Patents by Inventor Aaron Lindenberg

Aaron Lindenberg has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Nanometer scale nonvolatile memory device and method for storing binary and quantum memory states
    Patent number: 11355697
    Abstract: Example implementations include an electronic memory device with a metallic layer having a first planar crystalline structure, a first encapsulating layer including an encapsulating material having a second planar crystalline structure, and disposed adjacent to a first planar surface of the metallic layer, and a second encapsulating layer including the encapsulating material, and disposed adjacent to a second planar surface of the metallic layer. Example implementations also include a method of depositing graphite crystals onto a substrate to form a gate bottom layer, depositing BN crystals onto the graphite bottom layer to form a BN bottom layer, depositing tungsten ditelluride (WTe2) crystals onto the BN bottom layer to form a metallic layer, depositing the BN crystals onto the BN bottom layer and the metallic layer to form a BN top layer, and depositing the graphite crystals onto the BN top layer to form a gate top layer.
    Type: Grant
    Filed: November 24, 2020
    Date of Patent: June 7, 2022
    Assignee: The Board of Trustees of the Leland Stanford Junior University
    Inventors: Jun Xiao, Aaron Lindenberg
  • NANOMETER SCALE NONVOLATILE MEMORY DEVICE AND METHOD FOR STORING BINARY AND QUANTUM MEMORY STATES
    Publication number: 20210159398
    Abstract: Example implementations include an electronic memory device with a metallic layer having a first planar crystalline structure, a first encapsulating layer including an encapsulating material having a second planar crystalline structure, and disposed adjacent to a first planar surface of the metallic layer, and a second encapsulating layer including the encapsulating material, and disposed adjacent to a second planar surface of the metallic layer. Example implementations also include a method of depositing graphite crystals onto a substrate to form a gate bottom layer, depositing BN crystals onto the graphite bottom layer to form a BN bottom layer, depositing tungsten ditelluride (WTe2) crystals onto the BN bottom layer to form a metallic layer, depositing the BN crystals onto the BN bottom layer and the metallic layer to form a BN top layer, and depositing the graphite crystals onto the BN top layer to form a gate top layer.
    Type: Application
    Filed: November 24, 2020
    Publication date: May 27, 2021
    Applicant: The Board of Trustees of the Leland Stanford Junior University
    Inventors: Jun Xiao, Aaron Lindenberg