Patents by Inventor Aaron M. Bowser

Aaron M. Bowser has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Writer pole formation
    Patent number: 9805756
    Abstract: Implementations disclosed herein provide a method of reducing the topography at the alignment and overlay marks area during the writer pole photolithography process in order to reduce the wafer scale variation and reduce the writer pole photolithography process rework rate. In one implementation, an intermediate stage of a wafer for writer pole formation is generated by removing a part of at least one metallic writer pole layer on top of an intermediate stage writer pole wafer to form a recovery trench, depositing an optically transparent material on top of the wafer, wherein the thickness of the optically transparent material is higher than a target recovery trench topography, forming a photoresist pattern on top of the optically transparent material over the recovery trench, etching the optically transparent material, and removing the photoresist pattern and at least part of the remaining optically transparent material.
    Type: Grant
    Filed: July 5, 2016
    Date of Patent: October 31, 2017
    Assignee: SEAGATE TECHNOLOGY LLC
    Inventors: Yi Liu, Aaron M. Bowser, Dan Yu, Xiaohong Zhang
  • WRITER POLE FORMATION
    Publication number: 20160314810
    Abstract: Implementations disclosed herein provide a method of reducing the topography at the alignment and overlay marks area during the writer pole photolithography process in order to reduce the wafer scale variation and reduce the writer pole photolithography process rework rate. In one implementation, an intermediate stage of a wafer for writer pole formation is generated by removing a part of at least one metallic writer pole layer on top of an intermediate stage writer pole wafer to form a recovery trench, depositing an optically transparent material on top of the wafer, wherein the thickness of the optically transparent material is higher than a target recovery trench topography, forming a photoresist pattern on top of the optically transparent material over the recovery trench, etching the optically transparent material, and removing the photoresist pattern and at least part of the remaining optically transparent material.
    Type: Application
    Filed: July 5, 2016
    Publication date: October 27, 2016
    Inventors: Yi Liu, Aaron M. Bowser, Dan Yu, Xiaohong Zhang
  • Writer pole formation
    Patent number: 9411234
    Abstract: Implementations disclosed herein provide a method of reducing the topography at the alignment and overlay marks area during the writer pole photolithography process in order to reduce the wafer scale variation and reduce the writer pole photolithography process rework rate. In one implementation, an intermediate stage of a wafer for writer pole formation is generated by removing a part of at least one metallic writer pole layer on top of an intermediate stage writer pole wafer to form a recovery trench, depositing an optically transparent material on top of the wafer, wherein the thickness of the optically transparent material is higher than a target recovery trench topography, forming a photoresist pattern on top of the optically transparent material over the recovery trench, etching the optically transparent material, and removing the photoresist pattern and at least part of the remaining optically transparent material.
    Type: Grant
    Filed: October 1, 2014
    Date of Patent: August 9, 2016
    Assignee: SEAGATE TECHNOLOGY LLC
    Inventors: Yi Liu, Aaron M. Bowser, Dan Yu, Xiaohong Zhang
  • WRITER POLE FORMATION
    Publication number: 20160099019
    Abstract: Implementations disclosed herein provide a method of reducing the topography at the alignment and overlay marks area during the writer pole photolithography process in order to reduce the wafer scale variation and reduce the writer pole photolithography process rework rate. In one implementation, an intermediate stage of a wafer for writer pole formation is generated by removing a part of at least one metallic writer pole layer on top of an intermediate stage writer pole wafer to form a recovery trench, depositing an optically transparent material on top of the wafer, wherein the thickness of the optically transparent material is higher than a target recovery trench topography, forming a photoresist pattern on top of the optically transparent material over the recovery trench, etching the optically transparent material, and removing the photoresist pattern and at least part of the remaining optically transparent material.
    Type: Application
    Filed: October 1, 2014
    Publication date: April 7, 2016
    Inventors: Yi Liu, Aaron M. Bowser, Dan Yu, Xiaohong Zhang