Patents by Inventor Aaron Gin

Aaron Gin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Strained layer superlattice focal plane array having a planar structure
    Patent number: 8293566
    Abstract: An infrared focal plane array (FPA) is disclosed which utilizes a strained-layer superlattice (SLS) formed of alternating layers of InAs and InxGa1-xSb with 0?x?0.5 epitaxially grown on a GaSb substrate. The FPA avoids the use of a mesa structure to isolate each photodetector element and instead uses impurity-doped regions formed in or about each photodetector for electrical isolation. This results in a substantially-planar structure in which the SLS is unbroken across the entire width of a 2-D array of the photodetector elements which are capped with an epitaxially-grown passivation layer to reduce or eliminate surface recombination. The FPA has applications for use in the wavelength range of 3-25 ?m.
    Type: Grant
    Filed: June 15, 2010
    Date of Patent: October 23, 2012
    Assignee: Sandia Corporation
    Inventors: Jin K. Kim, Malcolm S. Carroll, Aaron Gin, Phillip F. Marsh, Erik W. Young, Michael J. Cich
  • Strained-layer superlattice focal plane array having a planar structure
    Patent number: 7755079
    Abstract: An infrared focal plane array (FPA) is disclosed which utilizes a strained-layer superlattice (SLS) formed of alternating layers of InAs and InxGa1?xSb with 0?x?0.5 epitaxially grown on a GaSb substrate. The FPA avoids the use of a mesa structure to isolate each photodetector element and instead uses impurity-doped regions formed in or about each photodetector for electrical isolation. This results in a substantially-planar structure in which the SLS is unbroken across the entire width of a 2-D array of the photodetector elements which are capped with an epitaxially-grown passivation layer to reduce or eliminate surface recombination. The FPA has applications for use in the wavelength range of 3-25 ?m.
    Type: Grant
    Filed: August 17, 2007
    Date of Patent: July 13, 2010
    Assignee: Sandia Corporation
    Inventors: Jin K. Kim, Malcolm S. Carroll, Aaron Gin, Phillip F. Marsh, Erik W. Young, Michael J. Cich
  • Strained-Layer Superlattice Focal Plane Array Having a Planar Structure
    Publication number: 20090045395
    Abstract: An infrared focal plane array (FPA) is disclosed which utilizes a strained-layer superlattice (SLS) formed of alternating layers of InAs and InxGa1?xSb with 0?x?0.5 epitaxially grown on a GaSb substrate. The FPA avoids the use of a mesa structure to isolate each photodetector element and instead uses impurity-doped regions formed in or about each photodetector for electrical isolation. This results in a substantially-planar structure in which the SLS is unbroken across the entire width of a 2-D array of the photodetector elements which are capped with an epitaxially-grown passivation layer to reduce or eliminate surface recombination. The FPA has applications for use in the wavelength range of 3-25 ?m.
    Type: Application
    Filed: August 17, 2007
    Publication date: February 19, 2009
    Inventors: Jin K. Kim, Malcolm S. Carroll, Aaron Gin, Phillip F. Marsh, Erik W. Young, Michael J. Cich