Abstract: A solid-state photomultiplier is provided for use in imaging detectors. The solid-state photomultiplier includes a plurality of microcells configured to detect impinging photons. Each of the plurality of microcells further includes a photodiode coupled to a common electrode through a quenching resistor and configured to convert the impinging photons into electrical signals, and an impedance device coupled in parallel with the quenching resistor so as to reduce overall quenching impedance at high frequency. Further, techniques are provided for implementing low impedance device with controllable value to the SSPM for optimized timing resolution.

Abstract: A technique is provided for forming a multi-layer radiation detector. The technique includes a charge-integrating photodetector layer provided in conjunction with a photon-counting photodetector layer. In one embodiment, a plurality of photon-counting photosensor elements are disposed adjacent to a plurality of charge-integrating photosensor elements of the respective layers. Both sets of elements are connected to readout circuitry and a data acquisition system. The detector arrangement may be used for energy discriminating computed tomography imaging and similar computed tomography systems.

Abstract: A pixel structure for a flat panel detector is constructed in which the diode silicon and the FET silicon are simultaneously etched to form isolated structures (array photodiodes, I/O elements, and so on) in which the edges or perimeters of the diode silicon features are self-aligned to the underlying FET SI features. The full, as-deposited, thickness of the FET gate dielectric and (at least) part of the FET silicon layer remains underneath the diode silicon across the entirety of the flat panel detector.

Abstract: A solid-state photomultiplier is provided for use in imaging detectors. The solid-state photomultiplier includes a plurality of microcells configured to detect impinging photons. Each of the plurality of microcells further includes a photodiode coupled to a common electrode through a quenching resistor and configured to convert the impinging photons into electrical signals, and an impedance device coupled in parallel with the quenching resistor so as to reduce overall quenching impedance at high frequency. Further, techniques are provided for implementing low impedance device with controllable value to the SSPM for optimized timing resolution.

Abstract: A technique is provided for forming a multi-layer radiation detector. The technique includes a charge-integrating photodetector layer provided in conjunction with a photon-counting photodetector layer. In one embodiment, a plurality of photon-counting photosensor elements are disposed adjacent to a plurality of charge-integrating photosensor elements of the respective layers. Both sets of elements are connected to readout circuitry and a data acquisition system. The detector arrangement may be used for energy discriminating computed tomography imaging and similar computed tomography systems.

Abstract: A pixel structure for a flat panel detector is constructed in which the diode silicon and the FET silicon are simultaneously etched to form isolated structures (array photodiodes, I/O elements, and so on) in which the edges or perimeters of the diode silicon features are self-aligned to the underlying FET SI features. The full, as-deposited, thickness of the FET gate dielectric and (at least) part of the FET silicon layer remains underneath the diode silicon across the entirety of the flat panel detector.

Abstract: A dual function detector device operates in either a normal operating mode or in an EMI correction mode to suppress effects of EMI within the detector. The detector device may be a flat panel x-ray detectors used in x-ray imaging systems. The device has a pixel architecture and panel read-out technique that enables real-time, high spatial frequency measurement of noise induced by electromagnetic radiation on a digital x-ray detector. The measurement can be used to calibrate the detector in real-time to attain artifact-free imaging in all environments, including those that contain temporally and spatially changing electromagnetic fields.

Abstract: An imaging system includes a gantry having a bore therethrough designed to receive a patient being translated through the bore an x-ray source disposed in the gantry and configured to emit x-rays toward the patient, and a detector module disposed in the gantry to receive x-rays attenuated by the patient. The detector module includes a scintillator configured to absorb the x-rays and to convert the x-rays into optical photons, a device configured to receive the optical photons and to convert the optical photons to electrical signals, and an adaptive data acquisition system (DAS) configured to switch an operating mode of the device from a charge integrating mode to a photon counting mode, and vice versa.

Abstract: A photodetector for X-ray applications includes a photodiode at each pixel location that is gated to reduce leakage of charge from the photodiode. A gate layer may be disposed around the entire peripheral edge of the detector, and maintained at a common potential with a contact layer, or at a different potential. A passivation or dielectric layer separates the gate layer from the photodiode. Leakage around the edge of the diode that can result from extended exposure to radiation is reduced by the gate layer.

Abstract: A photodetector for X-ray applications is disclosed incorporating a photodiode design with reduced leakage at each pixel location. The photodiode is of a reduced surface area and has a peripheral edge of reduced length. The length may be minimized by making the photodiode round. The diode is surrounded by a reflective layer that may act as a contact for the diode. Photons are reflected by the reflective layer back towards the reduced area diode to maintain good sensitivity. The reflective/contact layer may form a capacitor with another contact layer by disposing a dielectric layer therebetween, thereby increasing the effective capacitance of the photodiode.

Abstract: A method for monitoring the quality of a manufacturing process for making detector panels that have a plurality of pixels in a two-dimensional array includes, in each detector panel, manufacturing a set of baseline pixels and a set of test pixels. Each test pixel has an electrical component having a geometric dimension varied by an amount sufficient to introduce a measurable variation in a test that measures parameters of pixels that are dependent upon the varied dimension. The method further includes performing the test on the set of baseline pixels and the set of varied pixels, analyzing the results of the test, and adjusting parameters of the manufacturing process in accordance with the analysis.