Abstract: The invention relates to a method of preparing a composite or porous composite used as a biodegradable scaffold, the composite prepared therefrom and the use of the composite. In particular, the composite is a calcium sulfate-polylactic acid composite or porous composite and the composite can be especially used as an in situ pore forming scaffold.

Abstract: A touch module including an image sensing unit, a plurality of first reflecting elements, a plurality of second reflecting elements, and a processing unit is provided. The image sensing unit is positioned in correspondence with a first corner of a sensing area and capable of capturing a sensing image to output an image signal. The first reflecting elements and the second reflecting elements respectively have different first angles and different second angles, are disposed along a first and the second edges of the sensing area respectively, and are capable of reflecting a touch object to form a first and a second image in the sensing image. A second corner formed by the first the second edges is diagonal to the first corner. The processing unit is coupled the image sensing unit and receives the image signal to determine the position of the touch object relative to the sensing area.

Abstract: An light apparatus used in forming a solar cell includes a housing separate from other processing in a deposition processing system, a transport mechanism for carrying a solar cell into the housing after deposition of a front contact layer in the deposition processing system, and one or more light source elements arranged to apply light on the solar cell after deposition of the front contact layer. A method of making a solar cell includes forming a back contact layer on a glass substrate, forming an absorber layer on the back contact layer, forming a buffer layer on the absorber layer, and forming a front contact layer above the buffer layer, the glass substrate, back contact layer, absorber layer, buffer layer, and front contact layer forming a first module. The method includes applying a light source to the first module after forming the front contact layer separate from other processing.

Abstract: A silicon-oxide-nitride-oxide-silicon (SONOS) device is disclosed. The SONOS device includes a substrate; a first oxide layer on the substrate; a silicon-rich trapping layer on the first oxide layer; a nitrogen-containing layer on the silicon-rich trapping layer; a silicon-rich oxide layer on the nitrogen-containing layer; and a polysilicon layer on the silicon-rich oxide layer.

Abstract: An LED light string with open circuit protection has a first end for receiving a first voltage, a second end for receiving a second voltage, and multiple LED units connected in series between the first end and the second end. Each of the LED units has multiple LEDs and at least one by-pass resistor connected in parallel. Even when the LEDs of the same LED unit all fail, a current from the first end to the second end can still flow through all the LED units via the by-pass resistors to drive the remaining normal LED units.

Abstract: The present disclosure includes a method for control of a film composition with co-sputter physical vapor deposition. In one implementation, the method includes: positioning first and second PVD guns above a substrate, selecting first and second collimators having first and second sets of physical characteristics, positioning the first and second collimators between the first and second PVD guns and the substrate, sputtering at least one material from the first and second PVD guns through the first and second collimators upon application of a first power and second power, wherein the first PVD gun has a first deposition rate from the first collimator at the first power, and the second PVD gun has a second deposition rate from the second collimator at the second power.

Abstract: A nonvolatile memory element is disclosed comprising a first electrode, a near-stoichiometric metal oxide memory layer having bistable resistance, and a second electrode in contact with the near-stoichiometric metal oxide memory layer. At least one electrode is a resistive electrode comprising a sub-stoichiometric transition metal nitride or oxynitride, and has a resistivity between 0.1 and 10 ?cm. The resistive electrode provides the functionality of an embedded current-limiting resistor and also serves as a source and sink of oxygen vacancies for setting and resetting the resistance state of the metal oxide layer. Novel fabrication methods for the second electrode are also disclosed.

Abstract: An antenna positioning device includes a mast, a height measuring device, a distance measuring device, a controller, a power device, an elevator and an antenna fixed on the elevator. The height measuring device measures a height of test equipment. The distance measuring device measures a distance between the center of the antenna and the test equipment. The controller calculates a coverage width of the antenna, and controls the power device to drive the elevator to move along the mast until the antenna is located at a half of the height of the test equipment if the coverage width is greater than or equal to the height of the test equipment, and control the power device to drive the elevator to move along the mast until the antenna is located at the top of the test equipment if the coverage width is less than the height of the test equipment.

Abstract: The present invention provides a fluid dispensing apparatus and a method of manufacturing a fluid dispensing apparatus.

Abstract: An electronic device and a method for starting the electronic device through a remote control are disclosed. In the method, a processing circuit is set into a low power state, and whether a remote control data is received is detected. The remote control data received is compared with the pre-determined logic value, and the processing circuit is powered on when the remote control data is equal to the pre-determined logic value.

Abstract: A method for starting an electronic system through CEC is disclosed, in which the electronic system includes a power management controller and a processing circuit controlled by the power management controller. In the method, a CEC bus which is electrically connected to the power management controller is detected, and a CEC data transmitted from the CEC bus is compared with a pre-determined logic value. After that, the processing circuit is powered on when the CEC data is equal to the pre-determined logic value.

Abstract: A stacked chip system is provided to comprise a first chip, a second chip, a first group of through silicon vias (TSVs) connecting the first chip and second chip and comprising at least one first VSS TSV, at least one first VDD TSV, a plurality of first signal TSVs and at least one first redundant TSV and a second group of through silicon vias (TSVs) connecting the first chip and second chip and comprising at least one second VSS TSV, at least one second VDD TSV, a plurality of second signal TSVs and at least one second redundant TSV, wherein all the first group of TSVs are coupled by a first selection circuitry configured to select the at least one first redundant TSV and bypass at least one of the rest of the first group of TSVs, and wherein the at least one first redundant TSV and the at least second redundant TSV are coupled by a second selection circuitry configured to allow one of them to replace the other.

Abstract: An LED light string with open circuit protection has a first end for receiving a first voltage, a second end for receiving a second voltage, and multiple LED units connected in series between the first end and the second end. Each of the LED units has multiple LEDs and at least one by-pass resistor connected in parallel. Even when the LEDs of the same LED unit all fail, a current from the first end to the second end can still flow through all the LED units via the by-pass resistors to drive the remaining normal LED units.

Abstract: A system and method for integrated circuits with surrounding gate structures are disclosed. The integrated circuits system includes a transistor having a gate all around cylindrical (GAAC) nanowire channel with an interposed dielectric layer. The cylindrical nanowire channel being in a middle section of a semiconductor wire pattern connects the source and drain region positioned at the two opposite end sections of the same wire pattern.

Abstract: A method of surface treatment for zirconium oxide implants and the etching formula for the same are disclosed. The processes are carried out at room temperature. The average surface roughness Ra and the standard deviation of the implant are measured showing significant improvement while comparing with the un-treated sample and the hydrofluoric acid treated samples. The average contact angle is provided showing an almost hydrophilic surface after etched by the formula according to the present invention.

Abstract: A readout device is adapted for dual-band sensing, and includes an amplifier, two direct injection (DI) readout circuits to be respectively connected to two sensors, and a switching module. Through operation of the switching module, one of the DI readout circuits can be electrically connected to the amplifier, and cooperate with the other DI readout circuit to achieve a dual-band sensing feature.

Abstract: A holding device for holding test antennas includes a base, a sliding plate, a holding pole, and a support block. The sliding plate is slidably mounted on the base. The holding pole is fixed on the sliding plate, and a length of the holding pole is adjustable. The support block is fixed on the holding pole and configured for receiving the test antennas. The holding pole and the sliding plate change a position of the support block along a first axis and a second axis, respectively.

Abstract: A nonvolatile memory element is disclosed comprising a first electrode, a near-stoichiometric metal oxide memory layer having bistable resistance, and a second electrode in contact with the near-stoichiometric metal oxide memory layer. At least one electrode is a resistive electrode comprising a sub-stoichiometric transition metal nitride or oxynitride, and has a resistivity between 0.1 and 10 ?cm. The resistive electrode provides the functionality of an embedded current-limiting resistor and also serves as a source and sink of oxygen vacancies for setting and resetting the resistance state of the metal oxide layer. Novel fabrication methods for the second electrode are also disclosed.

Abstract: A method for fabricating a through-silicon via comprises the following steps. Provide a substrate. Form a through silicon hole in the substrate having a diameter of at least 1 ?m and a depth of at least 5 ?m. Perform a first chemical vapor deposition process with a first etching/deposition ratio to form a dielectric layer lining the bottom and sidewall of the through silicon hole and the top surface of the substrate. Perform a shape redressing treatment with a second etching/deposition ratio to change the profile of the dielectric layer. Repeat the first chemical vapor deposition process and the shape redressing treatment at least once until the thickness of the dielectric layer reaches to a predetermined value.

Abstract: An air cushion pad includes at least two sheet members, which are made of resilient materials. Each sheet member forms a plurality of hollow tubes projecting therefrom and the tubes are connected to each other by a substantially flat plate. The tubes of one sheet member and the tubes of the other sheet member are alternately fit to each other in an opposing manner to form the air cushion pad. When an external impact force is applied in a top down manner, the air cushion pad absorbs the impact force and undergoes sideways deformation so as to convert the impact force into a transverse to thereby realize shock absorption and eliminate damage caused by downward action of the impact force to provide the function of protection.