Patents by Inventor Aaron Keiichi Horiuchi

Aaron Keiichi Horiuchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240005078
    Abstract: A system and method for efficiently designing a through silicon via (TSV) macro blocks are described. In various implementations, the circuitry of a processor executes instructions of a place and route tool that provides automatic placement of macro blocks and standard cells on an integrated circuit die based on a copy of a netlist of the integrated circuit being designed and a copy of a standard cell library that includes a variety of standard cells and macro blocks. The processor places two functional macros in the floorplan with a channel between them. In the channel, the processor places a TSV macro that includes at least one boundary cell inside of the TSV macro. The processor prevents placement of a boundary cell adjacent to at least one side of the TSV macro despite empty space exists due to no standard cells or macros about the at least one side.
    Type: Application
    Filed: June 30, 2022
    Publication date: January 4, 2024
    Inventors: Michael Edward Griffith, Aaron Keiichi Horiuchi, Donald A. Clay, Eric William Busta, Hye Jung Stanford, Kathryn E. Wilcox, Ruochen Xie, Russell Schreiber, Stephen J. Dussinger, William Edwin Laub, JR., Te-Hsuan Chen
  • Patent number: 7403885
    Abstract: Systems and methods for implementing voltage supply noise analysis for electronic circuits are disclosed. In an exemplary embodiment a computer program product executes a computer process. The computer process generates at least one spatial profile for the electronic circuit, generates at least one temporal profile for the electronic circuit, merges the at least one temporal profile and the at least one spatial profile, and determines if the electronic circuit is operating within acceptable voltage noise margins based on the merged temporal and spatial profiles.
    Type: Grant
    Filed: November 5, 2004
    Date of Patent: July 22, 2008
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Aaron Keiichi Horiuchi, Clark Douglas Burnside, Stephen LaMar Dixon, David Paul Hannum, Justin Allan Coppin