Abstract: A battery assembly is described that comprises at least one battery cell; an inner container; a compression apparatus for sealing the inner container; and an outer container containing the inner container and the compression apparatus.

Abstract: A method of forming a memory cell with a high aspect ratio metal via formed underneath a metal tunnel junction (MTJ) and the resulting device are provided. Embodiments include a device having a metal via formed underneath a metal tunnel junction (MTJ) in a memory cell, and the metal via has an aspect ratio smaller than 2.

Abstract: A foam roller includes a tube and a pad. The tube is made of an elastic material and formed with an external face and an internal face. The external face of the tube includes alternately arranged facets and angles. The pad is made of a relatively soft and elastic material and formed on the external face of the tube. The pad includes facets and angles corresponding to the facets and angles of the tube.

Abstract: A dual gate transistor circuit, a pixel circuit, and a gate drive circuit are provided. The dual gate transistor circuit includes a dual gate transistor, a first diode, and a second diode. The dual gate transistor has a first gate and a second gate, and the first gate receives a drive signal. The first diode is connected in series between the first gate and the second gate according to a first-polarity direction. The second diode is connected in series between the first gate and the second gate according to a second-polarity direction. The first-polarity direction is opposite to the second-polarity direction.

Abstract: A head-mounted device may have a display that displays content for a user. Head-mounted support structures in the device support the device on the head of the user. A non-removable lens system may be supported by the head-mounted support structures. The head-mounted support structures may be configured to receive a removable supplemental lens system. The removable supplemental lens system may be used to customize the head-mounted display to accommodate the user's vision. Information such as information on the optical characteristics of the removable supplemental lens system and the user's eyeglass prescription may be stored in the removable supplemental lens system using bar codes, text, programmable memory, or other data storage. When the removable supplemental lens system is installed in the head-mounted device, control circuitry in the head-mounted device may retrieve the stored information. A gaze tracker system or other sensors may be used in retrieving the stored information.

Abstract: A neural network system includes a doping well having a first conductivity, a memory string having a plurality of memory cells each include a gate and a source/drain with a second conductivity disposed in the doping well, a buried channel layer having the second conductivity and disposed in the doping well, a word line driver used to apply input voltages corresponding to a plurality of input variations of terms in the sum-of-products operations, a voltage sensing circuit used to apply a constant current into the memory string and to sensing a voltage, a controller used to program/read the memory cells for acquiring a plurality of threshold voltages corresponds to weights of the terms in the sum-of-products operations. When programming/reading the threshold voltages, a first bias voltage is applied to the first doping well; and when sensing the voltage, a second bias voltage is applied to the first doping well.

Abstract: Compounds, compositions and methods of use thereof are provided, the compounds comprising a hydrophobically modified polyelectrolyte comprising a nonionic monomer, an ionic monomer, a monomer having the structure of Formula 1, and a monomer having the structure of Formula 2, wherein R1, R2, R3, R5, R6, and R7 are independently hydrogen, unsubstituted alkyl, substituted alkyl, carbonyl, carboxyl, aryl, or alkaryl; R4 is linear C3 to C30 alkyl; R8 is branched C3 to C30 alkyl; X1 and X2 are independently —C(O)O—, —C(O)NR9—, —O—, —C(R9)2O—, -arylene-, -arylene-C(R9)2O—, -arylene-C(R9)2N(R10)— or -arylene-C(R9)2N+(R10)2—; R9 and R10 is independently hydrogen or a C1 to C4 alkyl; and wherein a molar ratio of the monomer of Formula 1 to the monomer of Formula 2 is from about 1.5:1 to about 15:1. The compounds are useful as viscosifying agents in oil and gas applications.

Abstract: A semiconductor device includes a drain region for a transistor, a drain active area directly below the drain region, a drift area directly below an insolation structure, and an accumulation area directly below a gate structure of the transistor. The semiconductor device includes a first selectively doped implant region of a first concentration of a first conductivity type extending to a first depth. The first selectively doped implant region is located in the drift area, the drain active area, and the accumulation area. The semiconductor device includes a second selectively doped implant region of a second concentration of the first conductivity type and extending to a second depth less than the first depth. The second concentration is less than the first concentration. The second selectively doped implant region is located the drain active area, but not in the accumulation area.

Abstract: A dimming switch system (130). The system (130) may include a dimming switch (520), a weak current module (510) and a strong current module (530). The weak current module (510) may receive at least one drive signal and control a state of the dimming switch (520) based on the drive signal. The strong current module (530) may be connected to the dimming switch (520) and at least one lighting device (140). The strong current module (530) may control brightness of the lighting device (140) connected thereto based on the state of the dimming switch (520). The dimming switch (520) may include a phase-cutting switch (610) and at least one omnidirectional conduction unit (620). When the omnidirectional conduction unit (620) works, the dimming switch (520) is omnidirectionally conductive.

Abstract: Disclosed is a sliding door or window. The sliding door or window includes a door/window frame, a swing fastening mechanism is disposed at a lower end of a side of the door/window frame, and a locking structure is mounted on an upper end of the side of the door/window frame. The swing fastening mechanism and the locking structure are each provided with a snakelike groove inside which a shaft operative to slide along a groove orientation is arranged. A handle disposed on the door/window frame is operative to drive the shaft to slide in the snakelike groove, thereby forcing the swing fastening mechanism or/and the locking structure to swing.

Abstract: An antenna structure serving as a radar emitter with extended long range function comprises a radiating element comprised of radiating units connected in series by a feeder. Each two adjacent radiating units are spaced apart from each other by a specified distance. Lengths of the radiating units are same, and width of the radiating units gradually decreases from a center to ends. The feeder transmits a current signal to the radiating element. The radiating element emits a radar beam based on the current signal.

Abstract: An optical member driving mechanism for driving an optical member having an optical axis is provided, including a fixed portion, a movable portion, a first elastic member, and a driving assembly. The movable portion is configured to hold the optical member, and is movably connected the fixed portion via the first elastic member. The driving assembly drives the movable portion to move along the optical axis within a range of motion. The range of motion includes a first limit moving range and a second limit moving range. The first limit moving range is the maximum distance that the movable portion can move toward the light-entering side, and the second limit moving range is the maximum distance that the movable portion can move toward the light-emitting side. When the movable portion is in a predetermined position, the first limit moving range is greater than the second limit moving range.

Abstract: The present disclosure provides an information transmitting device for optical communication, an optical communication method and an optical communication system. The information transmitting device includes: a distance sensor, configured to detect a distance from the information transmitting device to an information receiving device; a light emitting element, configured to issue an optical signal to the information receiving device, the optical signal including an optical communication information; a controller electrically coupled to the distance sensor and the light emitting element respectively, configured to adjust a light emitting mode of the light emitting element according to the distance detected, so that an intensity of the optical signal received by a light sensor of the information receiving device is greater than or equal to a start-up light intensity of the light sensor, thereby the light sensor can sense the optical signal at a rated resolution.

Abstract: A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region; forming a first fin-shaped structure on the first region; removing part of the first fin-shaped structure to form a first trench; forming a dielectric layer in the first trench, wherein the dielectric layer comprises silicon oxycarbonitride (SiOCN); and planarizing the dielectric layer to form a first single diffusion break (SDB) structure.

Abstract: A semiconductor test device for measuring a contact resistance includes: first fin structures, upper portions of the first fin structures protruding from an isolation insulating layer; epitaxial layers formed on the upper portions of the first fin structures, respectively; first conductive layers formed on the epitaxial layers, respectively; a first contact layer disposed on the first conductive layers at a first point; a second contact layer disposed on the first conductive layers at a second point apart from the first point; a first pad coupled to the first contact layer via a first wiring; and a second pad coupled to the second contact layer via a second wiring. The semiconductor test device is configured to measure the contact resistance between the first contact layer and the first fin structures by applying a current between the first pad and the second pad.

Abstract: The present invention relates to a use of Discoidin Domain Receptor 1 (DDR1) inhibitor in preparing a medicament for preventing or treating a joint disease. The present invention further relates to a use of DDR1 activator in preparing a medicament for preventing or treating abnormalities of endochondral ossification-related conditions.

Abstract: An elastic physiological patch includes a patch assembly and an implant assembly. The patch assembly includes an electronic device, and a soft patch body defining a chamber for receiving the electronic device. The implant assembly is mountable to the electronic device and includes an implant which is capable of being driven to partially pass through the patch body and which is adapted to be implanted in the skin of a subject. The implant and the patch body cooperatively seal the chamber.

Abstract: A facility for adapting the prediction of ink is described. In some examples, the facility receives information about a spatial movement by a user. On the basis of the received information, the facility predicts future spatial movement by the user, and generates an ink stroke that reflects both the spatial movement described by the received information and at least a portion of the predicted future spatial movement. The facility enforces against the generated ink stroke a limit that has the effect of controlling the area of a portion of the ink stroke corresponding to the at least a portion of the predicted future spatial movement, and causes the generated ink stroke, subject to the enforcement of the limit, to be displayed.

Abstract: A semiconductor structure includes a semiconductor substrate, a gate structure, a first gate spacer, an interlayer dielectric layer, a contact stop layer, and an air gap. The gate structure is disposed over the semiconductor substrate. The first gate spacer covers a first sidewall of the gate structure. The interlayer dielectric layer is adjacent to the first gate spacer. The contact stop layer is positioned over the first gate spacer and the interlayer dielectric layer. The air gap is between the first gate spacer and the interlayer dielectric layer. The contact stop layer includes a capping portion that seals a top of the air gap.

Abstract: A method includes dispensing sacrificial region over a carrier, and forming a metal post over the carrier. The metal post overlaps at least a portion of the sacrificial region. The method further includes encapsulating the metal post and the sacrificial region in an encapsulating material, demounting the metal post, the sacrificial region, and the encapsulating material from the carrier, and removing at least a portion of the sacrificial region to form a recess extending from a surface level of the encapsulating material into the encapsulating material.