Abstract: Present invention discloses a high strength hot rolled steel product with tensile strength at least 1100 MPa and elongation not less than 21%. The steel further has uniform elongation not less than 10% and yield and tensile ratio 0.6-0.7. The steel further has tensile toughness in the range 19-23.5 GPa %. The developed steel is primarily aimed for automotive structural applications and also for many other such as defence where good combination of strength and ductility required is very high. The developed steel product has following composition C: 0.15-0.23, Mn: 0.8-2.1, Si: 0.3-1.1, Cr: 0.8-1.3, Mo: 0.08-0.25, Nb: 0.018-0.035, Ti—0.01-0.1 S—0.008 max, P—0.025 max, Al—0.05 to 0.3, N—0.005 max. The liquid metal was continuous cast into slab casting. The cast slab was soaked above 1150° C. for few hours and subsequently the cast structure was broken by deformation prior to hot rolling.

Abstract: Present invention discloses a high strength hot rolled steel product with tensile strength at least 1100 MPa and elongation not less than 21%. The steel further has uniform elongation not less than 10% and yield and tensile ratio 0.6-0.7. The steel further has tensile toughness in the range 19-23.5 GPa %. The developed steel is primarily aimed for automotive structural applications and also for many other such as defence where good combination of strength and ductility required is very high. The developed steel product has following composition C: 0.15-0.23, Mn: 0.8-2.1, Si: 0.3-1.1, Cr: 0.8-1.3, Mo: 0.08-0.25, Nb: 0.018-0.035, Ti—0.01-0.1 S—0.008 max, P—0.025 max, Al—0.05 to 0.3, N—0.005 max. The liquid metal was continuous cast into slab casting. The cast slab was soaked above 1150° C. for few hours and subsequently the cast structure was broken by deformation prior to hot rolling.

Abstract: A method includes forming a hardmask over one or more gate structures. The method further includes forming a photoresist over the hardmask. The method further includes forming an opening in the photoresist over at least one of the gate structures. The method further includes stripping the hardmask that is exposed in the opening and which is over the at least one of the gate structures. The method further includes removing the photoresist. The method further includes providing a halo implant on a side of the least one of the at least one of the gate structures.

Abstract: A method includes forming a hardmask over one or more gate structures. The method further includes forming a photoresist over the hardmask. The method further includes forming an opening in the photoresist over at least one of the gate structures. The method further includes stripping the hardmask that is exposed in the opening and which is over the at least one of the gate structures. The method further includes removing the photoresist. The method further includes providing a halo implant on a side of the least one of the at least one of the gate structures.

Abstract: a method comprises forming a hardmask over one or more gate structures. The method further comprises forming a photoresist over the hardmask. The method further comprises forming an opening in the photoresist over at least one of the gate structures. The method further comprises stripping the hardmask that is exposed in the opening and which is over the at least one of the gate structures. The method further comprises removing the photoresist. The method further comprises providing a halo implant on a side of the at least one of the gate structures.

Abstract: a method comprises forming a hardmask over one or more gate structures. The method further comprises forming a photoresist over the hardmask. The method further comprises forming an opening in the photoresist over at least one of the gate structures. The method further comprises stripping the hardmask that is exposed in the opening and which is over the at least one of the gate structures. The method further comprises removing the photoresist. The method further comprises providing a halo implant on a side of the least one of the at least one of the gate structures.