Patents by Inventor A. M. Choukh

A. M. Choukh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5753131
    Abstract: A magnetoresistive device with suppressed Barkhausen noise for restraining a cross-talk from adjacent tracks recorded on a magnetic medium, and a manufacturing method thereof. The width of the middle portion of a detection area in a magnetoresistive layer is thicker than that of shoulder portions. In the magnetoresistive device, the shoulder portions, which perform exchange coupling with the antiferromagnetic exchange layer, show a weak reaction to external magnetic field due to the high coercive force of the shoulder portions and a smaller thickness of the magnetoresistive layer than that of the detection area. Thus, when information on any one track of an information medium is read out through the detection area, the shoulder portions only slightly react to the external magnetic field of the adjacent tracks, i.e., the affect on the detection area by the shoulder portions is minimized.
    Type: Grant
    Filed: February 18, 1997
    Date of Patent: May 19, 1998
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Alexandre M. Choukh, In-eung Kim
  • Patent number: 5748414
    Abstract: A magnetoresistive (MR) element assembly with a longitudinal bias comprising a MR element, a bias coil, and spaced conductor leads is disclosed. The MR element is formed into an elongated ellipse-like shape with an elongated sense region and two end regions separated by a small nonmagnetic gap thereby reducing the longitudinal demagnetization field within the MR element. An easy axis of magnetization is formed by the MR element and oriented in a direction parallel to the main axis of the element. A bias coil is disposed about the MR element to produce a longitudinal bias field sufficient to maintain the elongated sense region in a single domain state. The elongated ellipse-like shaped MR element features a uniformly reduced demagnetization field for inhibiting the formation of a multi-domain state within the elongated sense region. The MR element assembly thus improves sensitivity of the MR head and suppresses Barkhausen noise in the output of the head.
    Type: Grant
    Filed: July 23, 1996
    Date of Patent: May 5, 1998
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: In Eung Kim, A. M. Choukh
  • Patent number: 5703738
    Abstract: A magneto-resistive (MR) element of a thin-film magnetic head comprises a three-layer structure. The three-layer structure comprises a layer of soft magnetic material, a thin non-magnetic decoupling layer and an MR layer, and has an ellipse-like C-shape with a gap in its back passive region. The axis of easy magnetization of the MR layer is parallel to the main axis of the ellipse-like C-shape three-layered structure. The MR layer is longitudinally biased by an exchange bias field developed by exchange coupling between the antiferromagnetic layer and the MR layer. The antiferromagnetic layer is deposited in direct contact only in the back passive region of the MR layer of a level sufficient to maintain that region of the MR layer in a linear response mode. Spaced conductor leads are connected directly to the MR layer within the front active region to define a detection region, and through the antiferromagnetic layer in the back passive region.
    Type: Grant
    Filed: June 7, 1995
    Date of Patent: December 30, 1997
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: In-eung Kim, Alexandre M. Choukh