locking module. The door panel has a first stop structure. The cover and the door panel define an accommodating space for receiving the locking module. The locking module includes rotating member, holding member, and elastic member. The elastic member is disposed on the holding member and has a second stop structure near the first stop structure. The elastic member is disposed between the holding and the rotating member. The elastic member is compressed when a force is applied to the holding member, and the second stop structure detaches from a limitation state with the first stop structure for allowing a rotating operation of the rotating member. The elastic member elastically restores when the force is removed, and the second stop structure returns to the limitation state for limiting the rotating operation.

Abstract: A clock gating circuit includes an input circuit, a cross-coupled pair of transistors, a first transistor of a first type and a first pull-up transistor of the first type. The input circuit is configured to set a first control signal of a first node in response to a first or second enable signal. The cross-coupled pair of transistors is coupled between the first node and an output node. The first transistor is coupled between the first and a second node. The first pull-up transistor includes a first gate terminal, a first drain terminal and a first source terminal. The first gate terminal is configured to receive an inverted clock input signal. The first drain terminal is coupled to the second node and the first transistor. The first pull-up transistor is configured to adjust a clock output signal responsive to the inverted clock input signal.

Abstract: The present disclosure relates to a semiconductor structure that includes a well region and a semiconductor substrate. The well region is disposed within the semiconductor substrate. The well region includes a plurality of first regions separated by a plurality of second regions, where the plurality of first regions is of a first doping and the plurality of second regions are of a second doping different than the first doping. A gate electrode overlies the well region where the gate electrode is disposed laterally over a portion of the plurality of first regions and a portion of the plurality of second regions.

Abstract: The present disclosure provides a method and device for constructing an autism spectrum disorder (ASD) risk prediction model. The method includes: establishing a first data table and a second data table based on case information of a sample set, obtaining a first grouped table set and a second grouped table set according to a preset characteristic arrangement rule and marker grouping rule, training data based on a random forest machine learning algorithm, and importing test data to obtain a first best characteristic combination and a second characteristic combination; and obtaining a first model based on the first best characteristic combination, stratified sampling of the first data table, and the random forest machine learning algorithm, obtaining a second model based on the second best characteristic combination, stratified sampling of the second data table, and the random forest machine learning algorithm, and performing combination to construct an ASD risk prediction model.

Abstract: Semiconductor devices and methods of manufactured are presented in which a first redistribution structure is formed, semiconductor devices are bonded to the first redistribution structure, and the semiconductor devices are encapsulated in an encapsulant. First openings are formed within the encapsulant, such as along corners of the encapsulant, in order to help relieve stress and reduce cracks.

Abstract: The disclosure provides a digital-to-analog conversion device and an operation method thereof. The digital-to-analog conversion device includes a digital-to-analog conversion circuit and a slew rate enhancement circuit. The digital-to-analog conversion circuit is configured to convert a digital code into an analog voltage. An output terminal of the digital-to-analog conversion circuit outputs the analog voltage to a load circuit. A control terminal of the slew rate enhancement circuit is coupled to the digital-to-analog conversion circuit to receive a control voltage following the analog voltage. The slew rate enhancement circuit is coupled to the output terminal of the digital-to-analog conversion circuit. The slew rate enhancement circuit enhances the slew rate at the output terminal of the digital-to-analog conversion circuit based on the control voltage.

Abstract: Systems and methods are provided for predicting systematic design rule check (DRC) violations in a placement layout before routing is performed on the placement layout. A systematic DRC violation prediction system includes DRC violation prediction circuitry. The DRC violation prediction circuitry receives placement data associated with a placement layout. The DRC violation prediction circuitry inspects the placement data associated with the placement layout, and the placement data may include data associated with a plurality of regions of the placement layout, which may be inspected on a region-by-region basis. The DRC violation prediction circuitry predicts whether one or more systematic DRC violations would be present in the placement layout due to a subsequent routing of the placement layout.

Abstract: A semiconductor die includes an on-die power switch and a target device. The on-die power switch includes a plurality of power input nodes, a power output node, and a switch circuit. The power input nodes receive a plurality of operation voltages from a plurality of different power sources, respectively. The power output node outputs a target operation voltage selected from the operation voltages. The switch circuit selectively couples one of the power input nodes to the power output node. The target device operates according to the target operation voltage supplied from the on-die power switch. The on-die power switch and the target device are separate circuit blocks of the semiconductor die.

Abstract: A controller of a power conversion circuit, coupled to a smart power stage (SPS), controls SPS to convert an input voltage into an output voltage and provides an output current. The SPS provides a current monitoring signal to the controller. The controller includes a control loop, a sampling circuit and a current reconstruction circuit. The control loop is coupled to SPS and generates a pulse-width modulation (PWM) signal to control the operation of SPS. The sampling circuit is coupled to SPS and receives the current monitoring signal. The current monitoring signal is sampled according to PWM signal to obtain a calibration reference value. The current reconstruction circuit is coupled to the control loop and sampling circuit and generates a reconstructed current corresponding to actual output current. The reconstructed current is produced according to an input voltage, a reference voltage and PWM signal and calibrated using the calibration reference value.

Abstract: An integrated circuit with mixed poly pitch cells with a plurality of different pitch sizes is disclosed. The integrated circuit includes: at least a minimum unit each with at least a first number of first poly pitch cells with a first pitch size, and a second number of second poly pitch cells with a second pitch size, the first pitch size PP is different from the second pitch size PP1, the greatest common divisor of the first pitch size PP and the second pitch size PP1 is GCD, wherein GCD is an integer greater than 1; a gate length of the first pitch size is Lg; a gate length of the second pitch size is Lg1; Lg and Lg1 are capable of being extended to achieve G-bias for power and speed optimization of the minimum unit and the integrated circuit.

Abstract: An electronic device includes a fuel cell, a first switch, a rechargeable battery, a second switch, and a relay. The fuel cell provides a fuel voltage. The first switch provides the fuel voltage to a first node according to a first control signal. The rechargeable battery provides a battery voltage. The second switch is coupled to the first node and charges the rechargeable battery with the fuel voltage according to a second control signal. The relay provides a voltage of the first node to the load according to the third control signal.

Abstract: An imaging device may include an image sensor that generates frames of image data in response to incident light with an array of image pixels, and processing circuitry that processes the image data. The processing circuitry may include a transformation circuit that applies transforms to subsampled frames of image data that are generated using a subset of the image pixels to produce transform values, and a comparator circuit that compares the transform values. The processing circuitry may determine that motion has occurred between sequential frames if a difference between a first transform value corresponding to a first image frame and a second transform value corresponding to a second image frame exceeds a threshold value. In response to determining that motion has occurred, the image sensor may generate full-frame image data using all of the pixels of the array of image pixels.

Abstract: Disclosed is a molecule, e.g., a single-domain antibody, or a heavy chain only antibody, that specifically binds human PD-LI, and its use in treating diseases such as tumors.

Abstract: A semiconductor device includes a substrate having a first region and a second region. Multiple nanostructures are vertically stacked above the first region of the substrate. A first gate dielectric layer wraps each of the nanostructures. A first gate electrode layer is disposed on the first gate dielectric layer. A fin protruding from the second region of the substrate. The fin includes alternating first and second semiconductor layers with different material compositions. A second gate dielectric layer is disposed on top and sidewall surfaces of the fin. A second gate electrode layer is disposed on the second gate dielectric layer. A thickness of the first gate dielectric layer is smaller than a thickness of the second gate dielectric layer.

Abstract: A package comprises at least one first device die, and a redistribution line (RDL) structure having the at least one first device die bonded thereto. The RDL structure comprises a plurality of dielectric layers, and a plurality of RDLs formed through the plurality of dielectric layers. A trench is defined proximate to axial edges of the RDL structure through each of the plurality of dielectric layers. The trench prevents damage to portions of the RDL structure located axially inwards of the trench.