Patents by Inventor Aaditya Mahajan

Aaditya Mahajan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7148463
    Abstract: A photodetector includes a high-indium-concentration (H-I-C) absorption layer having a Group III sublattice indium concentration greater than 53%. The H-I-C absorption layer improves responsivity without decreasing bandwidth. The photoconversion structure that includes the H-I-C absorption layer can be formed on any type of substrate through the use of a metamorphic buffer layer to provide a lattice constant gradient between the photoconversion structure and the substrate. The responsivity of the photodetector can be further improved by passing an incoming optical signal through the H-I-C absorption layer at least twice.
    Type: Grant
    Filed: July 16, 2003
    Date of Patent: December 12, 2006
    Assignee: TriQuint Semiconductor, Inc.
    Inventors: Aaditya Mahajan, Edward A. Beam, III, Jose L. Jiminez, Andrew A. Ketterson
  • Publication number: 20050012030
    Abstract: A photodetector includes a high-indium-concentration (H-I-C) absorption layer having a Group III sublattice indium concentration greater than 53%. The H-I-C absorption layer improves responsivity without decreasing bandwidth. The photoconversion structure that includes the H-I-C absorption layer can be formed on any type of substrate through the use of a metamorphic buffer layer to provide a lattice constant gradient between the photoconversion structure and the substrate. The responsivity of the photodetector can be further improved by passing an incoming optical signal through the H-I-C absorption layer at least twice.
    Type: Application
    Filed: July 16, 2003
    Publication date: January 20, 2005
    Inventors: Aaditya Mahajan, Edward Beam, Jose Jiminez, Andrew Ketterson