Abstract: According to an example aspect of the present invention, there is provided a detector comprising an optically absorbing membrane suspended over a cavity between the membrane and a substrate, the substrate comprised in the detector, and a thermoelectric transducer attaching the optically absorbing membrane over the cavity, wherein the optically absorbing membrane forms a contacting element between n-type and p-type thermoelectric elements of the thermoelectric transducer.

Abstract: An absorber structure for a thermal detector, the absorber structure including edges defining a basic form, a plurality of first legs of electrically conducting material joined in an electrically conductive manner to form, between the edges of the absorber structure, a grid having openings, the first legs forming at least one continuous connection between the edges of the absorber structure; and a plurality of second legs of electrically conducting material joined in an electrically conductive manner to the first legs, wherein the second legs protrude from the first legs into the openings of the grid and terminate at points of termination located at a distance from adjacent first legs.

Abstract: An absorber structure for a thermal detector, the absorber structure including edges defining a basic form, a plurality of first legs of electrically conducting material joined in an electrically conductive manner to form, between the edges of the absorber structure, a grid having openings, the first legs forming at least one continuous connection between the edges of the absorber structure; and a plurality of second legs of electrically conducting material joined in an electrically conductive manner to the first legs, wherein the second legs protrude from the first legs into the openings of the grid and terminate at points of termination located at a distance from adjacent first legs.

Abstract: A wafer-level integrated thermal detector comprises a first wafer and a second wafer (W1, W2) bonded together. The first wafer (W1) includes a dielectric or semiconducting substrate (100), a dielectric sacrificial layer (102) deposited on the substrate, a support layer (104) deposited on the sacrificial layer or the substrate, a suspended active element (108) provided within an opening (106) in the support layer, a first vacuum-sealed cavity (110) and a second vacuum-sealed cavity (106) on opposite sides of the suspended active element. The first vacuum-sealed cavity (110) extends into the sacrificial layer (102) at the location of the suspended active element (108). The second vacuum-sealed cavity (106) comprises the opening of the support layer (104) closed by the bonded second wafer.

Abstract: A wafer-level integrated thermal detector comprises a first wafer and a second wafer (W1, W2) bonded together. The first wafer (W1) includes a dielectric or semiconducting substrate (100), a dielectric sacrificial layer (102) deposited on the substrate, a support layer (104) deposited on the sacrificial layer or the substrate, a suspended active element (108) provided within an opening (106) in the support layer, a first vacuum-sealed cavity (110) and a second vacuum-sealed cavity (106) on opposite sides of the suspended active element. The first vacuum-sealed cavity (110) extends into the sacrificial layer (102) at the location of the suspended active element (108). The second vacuum-sealed cavity (106) comprises the opening of the support layer (104) closed by the bonded second wafer.

Abstract: A method for producing a mirror plate for a Fabry-Perot interferometer includes providing a substrate, which includes silicon, implementing a semi-transparent reflective coating on the substrate, forming a passivated region in and/or on the substrate by etching a plurality of voids in the substrate, and by passivating the surfaces of the voids, forming a first sensor electrode on top of the passivated region, and forming a second sensor electrode supported by the substrate.

Abstract: A mirror plate (100) for a Fabry-Perot interferometer (300) includes a substrate (50), which includes silicon (Si), a semi-transparent reflective coating (110) implemented on the substrate (50), a de-coupling structure (DC1) formed on the substrate (50), a first sensor electrode (G1a) formed on top of the de-coupling structure (DC1), and a second sensor electrode (G1b), wherein the de-coupling structure (DC1) includes an electrically insulating layer (60a), and a first stabilizing electrode (G0a), which is located between the first sensor electrode (G1a) and the substrate (50).

Abstract: A method for producing a mirror plate for a Fabry-Perot interferometer includes providing a substrate, which includes silicon, implementing a semi-transparent reflective coating on the substrate, forming a passivated region in and/or on the substrate by etching a plurality of voids in the substrate, and by passivating the surfaces of the voids, forming a first sensor electrode on top of the passivated region, and forming a second sensor electrode supported by the substrate.

Abstract: A mirror plate (100) for a Fabry-Perot interferometer (300) includes a substrate (50), which includes silicon (Si), a semi-transparent reflective coating (110) implemented on the substrate (50), a de-coupling structure (DC1) formed on the substrate (50), a first sensor electrode (G1a) formed on top of the de-coupling structure (DC1), and a second sensor electrode (G1b), wherein the de-coupling structure (DC1) includes an electrically insulating layer (60a), and a first stabilizing electrode (G0a), which is located between the first sensor electrode (G1a) and the substrate (50).