Abstract: A technique for tracking changes in bias conditions of a microelectromechanical system (MEMS) device includes applying an electrode bias signal to an electrode of the MEMS device. The technique includes applying a mass bias signal to a mass of the MEMS device suspended from a substrate of the MEMS device. The technique includes generating the mass bias signal based on a target mass-to-electrode bias signal level and a signal level of the electrode bias signal.

Abstract: A method for compensating for strain on a MEMS device includes generating a signal indicative of a strain on the MEMS device in a first mode of operating a system including the MEMS device. The method includes compensating for the strain in a second mode of operating the system based on the signal. Generating the signal may include comparing an indicator of a resonant frequency of the MEMS device to a predetermined resonant frequency of the MEMS device. Generating the signal may include comparing a first output of a strain-sensitive device to a second output of a strain-insensitive device and generating an indicator thereof. Generating the signal may include sensing a first capacitive transduction of strain-sensitive electrodes of the MEMS device in the first mode and generating the signal based thereon. The strain-sensitive electrodes of the MEMS device may be disabled in the second mode.

Abstract: An apparatus includes a microelectromechanical system (MEMS) device configured as part of an oscillator. The MEMS device includes a mass suspended from a substrate of the MEMS, a first electrode configured to provide a first signal based on a displacement of the mass, and a second electrode configured to receive a second signal based on the first signal. The apparatus includes an amplifier coupled to the first electrode and a first node. The amplifier is configured to generate an output signal, the output signal being based on the first signal and a first gain. The apparatus includes an attenuator configured to attenuate the output signal based on a second gain and provide as the second signal an attenuated version of the output signal.

Abstract: A method for compensating for strain on a MEMS device includes generating a signal indicative of a strain on the MEMS device in a first mode of operating a system including the MEMS device. The method includes compensating for the strain in a second mode of operating the system based on the signal. Generating the signal may include comparing an indicator of a resonant frequency of the MEMS device to a predetermined resonant frequency of the MEMS device. Generating the signal may include comparing a first output of a strain-sensitive device to a second output of a strain-insensitive device and generating an indicator thereof. Generating the signal may include sensing a first capacitive transduction of strain-sensitive electrodes of the MEMS device in the first mode and generating the signal based thereon. The strain-sensitive electrodes of the MEMS device may be disabled in the second mode.

Abstract: A technique for tracking changes in bias conditions of a microelectromechanical system (MEMS) device includes applying an electrode bias signal to an electrode of the MEMS device. The technique includes applying a mass bias signal to a mass of the MEMS device suspended from a substrate of the MEMS device. The technique includes generating the mass bias signal based on a target mass-to-electrode bias signal level and a signal level of the electrode bias signal.