Patents by Inventor Aarnoud L. Roest

Aarnoud L. Roest has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Tantalum-based electrode stack
    Patent number: 8570706
    Abstract: An electronic device includes a metal-insulator-metal capacitive device. In connection with an example embodiment, a metal-insulator-metal (MIM) capacitor device is in a substrate having a surface and a three dimensional structure with high aspect ratio sidewalls. The MIM capacitor device includes a first capacitor electrode including a platinum group metal (PGM)-based layer and a Ta-based layer that is between the PGM-based layer and one of the sidewalls. The MIM capacitor also includes a second capacitor electrode and an insulator material between the first and second electrodes.
    Type: Grant
    Filed: August 23, 2010
    Date of Patent: October 29, 2013
    Assignee: NXP B.V.
    Inventors: Willem F. A. Besling, Aarnoud L. Roest, Klaus Reimann, Linda van Leuken-Peters
  • TANTALUM-BASED ELECTRODE STACK
    Publication number: 20120044612
    Abstract: An electronic device includes a metal-insulator-metal capacitive device. In connection with an example embodiment, a metal-insulator-metal (MIM) capacitor device is in a substrate having a surface and a three dimensional structure with high aspect ratio sidewalls. The MIM capacitor device includes a first capacitor electrode including a platinum group metal (PGM)-based layer and a Ta-based layer that is between the PGM-based layer and one of the sidewalls. The MIM capacitor also includes a second capacitor electrode and an insulator material between the first and second electrodes.
    Type: Application
    Filed: August 23, 2010
    Publication date: February 23, 2012
    Applicant: NXP B.V.
    Inventors: Willem F. A. Besling, Aarnoud L. Roest, Klaus Reimann, Linda van Leuken-Peters