Abstract: In various examples, a technique for securely transmitting CAN (Controller Area Network) messages is disclosed that includes receiving, using a cryptographic engine, a message from an application to be transmitted over a CAN (Controller Area Network) bus, wherein the cryptographic engine executes a secure firmware and is implemented on an on-die discrete processor. The technique further includes accessing, using the secure firmware, a key from a plurality of keys associated with an authentication process from a secure memory associated with the cryptographic engine. Additionally, the technique includes computing an authentication tag using the key and the message and transmitting the message with the authentication tag over the CAN bus to a destination address.

Abstract: A semiconductor device includes a single diffusion break (SDB) structure dividing a fin-shaped structure into a first portion and a second portion, an isolation structure on the SDB structure, a first spacer adjacent to the isolation structure, a metal gate adjacent to the isolation structure, a shallow trench isolation (STI around the fin-shaped structure, and a second isolation structure on the STI. Preferably, a top surface of the first spacer is lower than a top surface of the isolation structure and a bottom surface of the first spacer is lower than a bottom surface of the metal gate.

Abstract: An antenna structure includes a main ground element, an extension ground element, a feeding radiation element, a first radiation element, a second radiation element, a shorting radiation element, a third radiation element, and a dielectric substrate. The extension ground element is coupled to the main ground element. A notch region is defined by the main ground element and the extension ground element. The feeding radiation element has a feeding point. The first radiation element is coupled to the feeding radiation element. The second radiation element is coupled to the feeding radiation element. The second radiation element and the first radiation element substantially extend in opposite directions. The feeding radiation element is also coupled through the shorting radiation element to the extension ground element. The third radiation element is coupled to the main ground element.

Abstract: Embodiments disclosed herein include apparatuses with glass core package substrates. In an embodiment, an apparatus comprises a substrate with a first surface and a second surface opposite from the first surface. A sidewall is between the first surface and the second surface, and the substrate comprises a glass layer. In an embodiment, a via is provided through the substrate between the first surface and the second surface, and the via is electrically conductive. In an embodiment, a layer in contact with the sidewall of the substrate surrounds a perimeter of the substrate.

Abstract: Systems and methods are disclosed for converting natural language queries to a query instruction set for searching a data warehouse. To generate a query instruction set from a natural language query, a system iteratively uses a generative artificial intelligence (AI) model and database query tools to generate a query instruction set in a stepwise manner. The system and generative AI model do not require a priori knowledge of data table contents in the data warehouse, which may include sensitive information. In addition, the system does not require access to the data warehouse to generate the query instruction set. Instead, the system is implemented to use structure information from the data warehouse, including table lists (such as table names) and table format information (such as column names) of tables in the data warehouse, and the generative AI model is a generally trained model to generate the query instruction set.

Abstract: Embodiments of this specification provide signature authentication methods and apparatuses. A service private key for signature authentication is embedded in a trusted execution environment (TEE) of a terminal device in which a client device is located. In an implementation, a method includes the following. The client device sends a signature authentication request to a server. The client device receives authentication data information sent from the server. The client device encrypts the authentication data information by using a key that is pre-synchronized with the TEE. The client device sends encrypted authentication data information to the TEE. The client device then receives the signature data sent from the TEE and sends the signature data to the server.

Abstract: A method includes depositing a first work function layer over a first and second gate trench. The method includes depositing a second work function layer over the first work function layer. The method includes etching the second work function layer in the first gate trench while covering the second work function layer in the second gate trench, causing the first work function layer in the first gate trench to contain metal dopants that are left from the second work function layer etched in the first gate trench. The method includes forming a first active gate structure and second active gate structure, which include the first work function layer and the metal dopants left from the second work function layer in the first gate trench, and the first work function layer and no metal dopants left behind from the second work function layer, respectively.

Abstract: A method of forming source/drain regions of semiconductor devices is disclosed. The method includes forming a fin structure on a substrate, forming a polysilicon structure on the fin structure, removing a portion of the fin structure adjacent to the polysilicon structure to form an opening, and forming a S/D region in the opening. The forming the S/D region includes exposing the fin structure in the opening to a first flow rate of a precursor gas during a first phase of a gas flow cycle, a second flow rate of the precursor gas during a second phase of the gas flow cycle. The exposing the fin structure in the opening to the precursor gas, the etching gas, and the plasma is performed in an in-situ process.

Abstract: Disclosed are a crystalline form or an amorphous form of a macrocyclic compound or a salt or solvate thereof, as well as a preparation method therefor and an application thereof. The structure of the macrocyclic compound is represented by formula I.

Abstract: Disclosed are examples related to PCB impedance tuning for wideband operation and acceptance of antenna variation. In one example, a tire monitoring device includes a sensor, RFID circuitry and processing circuitry mounted on a PCB. The RFID circuitry can harvest energy and transmit monitored tire data in response to a received interrogation signal. The RFID circuitry can be tuned to receive interrogation signals in a frequency band from at least 868 MHz to at least 915 MHz to cover both NA and EU applications. Impedance matching of the RFID circuitry can enable operation independent of variations in coil antenna length. In another example, comprises the tire monitoring device and a RFID reader or interrogator.

Abstract: A connecting device used for electrically connecting a power source with a power consuming module is provided. The connecting device includes a female connecting base and a male connecting base. The female connecting base has two opposite surfaces, a rim disposed on one of the surfaces and two terminals exposed on the surfaces. The terminals are connected to the live wire and neutral wire of the power source separately. The male connecting base includes a clamp, two conductive strips, and a ground strip. The rim is clamped, and the male connecting base is fastened to the female connecting base by the clamp. The terminals are connected to the conductive strips, while the end surface of each conductive strip protrudes from the surface of the male connecting base. The ground strip includes a ground surface which protrudes from the end surfaces of the conductive strips.

Abstract: A method performed by a User Equipment (UE) for Layer 1/Layer 2 Triggered Mobility (LTM) is provided. The method receives, from a source cell, a Cell Switch Command (CSC) Medium Access Control (MAC) Control Element (CE), the CSC MAC CE indicating a target cell, Timing Advance (TA) information, and a Transmission Configuration Indicator (TCI) state. The method determines whether the TA information is valid. In a case that the TA information is valid, the method determines a pathloss based on a pathloss reference signal associated with the TCI state. In a case that the TA information is not valid, the method determines whether the CSC MAC CE includes Contention-Free Random Access (CFRA) information, and then determines the pathloss based on a Synchronized Signal Block (SSB) indicated in the CFRA information in a case that the CSC MAC CE includes the CFRA information.

Abstract: A low strain transfer protective layer is formed on a transition metal dichalcogenide (TMD) monolayer to enable the transfer of the TMD monolayer from a growth substrate to a target substrate with little or no strain-induced damage to the TMD monolayer. Transfer of a TMD monolayer from a growth substrate to a target substrate comprises two transfers, a first transfer from the growth substrate to a carrier wafer and a second transfer from the carrier wafer to the target substrate. Transfer of the TMD monolayer from the growth substrate to the carrier wafer comprises mechanically lifting off the TMD monolayer from the growth substrate. The low strain transfer protective layer can limit the amount of strain transferred from the carrier wafer to the TMD monolayer during lift-off. The carrier wafer and protective layer are separated from the TMD monolayer after attachment of the TMD monolayer to the target substrate.

Abstract: A key structure comprising an upper and lower key stem, a rotatable middle key stem including a magnetized element disposed therein, the rotatable middle key stem coupled between and in axial alignment with the upper and lower key stems, and a magnetic field generator configured to steer a magnetic field through the magnetized element of the rotatable middle key stem. The rotatable middle key stem is operable to be longitudinally rotatable between a first and second position, while the upper and lower key stems are rotationally fixed. The generated magnetic field, when at a first setting, applies a first magnetic force on the magnetized element causing the middle key stem to rotate to the first position, and when at a second setting, applies a second magnetic force on the magnetized element causing the middle key stem to rotate to the second position.

Abstract: A method of manufacturing a device includes bonding a first die and a second die to a first side of a substrate, forming a stress buffer structure over the first die and the second die, where the stress buffer structure includes a first portion of a first via extending through a first insulating layer, a second portion of the first via extending through a second insulating layer, and a third portion of the first via extending through a third insulating layer, where the second portion of the first via is disposed between the first portion of the first via and the third portion of the first via, and where a diameter of the second portion of the first via is smaller than diameters of the first portion of the first via and the third portion of the first via, and depositing a metal layer over the stress buffer structure.

Abstract: Trench contact structures with etch stop layers, and methods of fabricating trench contact structures with etch-stop layers, are described. In an example, an integrated circuit structure includes a fin structure. An epitaxial source or drain structure is on the fin structure. An isolation structure is laterally adjacent to sides of the fin structure. A dielectric layer is on at least a portion of a top surface of the isolation structure and partially surrounds the epitaxial source or drain structure and leaves an exposed portion of the epitaxial source or drain structure. A conductive trench contact structure is on the exposed portion of the epitaxial source or drain structure. The conductive trench contact structure does not extend into the isolation structure.

Abstract: Aspects described herein provide for methods and apparatus for interpretation of borehole sonic dispersion data using data-driven machine learning based approaches. Training datasets are generated from two possible sources. First, application of machine learning enabled automatic dipole interpretation (MLADI) and/or machine learning enabled automatic quadrupole interpretation (MLAQI) methods on field data processing will naturally create substantial volume of labeled data, i.e., pairing dispersion data with dispersion modes labeled by MLADI and MLAQI. Second, it is also possible to generate large volume of synthetic dispersion data from known model parameters. These two types of labeled data can be used either separately or in combination to train neural network models. These models can map dispersion data to modal dispersion much more efficiently.

Abstract: A method of forming a semiconductor structure, includes forming a fin structure over a substrate in a Z-direction; forming a dummy gate structure extending in a Y-direction and over the fin structure; and forming gate spacers on sidewalls of the dummy gate structure. The fin structure includes first semiconductor layers and second semiconductor layers alternately stacked. The method further includes removing a portion of the dummy gate structure to form a first trench that exposes upper portions of the gate spacers; forming an insulating material in the first trench; partially removing the insulating material to form insulating layers on sidewalls of the upper portions of the gate spacers; removing a remaining portion of the dummy gate structure to expose lower portions of the gate spacers; and partially etching the lower portions of the gate spacers.

Abstract: Various embodiments of the present application are directed towards an integrated chip (IC). The IC comprises a trench capacitor overlying a substrate. The trench capacitor comprises a plurality of capacitor electrode structures, a plurality of warping reduction structures, and a plurality of capacitor dielectric structures. The plurality of capacitor electrode structures, the plurality of warping reduction structures, and the plurality of capacitor dielectric structures are alternatingly stacked and define a trench segment that extends vertically into the substrate. The plurality of capacitor electrode structures comprise a metal component and a nitrogen component. The plurality of warping reduction structures comprise the metal component, the nitrogen component, and an oxygen component.

Abstract: A display apparatus is provided. The display apparatus includes a display module and multiple light-emitting driving circuits. Each of the light-emitting driving circuits includes a timing control circuit and a driving circuit. The timing control circuit receives multiple clock signals and a previous light-emitting timing signal to provide a light-emitting timing signal and an internal voltage. The driving circuit receives a first phase signal among multiple phase signals and the internal voltage to provide a light-emitting driving signal to the display module based on the first phase signal and the internal voltage. The phase signals all present disabled levels during a vertical blank period.