Patents by Inventor Aarnoud Laurens Roest
Aarnoud Laurens Roest has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9734951Abstract: A MEMS electrostatic actuator comprises first and second opposing electrode arrangements, wherein at least one of the electrode arrangements is movable. A dielectric material (24) is adjacent the one of the electrode arrangements (22). The second electrode arrangement is patterned such that it includes electrode areas (26) and spaces adjacent the electrode areas, wherein the dielectric material (24) extends at least partially in or over the spaces. The invention uses a multitude of electrode portions as one plate. The electric field lines thus form clusters between the individual electrode portions and the opposing electrode. This arrangement provides an extended range of continuous actuation and tunability.Type: GrantFiled: March 10, 2010Date of Patent: August 15, 2017Assignee: NXP B.V.Inventors: Klaus Reimann, Aarnoud Laurens Roest, Jin Liu
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Patent number: 9590027Abstract: The present invention relates to a method for fabricating an electronic component, comprising fabricating, on a substrate (102) at least one integrated MIM capacitor (114) having a top capacitor electrode (118) and a bottom capacitor electrode (112) at a smaller distance from the substrate than the top capacitor electrode; fabricating an electrically insulating first cover layer (120) on the top capacitor electrode, which first cover layer partly or fully covers the top capacitor electrode and is made of a lead-containing dielectric material; thinning the first cover layer; fabricating an electrically insulating second cover layer (124) on the first cover layer, which second cover layer partly or fully covers the first cover layer and has a dielectric permittivity smaller than that of the first cover layer; and fabricating an electrically conductive resistor layer (126) on the second cover layer, which resistor layer has a defined ohmic resistance.Type: GrantFiled: April 14, 2010Date of Patent: March 7, 2017Assignee: NXP B.V.Inventors: Aarnoud Laurens Roest, Linda Van Leuken-Peters
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Patent number: 8901705Abstract: The present invention relates to an electronic component, that comprises, on a substrate, at least one integrated MIM capacitor, (114) an electrically insulating first cover layer (120) which partly or fully covers the top capacitor electrode (118) and is made of a lead-containing dielectric material, and a top barrier layer (122) on the first cover layer. The top barrier layer serves for avoiding a reduction of lead atoms comprised by the first cover layer under exposure of the first cover layer to a reducing substance. An electrically insulating second cover layer (124) on the top barrier layer has a dielectric permittivity smaller than that of the first cover layer establishes a low parasitic capacitance of the cover-layer structure. The described cover-layer structure with the intermediate top barrier layer allows to fabricate a high-accuracy resistor layer (126.1) on top.Type: GrantFiled: October 22, 2009Date of Patent: December 2, 2014Assignee: NXP, B.V.Inventors: Aarnoud Laurens Roest, Mareike Klee, Rudiger Gunter Mauczok, Linda Van Leuken-Peters, Robertus Adrianus Maria Wolters
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Patent number: 8767373Abstract: The invention relates to electronic device having an operation temperature range, wherein the electronic device comprises a tunable capacitor (CST) comprising a first electrode (BE), a second electrode (TE), and a dielectric (FEL) arranged between the first electrode (BE) and the second electrode (TE). The dielectric (FEL) comprises dielectric material (FEL) having a value of a relative dielectric constant (?r) varying at least within the operation temperature range. The electronic device further comprises a temperature varying means (RES) being thermally coupled to the tunable capacitor for providing a temperature of the dielectric (FEL) causing a predetermined capacitance of the tunable capacitor (CST). The invention, which relies on the idea of varying temperature to vary a capacitance of a capacitor stack, provides an alternative tunable capacitor type for the known types.Type: GrantFiled: April 29, 2009Date of Patent: July 1, 2014Assignee: NXP, B.V.Inventors: Yukiko Furukawa, Klaus Reimann, Friso Jacobus Jedema, Markus Petrus Josephus Tiggelman, Aarnoud Laurens Roest
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Patent number: 8659124Abstract: The invention relates to a semiconductor device comprising a physical structure (50) for use in a physical unclonable function, wherein the physical structure (50) comprises a lead-zirconium titanate layer (25), and a silicon-comprising dielectric layer (27) deposited on the lead-zirconium-titanate layer (25), wherein the silicon-comprising dielectric layer (27) has a rough surface (SR), the physical structure (50) further comprising a conductive layer (30) provided on the rough surface (SR) of the silicon-comprising dielectric layer (27). The invention further relates to a method of manufacturing such semiconductor device. The invention also relates to a card, such as a smartcard, and to a RFID tag comprising such semiconductor device. The inventors have found that depositing of a silicon- comprising dielectric layer (27) on a lead-zirconium titanate layer (25) using vapor deposition results in a silicon-comprising dielectric layer (27) having a rough surface (SR).Type: GrantFiled: December 21, 2009Date of Patent: February 25, 2014Assignee: NXP B.V.Inventors: Aarnoud Laurens Roest, Linda Van Leuken-Peters, Robertus Andrianus Maria Wolters
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Patent number: 8531862Abstract: The present invention relates to an electric component comprising at least one first MIM capacitor having a ferroelectric insulator with a dielectric constant of at least 100 between a first capacitor electrode of a first electrode material and a second capacitor electrode of a second electrode material. The first and second electrode materials are selected such that the first MIM capacitor exhibits, as a function of a DC voltage applicable between the first and second electrodes, an asymmetric capacitance hysteresis that lets the first MIM capacitor, in absence of the DC voltage, assume one of at least two possible distinct capacitance values, in dependence on a polarity of a switching voltage last applied to the capacitor, the switching voltage having an amount larger than a threshold-voltage amount. The invention is applicable for ESD sensors, memories and high-frequency devices.Type: GrantFiled: October 24, 2009Date of Patent: September 10, 2013Assignee: NXP B.V.Inventors: Aarnoud Laurens Roest, Mareike Klee, Rudiger Mauczok, Klaus Reimann, Michael Joehren
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Patent number: 8486800Abstract: A method of fabricating a trench capacitor, and a trench capacitor fabricated thereby, are disclosed. The method involves the use of a vacuum impregnation process for a sol-gel film, to facilitate effective deposition of high-permittivity materials within a trench in a semiconductor substrate, to provide a trench capacitor having a high capacitance while being efficient in utilization of semiconductor real estate.Type: GrantFiled: May 26, 2009Date of Patent: July 16, 2013Assignee: NXP B.V.Inventors: Jin Liu, Aarnoud Laurens Roest, Freddy Roozeboom, Vahid Shabro
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Patent number: 8203912Abstract: A capacitive ultrasound transducer includes a first electrode, a second electrode, and a third electrode, the third electrode including a central region disposed in collapsibly spaced relation with the first electrode, and a peripheral region disposed outward of the central region and disposed in collapsibly spaced relation with the second electrode. The transducer further includes a layer of a high dielectric constant material disposed between the third electrode and the first electrode, and between the third electrode and the second electrode. The transducer may be operable in a collapsed mode wherein the peripheral region of the third electrode oscillates relative to the second electrode, and the central region of the third electrode is fully collapsed with respect to the first electrode such that the dielectric layer is sandwiched therebetween. Piezoelectric actuation, such as d31 and d33 mode piezoelectric actuation, may further be included.Type: GrantFiled: July 31, 2008Date of Patent: June 19, 2012Assignee: Koninklijke Philips Electronics N.V.Inventors: Aarnoud Laurens Roest, Klaus Reimann, Mareike Klee, Jozef Thomas Martinus van Beek, John Douglas Fraser
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Publication number: 20120055768Abstract: A MEMS electrostatic actuator comprises first and second opposing electrode arrangements, wherein at least one of the electrode arrangements is movable. A dielectric material (24) is adjacent the one of the electrode arrangements (22). The second electrode arrangement is patterned such that it includes electrode areas (26) and spaces adjacent the electrode areas, wherein the dielectric material (24) extends at least partially in or over the spaces. The invention uses a multitude of electrode portions as one plate. The electric field lines thus form clusters between the individual electrode portions and the opposing electrode. This arrangement provides an extended range of continuous actuation and tunability.Type: ApplicationFiled: March 10, 2010Publication date: March 8, 2012Applicant: NXP B.V.Inventors: Klaus Reimann, Aarnoud Laurens Roest, Jin Liu
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Publication number: 20120045881Abstract: The present invention relates to a method for fabricating an electronic component, comprising fabricating, on a substrate (102) at least one integrated MIM capacitor (114) having a top capacitor electrode (118) and a bottom capacitor electrode (112) at a smaller distance from the substrate than the top capacitor electrode; fabricating an electrically insulating first cover layer (120) on the top capacitor electrode, which first cover layer partly or fully covers the top capacitor electrode and is made of a lead-containing dielectric material; thinning the first cover layer; fabricating an electrically insulating second cover layer (124) on the first cover layer, which second cover layer partly or fully covers the first cover layer and has a dielectric permittivity smaller than that of the first cover layer; and fabricating an electrically conductive resistor layer (126) on the second cover layer, which resistor layer has a defined ohmic resistance.Type: ApplicationFiled: April 14, 2010Publication date: February 23, 2012Applicant: NXP B.V.Inventors: Aarnoud Laurens Roest, Linda Van Leuken-Peters
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Publication number: 20110254141Abstract: The invention relates to a semiconductor device comprising a physical structure (50) for use in a physical unclonable function, wherein the physical structure (50) comprises a lead-zirconium titanate layer (25), and a silicon-comprising dielectric layer (27) deposited on the lead-zirconium-titanate layer (25), wherein the silicon-comprising dielectric layer (27) has a rough surface (SR), the physical structure (50) further comprising a conductive layer (30) provided on the rough surface (SR) of the silicon-comprising dielectric layer (27). The invention further relates to a method of manufacturing such semiconductor device. The invention also relates to a card, such as a smartcard, and to a RFID tag comprising such semiconductor device. The inventors have found that depositing of a silicon- comprising dielectric layer (27) on a lead-zirconium titanate layer (25) using vapor deposition results in a silicon-comprising dielectric layer (27) having a rough surface (SR).Type: ApplicationFiled: December 21, 2009Publication date: October 20, 2011Applicant: NXP B.V.Inventors: Aarnoud Laurens Roest, Linda Van Leuken-Peters, Robertus Andrianus Maria Wolters
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Publication number: 20110204480Abstract: The present invention relates to an electronic component, that comprises, on a substrate, at least one integrated MIM capacitor, (114) an electrically insulating first cover layer (120) which partly or fully covers the top capacitor electrode (118) and is made of a lead-containing dielectric material, and a top barrier layer (122) on the first cover layer. The top barrier layer serves for avoiding a reduction of lead atoms comprised by the first cover layer under exposure of the first cover layer to a reducing substance. An electrically insulating second cover layer (124) on the top barrier layer has a dielectric permittivity smaller than that of the first cover layer establishes a low parasitic capacitance of the cover-layer structure. The described cover-layer structure with the intermediate top barrier layer allows to fabricate a high-accuracy resistor layer (126.1) on top.Type: ApplicationFiled: October 22, 2009Publication date: August 25, 2011Applicant: NXP B.V.Inventors: Aarnoud Laurens Roest, Mareike Klee, Rudiger Gunter Mauczok, Linda Van Leuken-Peters, Robertus Adrianus Maria Wolters
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Publication number: 20110198725Abstract: The present invention relates to an electric component comprising at least one first MIM capacitor having a ferroelectric insulator with a dielectric constant of at least 100 between a first capacitor electrode of a first electrode material and a second capacitor electrode of a second electrode material. The first and second electrode materials are selected such that the first MIM capacitor exhibits, as a function of a DC voltage applicable between the first and second electrodes, an asymmetric capacity hysteresis that lets the first MIM capacitor, in absence of the DC voltage, assume one of at least two possible distinct capacitance values, in dependence on a polarity of a switching voltage last applied to the capacitor, the switching voltage having an amount larger than a threshold-voltage amount. The invention is applicable for ESD sensors, memories and high-frequency devices.Type: ApplicationFiled: October 24, 2009Publication date: August 18, 2011Applicant: NXP B.V.Inventors: Aarnoud Laurens Roest, Mareike Klee, Rudiger Mauczox, Klaus Reimann, Michael Joehren
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Publication number: 20110073994Abstract: A method of fabricating a trench capacitor, and a trench capacitor fabricated thereby, are disclosed. The method involves the use of a vacuum impregnation process for a sol-gel film, to facilitate effective deposition of high-permittivity materials within a trench in a semiconductor substrate, to provide a trench capacitor having a high capacitance whilst being efficient in utilisation of semiconductor real estate.Type: ApplicationFiled: May 26, 2009Publication date: March 31, 2011Applicant: NXP B.V.Inventors: Jin Liu, Aarnoud Laurens Roest, Freddy Roozeboom, Vahid Shabro
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Publication number: 20110051309Abstract: The invention relates to electronic device having an operation temperature range, wherein the electronic device comprises a tunable capacitor (CST) comprising a first electrode (BE), a second electrode (TE), and a dielectric (FEL) arranged between the first electrode (BE) and the second electrode (TE). The dielectric (FEL) comprises dielectric material (FEL) having a value of a relative dielectric constant (?r) varying at least within the operation temperature range. The electronic device further comprises a temperature varying means (RES) being thermally coupled to the tunable capacitor for providing a temperature of the dielectric (FEL) causing a predetermined capacitance of the tunable capacitor (CST). The invention, which relies on the idea of varying temperature to vary a capacitance of a capacitor stack, provides an alternative tunable capacitor type for the known types.Type: ApplicationFiled: April 29, 2009Publication date: March 3, 2011Applicant: NXP B.V.Inventors: Yukiko Furukawa, Klaus Reimann, Friso Jacobus Jedema, Markus Petrus Josephus Tiggleman, Aarnoud Laurens Roest
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Publication number: 20100202254Abstract: A capacitive ultrasound transducer includes a first electrode, a second electrode, and a third electrode, the third electrode including a central region disposed in collapsibly spaced relation with the first electrode, and a peripheral region disposed outward of the central region and disposed in collapsibly spaced relation with the second electrode. The transducer further includes a layer of a high dielectric constant material disposed between the third electrode and the first electrode, and between the third electrode and the second electrode. The transducer may be operable in a collapsed mode wherein the peripheral region of the third electrode oscillates relative to the second electrode, and the central region of the third electrode is fully collapsed with respect to the first electrode such that the dielectric layer is sandwiched therebetween. Piezoelectric actuation, such as d31 and d33 mode piezoelectric actuation, may further be included.Type: ApplicationFiled: July 31, 2008Publication date: August 12, 2010Applicant: KONINKLIJKE PHILIPS ELECTRONICS N.V.Inventors: Aarnoud Laurens Roest, Klaus Reimann, Mareike Klee, Jozef Thomas Martinus Van Beek, John Douglas Fraser
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Publication number: 20090267164Abstract: The invention relates to a method of manufacturing a semiconductor sensor device (10) for sensing a substance comprising a plurality of mutually parallel mesa-shaped semiconductor regions (1) which are formed on a surface of a semiconductor body (11) and which are connected at a first end to a first electrically conducting connection region (2) and at a second end to a second electrically conducting connection region (3) while a gas or a liquid comprising a substance to be sensed can flow between the mesa-shaped semiconductor regions (1) and the substance to be sensed can influence the electrical properties of the plurality of the mesa-shaped semiconductor regions (1), wherein at the surface of the semiconductor body (11) the first connection region (2) is formed and connected thereto with the first end the plurality of mesa-shaped semiconductor regions (1) is formed, and subsequently the second connection region (3) is formed connected to the plurality of mesa-shaped semiconductor regions (1) at their secondType: ApplicationFiled: August 21, 2007Publication date: October 29, 2009Applicant: KONINKLIJKE PHILIPS ELECTRONICS N.V.Inventors: Olaf Wunnicke, Erik Petrus Antonius Maria Bakkers, Aarnoud Laurens Roest