Patents by Inventor Aaron Jannusch

Aaron Jannusch has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240078153
    Abstract: Memory devices, systems including memory devices, and methods of operating memory devices are described, in which a host device may access a group of memory cells (e.g., portion of an array configurable to store ECC parity bits) otherwise reserved for ECC functionality of a memory device. The memory device may include a register to indicate whether its ECC functionality is enabled or disabled. When the register indicates the ECC functionality is disabled, the memory device may increase a storage capacity available to the host device by making the group of memory cells available for user-accessible data. Additionally or alternatively, the memory device may store metadata associated with various operational aspects of the memory device in the group of memory cells. Moreover, the memory device may modify a burst length to accommodate additional information to be stored in or read from the group of memory cells.
    Type: Application
    Filed: May 8, 2023
    Publication date: March 7, 2024
    Inventors: Aaron Jannusch, Brett K. Dodds, Debra M. Bell, Joshua E. Alzheimer, Scott E. Smith
  • Publication number: 20240070007
    Abstract: Memory with fail indicators, and associated systems, devices, and methods are disclosed herein. In one embodiment, a system includes a plurality of memory systems and a host device. At least one of the memory systems includes a fail indicator connected to the host device via a side channel of the system. The host device is configured to detect an occurrence of a failure on the at least one memory system and to initiate activation of the fail indicator. The side channel can be an I2C or I3C side channel. The fail indicator, when activated, can provide a visual indication of the failure. For example, the fail indicator can include an LED that can be activated to emit light and provide an indication of the failure. A color of the light can correspond to a type, occurrence, or location of the failure on the at least one memory system.
    Type: Application
    Filed: July 18, 2023
    Publication date: February 29, 2024
    Inventors: Aaron Jannusch, Mow Yiak Goh, Robin K. Mitra
  • Patent number: 11687403
    Abstract: Memory devices, systems including memory devices, and methods of operating memory devices are described, in which a host device may access a group of memory cells (e.g., portion of an array configurable to store ECC parity bits) otherwise reserved for ECC functionality of a memory device. The memory device may include a register to indicate whether its ECC functionality is enabled or disabled. When the register indicates the ECC functionality is disabled, the memory device may increase a storage capacity available to the host device by making the group of memory cells available for user-accessible data. Additionally or alternatively, the memory device may store metadata associated with various operational aspects of the memory device in the group of memory cells. Moreover, the memory device may modify a burst length to accommodate additional information to be stored in or read from the group of memory cells.
    Type: Grant
    Filed: June 17, 2021
    Date of Patent: June 27, 2023
    Assignee: Micron Technology, Inc.
    Inventors: Aaron Jannusch, Brett K. Dodds, Debra M. Bell, Joshua E. Alzheimer, Scott E. Smith
  • Publication number: 20210311822
    Abstract: Memory devices, systems including memory devices, and methods of operating memory devices are described, in which a host device may access a group of memory cells (e.g., portion of an array configurable to store ECC parity bits) otherwise reserved for ECC functionality of a memory device. The memory device may include a register to indicate whether its ECC functionality is enabled or disabled. When the register indicates the ECC functionality is disabled, the memory device may increase a storage capacity available to the host device by making the group of memory cells available for user-accessible data. Additionally or alternatively, the memory device may store metadata associated with various operational aspects of the memory device in the group of memory cells. Moreover, the memory device may modify a burst length to accommodate additional information to be stored in or read from the group of memory cells.
    Type: Application
    Filed: June 17, 2021
    Publication date: October 7, 2021
    Inventors: Aaron Jannusch, Brett K. Dodds, Debra M. Bell, Joshua E. Alzheimer, Scott E. Smith
  • Patent number: 11042436
    Abstract: Memory devices, systems including memory devices, and methods of operating memory devices are described, in which a host device may access a group of memory cells (e.g., portion of an array configurable to store ECC parity bits) otherwise reserved for ECC functionality of a memory device. The memory device may include a register to indicate whether its ECC functionality is enabled or disabled. When the register indicates the ECC functionality is disabled, the memory device may increase a storage capacity available to the host device by making the group of memory cells available for user-accessible data. Additionally or alternatively, the memory device may store metadata associated with various operational aspects of the memory device in the group of memory cells. Moreover, the memory device may modify a burst length to accommodate additional information to be stored in or read from the group of memory cells.
    Type: Grant
    Filed: August 29, 2019
    Date of Patent: June 22, 2021
    Assignee: Micron Technology, Inc.
    Inventors: Aaron Jannusch, Brett K. Dodds, Debra M. Bell, Joshua E. Alzheimer, Scott E. Smith
  • Publication number: 20210064460
    Abstract: Memory devices, systems including memory devices, and methods of operating memory devices are described, in which a host device may access a group of memory cells (e.g., portion of an array configurable to store ECC parity bits) otherwise reserved for ECC functionality of a memory device. The memory device may include a register to indicate whether its ECC functionality is enabled or disabled. When the register indicates the ECC functionality is disabled, the memory device may increase a storage capacity available to the host device by making the group of memory cells available for user-accessible data. Additionally or alternatively, the memory device may store metadata associated with various operational aspects of the memory device in the group of memory cells. Moreover, the memory device may modify a burst length to accommodate additional information to be stored in or read from the group of memory cells.
    Type: Application
    Filed: August 29, 2019
    Publication date: March 4, 2021
    Inventors: Aaron Jannusch, Brett K. Dodds, Debra M. Bell, Joshua M. Alzheimer, Scott E. Smith