Abstract: Semiconductor processing methods and apparatuses are provided. Some methods include providing a substrate to a processing chamber, the substrate having a semiconductor portion and a dielectric portion, modifying the semiconductor portion of the substrate selective to the dielectric portion of the substrate by flowing a first process gas comprising a first halogen species onto the substrate and providing a first activation energy to cause the first halogen species to preferentially adsorb on the semiconductor portion relative to the dielectric portion to form a first halogenated semiconductor, and removing the first halogenated semiconductor by flowing a second process gas comprising a second halogen species onto the substrate and providing a second activation energy, without providing a plasma, to cause the second halogen species to react with the first halogenated semiconductor and cause the first halogenated semiconductor to desorb from the substrate.

Abstract: Indium gallium zinc oxide can be etched by providing a wafer having a layer of indium gallium zinc oxide to a processing chamber, heating the wafer to a first temperature, flowing a first chemical species comprising a fluoride to create a layer of indium gallium zinc oxyfluoride, and removing the layer of indium gallium zinc oxyfluoride by flowing a second chemical species comprising an alkyl aluminum halide, an aluminum alkalide, an organoaluminium compound, a diketone, silicon halide, silane, halogenated silane, or alkyl silicon halide.

Abstract: Channel material is conformally deposited along sidewalls of one or more etched features of a mold stack in fabricating a three-terminal memory device. The channel material is deposited in recessed regions and non-recessed regions of the one or more etched features. A sacrificial liner is deposited on the channel material. A directional etch removes the sacrificial liner from non-recessed regions of the one or more etched features. An isotropic etch removes the channel material from non-recessed regions of the one or more etched features, leaving the channel material and the sacrificial liner intact in the recessed regions. The sacrificial liner is removed, leaving the channel material intact and isolated with minimal loss of channel material from over-etch.

Abstract: Molybdenum is etched in a highly controllable manner by performing one or more etch cycles, where each cycle involves exposing the substrate having a molybdenum layer to an oxygen-containing reactant to form molybdenum oxide followed by treatment with boron trichloride to convert molybdenum oxide to a volatile molybdenum oxychloride with subsequent treatment of the substrate with a fluorine-containing reactant to remove boron oxide that has formed in a previous reaction, from the surface of the substrate. In some embodiments the method is performed in an absence of plasma and results in a substantially isotropic etching. The method can be used in a variety of applications in semiconductor processing, such as in wordline isolation in 3D NAND fabrication.

Abstract: Methods for forming patterned multi-layer stacks including a metal-containing layer are provided herein. Methods involve using silicon-containing non-metal materials in a multi-layer stack including one sacrificial layer to be later removed and replaced with metal while maintaining etch contrast to pattern the multi-layer stack and selectively remove the sacrificial layer prior to depositing metal. Methods involve using silicon oxycarbide in lieu of silicon nitride, and a sacrificial non-metal material in lieu of a metal-containing layer, to fabricate the multi-layer stack, pattern the multi-layer stack, selectively remove the sacrificial non-metal material to leave spaces in the stack, and deposit metal-containing material into the spaces. Sacrificial non-metal materials include silicon nitride and doped polysilicon, such as boron-doped silicon.