Abstract: An apparatus for electroplating metal on a semiconductor substrate with improved azimuthal uniformity includes in one aspect: a plating chamber configured to contain an electrolyte and an anode; a substrate holder configured to hold the semiconductor substrate; an ionically resistive ionically permeable element (“the element”) configured to be positioned proximate the substrate; and a shield configured for providing azimuthally asymmetrical shielding and positioned between the substrate holder and the element such that the closest distance between the substrate-facing surface of the shield and the working surface of the substrate is less than 2 mm. In some embodiments there is an electrolyte-filled gap between the substrate-facing surface of the element and the shield during electroplating. The substrate-facing surface of the shield may be contoured such that the distance from different positions of the shield to the substrate is varied.

Abstract: An apparatus for electroplating metal on a semiconductor substrate with improved plating uniformity includes in one aspect: a plating chamber configured to contain an electrolyte and an anode; a substrate holder configured to hold the semiconductor substrate; and an ionically resistive ionically permeable element comprising a substantially planar substrate-facing surface and an opposing surface, wherein the element allows for flow of ionic current towards the substrate during electroplating, and wherein the element comprises a region having varied local resistivity. In one example the resistivity of the element is varied by varying the thickness of the element. In some embodiments the thickness of the element is gradually reduced in a radial direction from the edge of the element to the center of the element. The provided apparatus and methods are particularly useful for electroplating metal in WLP recessed features.

Abstract: Methods and apparatus for electroplating substrates are described herein. In some cases, an ionically resistive element is positioned near the substrate, creating a cross flow manifold between the ionically resistive element and the substrate. During plating, fluid may enter the cross flow manifold upward through the channels in the ionically resistive element, and (optionally) laterally through a cross flow side inlet. The flow paths combine in the cross flow manifold and exit at the cross flow outlet, which may be positioned opposite the cross flow inlet. In some embodiments, the ionically resistive element may include two or more flow regions, where the flow through each flow region is independently controllable. In these or other embodiments, an electrolyte jet may be included to flow additional electrolyte toward the substrate at a particular radial location or locations during plating. In some embodiments, the ionically resistive element may be omitted.

Abstract: A lipseal is designed for use in a lipseal assembly of an electroplating apparatus wherein a clamshell engages and supplies electrical current to a semiconductor substrate during electroplating. The lipseal includes an elastomeric body having an outer portion configured to engage a cup of the lipseal assembly and an inner portion configured to engage a peripheral region of the semiconductor substrate. The inner portion includes a protrusion having a width in a radial direction sufficient to provide a contact area with the semiconductor substrate which inhibits diffusion of acid in an electroplating solution used during the electroplating. The protrusion is located at an inner periphery of the lipseal.

Abstract: Disclosed are electroplating cups for holding, sealing, and providing electrical power to wafers during electroplating, where the electroplating cup can include a cup bottom, an elastomeric lipseal, and an electrical contact element. The cup bottom can include a radially inwardly protruding surface with a plurality of through-holes. The elastomeric lipseal can directly adhere to the radially inwardly protruding surface of the cup bottom, fill the plurality of through-holes, and encircle an inner edge of the cup bottom. In some implementations, this can mitigate the effects of wafer sticking. In some implementations, the cup bottom may be treated to promote adhesion between the elastomeric lipseal and the radially inwardly protruding surface of the cup bottom.

Abstract: An apparatus for electroplating metal on a semiconductor substrate with improved plating uniformity includes in one aspect: a plating chamber configured to contain an electrolyte and an anode; a substrate holder configured to hold the semiconductor substrate; and an ionically resistive ionically permeable element comprising a substantially planar substrate-facing surface and an opposing surface, wherein the element allows for flow of ionic current towards the substrate during electroplating, and wherein the element comprises a region having varied local resistivity. In one example the resistivity of the element is varied by varying the thickness of the element. In some embodiments the thickness of the element is gradually reduced in a radial direction from the edge of the element to the center of the element. The provided apparatus and methods are particularly useful for electroplating metal in WLP recessed features.

Abstract: An apparatus for electroplating metal on a semiconductor substrate with improved azimuthal uniformity includes in one aspect: a plating chamber configured to contain an electrolyte and an anode; a substrate holder configured to hold the semiconductor substrate; an ionically resistive ionically permeable element (“the element”) configured to be positioned proximate the substrate; and a shield configured for providing azimuthally asymmetrical shielding and positioned between the substrate holder and the element such that the closest distance between the substrate-facing surface of the shield and the working surface of the substrate is less than 2 mm. In some embodiments there is an electrolyte-filled gap between the substrate-facing surface of the element and the shield during electroplating. The substrate-facing surface of the shield may be contoured such that the distance from different positions of the shield to the substrate is varied.

Abstract: The embodiments herein relate to methods and apparatus for electroplating one or more materials onto a substrate. Typically, the embodiments herein utilize a channeled plate positioned near the substrate, creating a cross flow manifold between the channeled plate and substrate, and on the sides by a flow confinement ring. A seal may be provided between the bottom surface of a substrate holder and the top surface of an element below the substrate holder (e.g., the flow confinement ring). During plating, fluid enters the cross flow manifold through channels in the channeled plate, and through a cross flow inlet, then exits at the cross flow exit, positioned opposite the cross flow inlet. The apparatus may switch between a sealed state and an unsealed state during electroplating, for example by lowering and lifting the substrate and substrate holder as appropriate to engage and disengage the seal.

Abstract: Disclosed herein are methods of electroplating which may include placing a substrate, an anode, and an electroplating solution in an electroplating cell such that the substrate and the anode are located on opposite sides of a fluidically-permeable plate, setting the configuration of one or more seals which, when in their sealing configuration, substantially seal pores of the fluidically-permeable plate, and applying an electrical potential between the anode and the first substrate sufficient to cause electroplating on the first substrate such that the rate of electroplating in an edge region of the first substrate is affected by the configuration of the one or more seals. Also disclosed herein are apparatuses for electroplating which may include one or more seals for substantially sealing a subset of the pores in a fluidically-permeable plate whose sealing configuration affects a rate of electroplating in an edge region of the substrate.

Abstract: Disclosed are electroplating cups for engaging wafers during electroplating, where the electroplating cup can include a ring-shaped cup bottom, an elastomeric seal, and an electrical contact element. The cup bottom may be repeatedly exposed to electroplating solution. The cup bottom can include a non-conductive material upon which a solid lubricant coating can be applied. The solid lubricant coating can be cured at a relatively low temperature, such as less than the melting temperature of the non-conductive material, and can be durable and hydrophobic.

Abstract: An apparatus for electroplating metal on a substrate while controlling plating uniformity includes in one aspect: a plating chamber having anolyte and catholyte compartments separated by a membrane; a primary anode positioned in the anolyte compartment; an ionically resistive ionically permeable element positioned between the membrane and a substrate in the catholyte compartment; and a secondary electrode configured to donate and/or divert plating current to and/or from the substrate, wherein the secondary electrode is positioned such that the donated and/or diverted plating current does not cross the membrane separating the anolyte and catholyte compartments, but passes through the ionically resistive ionically permeable element. In some embodiments the secondary electrode is an azimuthally symmetrical anode (e.g., a ring positioned in a separate compartment around the periphery of the plating chamber) that can be dynamically controlled during electroplating.

Abstract: Disclosed are electroplating cups for holding, sealing, and providing electrical power to wafers during electroplating, where the electroplating cup can include a cup bottom, an elastomeric lipseal, and an electrical contact element. The cup bottom can include a radially inwardly protruding surface with a plurality of through-holes. The elastomeric lipseal can directly adhere to the radially inwardly protruding surface of the cup bottom, fill the plurality of through-holes, and encircle an inner edge of the cup bottom. In some implementations, this can mitigate the effects of wafer sticking. In some implementations, the cup bottom may be treated to promote adhesion between the elastomeric lipseal and the radially inwardly protruding surface of the cup bottom.

Abstract: An apparatus for electroplating metal on a semiconductor substrate with improved azimuthal uniformity includes in one aspect: a plating chamber configured to contain an electrolyte and an anode; a substrate holder configured to hold the semiconductor substrate; an ionically resistive ionically permeable element (“the element”) configured to be positioned proximate the substrate; and a shield configured for providing azimuthally asymmetrical shielding and positioned between the substrate holder and the element such that the closest distance between the substrate-facing surface of the shield and the working surface of the substrate is less than 2 mm. In some embodiments there is an electrolyte-filled gap between the substrate-facing surface of the element and the shield during electroplating. The substrate-facing surface of the shield may be contoured such that the distance from different positions of the shield to the substrate is varied.

Abstract: An apparatus for electroplating metal on a semiconductor substrate with improved plating uniformity includes in one aspect: a plating chamber configured to contain an electrolyte and an anode; a substrate holder configured to hold the semiconductor substrate; and an ionically resistive ionically permeable element comprising a substantially planar substrate-facing surface and an opposing surface, wherein the element allows for flow of ionic current towards the substrate during electroplating, and wherein the element comprises a region having varied local resistivity. In one example the resistivity of the element is varied by varying the thickness of the element. In some embodiments the thickness of the element is gradually reduced in a radial direction from the edge of the element to the center of the element. The provided apparatus and methods are particularly useful for electroplating metal in WLP recessed features.

Abstract: An apparatus for electroplating metal on a substrate while controlling plating uniformity includes in one aspect: a plating chamber having anolyte and catholyte compartments separated by a membrane; a primary anode positioned in the anolyte compartment; an ionically resistive ionically permeable element positioned between the membrane and a substrate in the catholyte compartment; and a secondary electrode configured to donate and/or divert plating current to and/or from the substrate, wherein the secondary electrode is positioned such that the donated and/or diverted plating current does not cross the membrane separating the anolyte and catholyte compartments, but passes through the ionically resistive ionically permeable element. In some embodiments the secondary electrode is an azimuthally symmetrical anode (e.g., a ring positioned in a separate compartment around the periphery of the plating chamber) that can be dynamically controlled during electroplating.

Abstract: Disclosed herein are methods of electroplating which may include placing a substrate, an anode, and an electroplating solution in an electroplating cell such that the substrate and the anode are located on opposite sides of a fluidically-permeable plate, setting the configuration of one or more seals which, when in their sealing configuration, substantially seal pores of the fluidically-permeable plate, and applying an electrical potential between the anode and the first substrate sufficient to cause electroplating on the first substrate such that the rate of electroplating in an edge region of the first substrate is affected by the configuration of the one or more seals. Also disclosed herein are apparatuses for electroplating which may include one or more seals for substantially sealing a subset of the pores in a fluidically-permeable plate whose sealing configuration affects a rate of electroplating in an edge region of the substrate.