Abstract: Embodiments of the disclosure are directed to an integrated circuit (IC) that includes a transistor, a dielectric region and an etch stop material. A portion of the etch stop material is between a portion of the dielectric region and a portion of a gate spacer material of the transistor. The etch stop material is soluble responsive to an etch stop removal material selected from the group consisting of water and an acid.

Abstract: Forming a hardmask layer for reactive ion etching includes depositing a hardmask above an underlayer. The hardmask includes a layer of magnesium oxide having a thickness of up to 10 nm. A resist layer is deposited above the hardmask and developed to form a pattern that exposes portions of the hardmask. The pattern is transferred from the resist layer to the hardmask by rinsing exposed portions of the hardmask with a deionized water solution.

Abstract: Provide an initial structure including a substrate; a plurality of spaced-apart metal lines, outward of the substrate; and a plurality of dielectric regions, outward of the substrate, and between the plurality of spaced-apart metal lines. Apply a reactive material of interest on an outer surface of the initial structure to produce a secondary structure. Apply electromagnetic radiation, such as microwaves, to the secondary structure to cause development of an electric field adjacent the plurality of dielectric regions, but not adjacent the plurality of spaced-apart metal lines, which in turn causes reaction of the reactive material of interest adjacent the plurality of dielectric regions, but not adjacent the plurality of spaced-apart metal lines. This produces a tertiary structure with unreacted reactive material of interest adjacent the plurality of spaced-apart metal lines and reacted reactive material of interest adjacent the plurality of dielectric regions.

Abstract: A method of forming a composite crystalline nitride structure is provided. The method includes depositing a first crystalline nitride layer on a substrate, patterning the first crystalline nitride layer to form a patterned crystalline nitride layer having a top surface and that includes undulations, annealing the patterned crystalline nitride layer at a temperature between 300° C. to 850° C. to form an annealed patterned crystalline nitride layer, and depositing a second crystalline nitride layer on the annealed patterned crystalline nitride layer. The second crystalline nitride layer is lattice-matched to the underlying annealed patterned crystalline nitride layer to within 2%, thereby forming the composite crystalline nitride structure.

Abstract: Various devices are described (along with methods for making them), where the device has a tunnel barrier sandwiched between two magnetic layers (one of the magnetic layers functioning as a free layer and the other of the magnetic layers functioning as a reference layer). One magnetic layer underlies the tunnel barrier and the other magnetic layer overlies the tunnel barrier, thereby permitting spin-polarized current to pass across the magnetic layers and through the tunnel barrier. At least one of the magnetic layers includes a metal oxide sublayer (e.g., an MgO sublayer) sandwiched between magnetic material.

Abstract: Forming a hardmask layer for reactive ion etching includes depositing a hardmask above an underlayer. The hardmask includes a layer of magnesium oxide having a thickness of up to 10 nm. A resist layer is deposited above the hardmask and developed to form a pattern that exposes portions of the hardmask. The pattern is transferred from the resist layer to the hardmask by rinsing exposed portions of the hardmask with a deionized water solution.

Abstract: A magnetic double tunnel junction (MDTJ) (which, preferably, has a large aspect ratio, wherein length L of the MDTJ>>width w of the MDTJ) has magnetic domain wall(s) or DW(s) in the free layer of the MDTJ, wherein controlled movement of the DW(s) across the free layer is effected in response to the polarity, magnitude, and duration of a voltage pulse across the MDTJ. The motion and relative position of DW(s) causes the conductance of the MDTJ (that is measured across the MDTJ) to change in a symmetric and linear fashion. By reversing the polarity of the bias voltage, the creation and/or direction of the DW(s) motion can be reversed, thereby allowing for a bi-directional response to the input pulse.

Abstract: A method of forming a composite crystalline nitride structure is provided. The method includes depositing a first crystalline nitride layer on a substrate, patterning the first crystalline nitride layer to form a patterned crystalline nitride layer having a top surface and that includes undulations, annealing the patterned crystalline nitride layer at a temperature between 300° C. to 850° C. to form an annealed patterned crystalline nitride layer, and depositing a second crystalline nitride layer on the annealed patterned crystalline nitride layer. The second crystalline nitride layer is lattice-matched to the underlying annealed patterned crystalline nitride layer to within 2%, thereby forming the composite crystalline nitride structure.

Abstract: A titanium (Ti) seed layer is formed from a Ti source directly on a surface of a substrate, where the surface is substantially free of oxide and nitride, and a reactive nitrogen species is introduced from a nitrogen plasma source and additional Ti is introduced from the Ti source, wherein the nitrogen plasma: (a) reacts with the Ti seed layer to form TiN and (b) reacts with the additional Ti to form additional TiN. The TiN and additional TiN collectively form a TiN superconducting layer that directly contacts the surface of the substrate.

Abstract: A hybrid template assisted selective epitaxy (HTASE) process is described comprising the steps of: depositing a template oxide layer on top of a silicon fin; opening a via in a selected portion of the template oxide to expose a portion of the encapsulated silicon fin and subsequently growing a nitride superconductor layer on top of the exposed silicon fin thereby forming a hybrid encapsulation of the silicon fin; performing a back-etch of the silicon fin to remove a portion (e.g., 5 nm-20 um) of the silicon fin; growing a layer formed from a group III/group V compound within an area where the silicon fin was removed via the back-etch; and if needed, removing the template oxide layer.

Abstract: A hybrid template assisted selective epitaxy (HTASE) process is described comprising the steps of: depositing a template oxide layer on top of a silicon fin; opening a via in a selected portion of the template oxide to expose a portion of the encapsulated silicon fin and subsequently growing a nitride superconductor layer on top of the exposed silicon fin thereby forming a hybrid encapsulation of the silicon fin; performing a back-etch of the silicon fin to remove a portion (e.g., 5 nm-20 um) of the silicon fin; growing a layer formed from a group III/group V compound within an area where the silicon fin was removed via the back-etch; and if needed, removing the template oxide layer.

Abstract: A titanium (Ti) seed layer is formed from a Ti source directly on a surface of a substrate, where the surface is substantially free of oxide and nitride, and a reactive nitrogen species is introduced from a nitrogen plasma source and additional Ti is introduced from the Ti source, wherein the nitrogen plasma: (a) reacts with the Ti seed layer to form TiN and (b) reacts with the additional Ti to form additional TiN. The TiN and additional TiN collectively form a TiN superconducting layer that directly contacts the surface of the substrate.

Abstract: Various devices are described (along with methods for making them), where the device has a tunnel barrier sandwiched between two magnetic layers (one of the magnetic layers functioning as a free layer and the other of the magnetic layers functioning as a reference layer). One magnetic layer underlies the tunnel barrier and the other magnetic layer overlies the tunnel barrier, thereby permitting spin-polarized current to pass across the magnetic layers and through the tunnel barrier. At least one of the magnetic layers includes a metal oxide sublayer (e.g., an MgO sublayer) sandwiched between magnetic material.

Abstract: A magnetic double tunnel junction (MDTJ) (which, preferably, has a large aspect ratio, wherein length L of the MDTJ>>width w of the MDTJ) has magnetic domain wall(s) or DW(s) in the free layer of the MDTJ, wherein controlled movement of the DW(s) across the free layer is effected in response to the polarity, magnitude, and duration of a voltage pulse across the MDTJ. The motion and relative position of DW(s) causes the conductance of the MDTJ (that is measured across the MDTJ) to change in a symmetric and linear fashion. By reversing the polarity of the bias voltage, the creation and/or direction of the DW(s) motion can be reversed, thereby allowing for a bi-directional response to the input pulse.

Abstract: A device comprising a first magnetic layer (e.g., Co2MnSi Heusler alloy or a tetragonally distorted perpendicularly magnetized (PMA) Heusler alloy such as Mn3Ga, Mn3Ge, etc.) and a second magnetic layer (e.g., Co2MnSi Heusler alloy or a tetragonally distorted perpendicularly magnetized (PMA) Heusler alloy such as Mn3Ga, Mn3Ge, etc.), and a metal halide tunnel barrier in between the first and second magnetic layers, wherein the metal halide tunnel barrier (e.g., NaF, NaCl, NaBr, LiF, LiCl, and LiBr or their combination) is lattice matched within a predetermined limit (e.g. 5%) of both the first and second magnetic layers.

Abstract: A device comprising a first magnetic layer (e.g., Co2MnSi Heusler alloy or a tetragonally distorted perpendicularly magnetized (PMA) Heusler alloy such as Mn3Ga, Mn3Ge, etc.) and a second magnetic layer (e.g., Co2MnSi Heusler alloy or a tetragonally distorted perpendicularly magnetized (PMA) Heusler alloy such as Mn3Ga, Mn3Ge, etc.), and a metal halide tunnel barrier in between the first and second magnetic layers, wherein the metal halide tunnel barrier (e.g., NaF, NaCl, NaBr, LiF, LiCl, and LiBr or their combination) is lattice matched within a predetermined limit (e.g. 5%) of both the first and second magnetic layers.

Abstract: A tunable resistance device and methods of forming the same include a magnetic fixed layer having a fixed magnetization, a magnetic free layer, and a non-magnetic conductive layer directly between the magnetic fixed layer and the magnetic free layer. The magnetic fixed layer, the magnetic free layer, and the non-magnetic conductive layer are formed in a lattice of wires, with each wire in the lattice being formed from a stack of the magnetic fixed layer, the magnetic free layer, and the non-magnetic conductive layer.

Abstract: A device comprising a control unit and a plurality of resistive cells. The plurality of resistive cells each comprises a first terminal, a second terminal and a polymorphic layer comprising a polymorphic material. The polymorphic layer is configured to form a tunnel barrier. The polymorphic layer is arranged between the first terminal and the second terminal. The first terminal, the second terminal and the polymorphic layer form a tunnel junction.

Abstract: A device comprising a control unit and a plurality of resistive cells. The plurality of resistive cells each comprises a first terminal, a second terminal and a polymorphic layer comprising a polymorphic material. The polymorphic layer is configured to form a tunnel barrier. The polymorphic layer is arranged between the first terminal and the second terminal. The first terminal, the second terminal and the polymorphic layer form a tunnel junction.

Abstract: A tunable resistance device and methods of forming the same include a magnetic fixed layer having a fixed magnetization, a magnetic free layer, and a non-magnetic conductive layer directly between the magnetic fixed layer and the magnetic free layer. The magnetic fixed layer, the magnetic free layer, and the non-magnetic conductive layer are formed in a lattice of wires, with each wire in the lattice being formed from a stack of the magnetic fixed layer, the magnetic free layer, and the non-magnetic conductive layer.