Patents by Inventor A. Pechnikov

A. Pechnikov has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Manufacturing methods for semiconductor devices with multiple III-V material layers
    Patent number: 6955719
    Abstract: A method for fabricating semiconductor devices with thin (e.g., submicron) and/or thick (e.g., between 1 micron and 100 microns thick) Group III nitride layers during a single epitaxial run is provided, the layers exhibiting sharp layer-to-layer interfaces. According to one aspect, an HVPE reactor is provided that includes one or more gas inlet tubes adjacent to the growth zone, thus allowing fine control of the delivery of reactive gases to the substrate surface. According to another aspect, an HVPE reactor is provided that includes at least one growth zone as well as a growth interruption zone. According to another aspect, an HVPE reactor is provided that includes extended growth sources such as slow growth rate gallium source with a reduced gallium surface area. According to another aspect, an HVPE reactor is provided that includes multiple sources of the same material, for example Mg, which can be used sequentially to prolong a growth cycle.
    Type: Grant
    Filed: July 18, 2003
    Date of Patent: October 18, 2005
    Assignee: Technologies and Devices, Inc.
    Inventors: Vladimir A. Dmitriev, Denis V. Tsvetkov, Aleksei Pechnikov, Yuri V. Melnik, Aleksandr Usikov, Oleg Kovalenkov
  • Manufacturing methods for semiconductor devices with multiple III-V material layers
    Publication number: 20040137657
    Abstract: A method for fabricating semiconductor devices with thin (e.g., submicron) and/or thick (e.g., between 1 micron and 100 microns thick) Group III nitride layers during a single epitaxial run is provided, the layers exhibiting sharp layer-to-layer interfaces. According to one aspect, an HVPE reactor is provided that includes one or more gas inlet tubes adjacent to the growth zone, thus allowing fine control of the delivery of reactive gases to the substrate surface. According to another aspect, an HVPE reactor is provided that includes at least one growth zone as well as a growth interruption zone. According to another aspect, an HVPE reactor is provided that includes extended growth sources such as slow growth rate gallium source with a reduced gallium surface area. According to another aspect, an HVPE reactor is provided that includes multiple sources of the same material, for example Mg, which can be used sequentially to prolong a growth cycle.
    Type: Application
    Filed: July 18, 2003
    Publication date: July 15, 2004
    Inventors: Vladimir A. Dmitriev, Denis V. Tsvetkov, A. Pechnikov, Yuri V. Melnik, A. Usikov, O. Kovalenkov