Patents by Inventor Aaron Mandell
Aaron Mandell has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20150014232Abstract: The invention relates to membrane modules and applications therefor. In particular, the invention relates to the construction of membrane modules for use in forward osmosis, heat exchange, and distillation processes.Type: ApplicationFiled: August 8, 2012Publication date: January 15, 2015Applicant: OASYS WATER, INC.Inventors: Robert L. McGinnis, Aaron Mandell, Richard Stover
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Patent number: 8795525Abstract: Systems and methods for the storage of potential energy that may be readily converted to electrical power delivered to a customer or grid distribution are disclosed. This method may involve the use of salinity gradients, or as they may be also described, osmotic pressure gradients or differences between two solutions, to produce hydraulic pressure in a concentrated solution, allowing for the generation of power.Type: GrantFiled: December 3, 2009Date of Patent: August 5, 2014Assignee: Oasys Water, Inc.Inventors: Robert McGinnis, Aaron Mandell
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Publication number: 20100183903Abstract: Systems and methods for the storage of potential energy that may be readily converted to electrical power delivered to a customer or grid distribution are disclosed. This method may involve the use of salinity gradients, or as they may be also described, osmotic pressure gradients or differences between two solutions, to produce hydraulic pressure in a concentrated solution, allowing for the generation of power.Type: ApplicationFiled: December 3, 2009Publication date: July 22, 2010Inventors: Robert McGinnis, Aaron Mandell
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Patent number: 7582893Abstract: The subject invention provides systems and methods that facilitate formation of semiconductor memory devices comprising memory cells with one or more injecting bilayer electrodes. Memory arrays generally comprise bit cells that have two discrete components; a memory element and a selection element, such as, for example, a diode. The invention increases the efficiency of a memory device by forming memory cells with selection diodes comprising a bilayer electrode. Memory cells are provided comprising bilayer cathodes and/or bilayer anodes that facilitate a significant improvement in charge injection into the diode layers of memory cells. The increased charge (e.g. electrons or holes) density in the diode layers of the selected memory cells results in improved memory cell switching times and lowers the voltage required for the memory cell to operate, thereby, creating a more efficient memory cell.Type: GrantFiled: September 15, 2005Date of Patent: September 1, 2009Assignee: Spansion LLCInventors: Igor Sokolik, Richard P. Kingsborough, Aaron Mandell
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Patent number: 7307338Abstract: Systems and methodologies are provided for forming three dimensional memory structures that are fabricated from blocks of individual polymer memory cells stacked on top of each other. Such a polymer memory structure can be formed on top of control component circuitries employed for programming a plurality of memory cells that form the stacked three dimensional structure. Such an arrangement provides for an efficient placement of polymer memory cell on a wafer surface, and increases amount of die space available for circuit design.Type: GrantFiled: July 26, 2004Date of Patent: December 11, 2007Assignee: Spansion LLCInventors: Aaron Mandell, Juri H Krieger, Igor Sokolik, Richard P Kingsborough, Stuart Spitzer
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Patent number: 7199394Abstract: Systems and methodologies are provided for of enabling a polymer memory cell to exhibit variable retention times for stored data therein. Such setting of retention time can depend upon a programming mode and/or type of material employed in the polymer memory cell. Short retention times can be obtained by programming the polymer memory cell via a low current or a low electrical field. Similarly, long retention times can be obtained by employing a high current or electrical field to program the polymer memory cell.Type: GrantFiled: August 17, 2004Date of Patent: April 3, 2007Assignee: Spansion LLCInventors: Aaron Mandell, Michael A VanBuskirk, Stuart Spitzer, Juri H Krieger
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Publication number: 20070058426Abstract: The subject invention provides systems and methods that facilitate formation of semiconductor memory devices comprising memory cells with one or more injecting bilayer electrodes. Memory arrays generally comprise bit cells that have two discrete components; a memory element and a selection element, such as, for example, a diode. The invention increases the efficiency of a memory device by forming memory cells with selection diodes comprising a bilayer electrode. Memory cells are provided comprising bilayer cathodes and/or bilayer anodes that facilitate a significant improvement in charge injection into the diode layers of memory cells. The increased charge (e.g. electrons or holes) density in the diode layers of the selected memory cells results in improved memory cell switching times and lowers the voltage required for the memory cell to operate, thereby, creating a more efficient memory cell.Type: ApplicationFiled: September 15, 2005Publication date: March 15, 2007Applicant: SPANSION LLCInventors: Igor Sokolik, Richard Kingsborough, Aaron Mandell
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Patent number: 7183141Abstract: A programmable interconnect structure and method of operating the same provides a programmable interconnection between electrical contacts. The interconnect includes material that has a reversibly programmable resistance. The material includes a molecular matrix with ionic complexes distributed through the molecular matrix. Application of an electrical field or electric current causes the molecular composite material to assume a desired resistivity (or conductivity) state. This state is retained by the molecular composite material to thus form a conductive or a non-conductive path between the electrical contacts.Type: GrantFiled: December 30, 2004Date of Patent: February 27, 2007Assignee: Spansion LLCInventors: Vladimir Bulovic, Aaron Mandell, Andrew Perlman
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Patent number: 7157750Abstract: A novel memory cell is provided with an active region including a molecular system and ionic complexes distributed in the molecular system. A pair of write electrodes are arranged for writing information to the memory cell. The active region is responsive to an electric field applied between the pair of write electrodes for switching between an on state and an off state. The active region has a high impedance in the off state and a low impedance in the on state. A pair of read electrodes is used to detect whether the active region is in the on state or in the off state to read the information from the memory cell. Read electrodes may be made of different materials having different work functions to reduce leakage current.Type: GrantFiled: July 27, 2004Date of Patent: January 2, 2007Assignee: Spansion LLCInventors: Vladimer Bulovic, Aaron Mandell, Andrew Perlman
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Patent number: 7145793Abstract: A novel switching device is provided with an active region arranged between first and second electrodes and including a molecular system and ionic complexes distributed in the system. A control electrode is provided for controlling an electric field applied to the active region, which switches between a high-impedance state and a low-impedance state when the electrical field having a predetermined polarity and intensity is applied for a predetermined time.Type: GrantFiled: June 21, 2004Date of Patent: December 5, 2006Assignee: Spansion, Inc.Inventors: Vladimir Bulovic, Aaron Mandell, Andrew Perlman
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Publication number: 20060038169Abstract: Systems and methodologies are provided for of enabling a polymer memory cell to exhibit variable retention times for stored data therein. Such setting of retention time can depend upon a programming mode and/or type of material employed in the polymer memory cell. Short retention times can be obtained by programming the polymer memory cell via a low current or a low electrical field. Similarly, long retention times can be obtained by employing a high current or electrical field to program the polymer memory cell.Type: ApplicationFiled: August 17, 2004Publication date: February 23, 2006Applicant: SPANSION, LLCInventors: Aaron Mandell, Michael VanBuskirk, Stuart Spitzer, Juri Krieger
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Publication number: 20050116256Abstract: A novel memory cell is provided with an active region including a molecular system and ionic complexes distributed in the molecular system. A pair of write electrodes are arranged for writing information to the memory cell. The active region is responsive to an electric field applied between the pair of write electrodes for switching between an on state and an off state. The active region has a high impedance in the off state and a low impedance in the on state. A pair of read electrodes is used to detect whether the active region is in the on state or in the off state to read the information from the memory cell. Read electrodes may be made of different materials having different work functions to reduce leakage current.Type: ApplicationFiled: July 27, 2004Publication date: June 2, 2005Applicant: Advanced Micro Devices, Inc.Inventors: Vladimir Bulovic, Aaron Mandell, Andrew Perlman
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Patent number: 6844608Abstract: A programmable interconnect structure and method of operating the same provides a programmable interconnection between electrical contacts. The interconnect includes material that has a reversibly programmable resistance. The material includes a molecular matrix with ionic complexes distributed through the molecular matrix. Application of an electrical field or electric current causes the molecular composite material to assume a desired resistivity (or conductivity) state. This state is retained by the molecular composite material to thus form a conductive or a non-conductive path between the electrical contacts.Type: GrantFiled: May 7, 2002Date of Patent: January 18, 2005Assignee: Advanced Micro Devices, Inc.Inventors: Vladimir Bulovic, Aaron Mandell, Andrew Perlman
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Patent number: 6809955Abstract: A novel switching device is provided with an active region arranged between first and second electrodes and including a molecular system and ionic complexes distributed in the system. A control electrode is provided for controlling an electric field applied to the active region, which switches between a high-impedance state and a low-impedance state when the electrical field having a predetermined polarity and intensity is applied for a predetermined time.Type: GrantFiled: May 7, 2002Date of Patent: October 26, 2004Assignee: Advanced Micro Devices, Inc.Inventors: Vladimir Bulovic, Aaron Mandell, Andrew Perlman
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Patent number: 6781868Abstract: A novel memory cell is provided with an active region including a molecular system and ionic complexes distributed in the molecular system. A pair of write electrodes are arranged for writing information to the memory cell. The active region is responsive to an electric field applied between the pair of write electrodes for switching between an on state and an off state. The active region has a high impedance in the off state and a low impedance in the on state. A pair of read electrodes is used to detect whether the active region is in the on state or in the off state to read the information from the memory cell. Read electrodes may be made of different materials having different work functions to reduce leakage current.Type: GrantFiled: May 7, 2002Date of Patent: August 24, 2004Assignee: Advanced Micro Devices, Inc.Inventors: Vladimir Bulovic, Aaron Mandell, Andrew Perlman
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Patent number: 6627944Abstract: A floating gate memory device has a floating gate and an insulating layer on the floating gate. A control gate is on the insulating layer. The insulating layer is made up of a molecular matrix with ionic complexes distributed in the molecular matrix. By the application of an electric field, the ionic complexes are dissociable in the molecular matrix to change the resistivity (or conductivity) of the insulating layer. By switching between a high resistivity (low conductivity) state, where charge is retained by the floating gate, to a low resistivity (high conductivity) state, the charge stored on the floating gate can readily drained off to the gate electrode.Type: GrantFiled: May 7, 2002Date of Patent: September 30, 2003Assignee: Advanced Micro Devices, Inc.Inventors: Aaron Mandell, Andrew Perlman
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Publication number: 20020163829Abstract: A novel switching device is provided with an active region arranged between first and second electrodes and including a molecular system and ionic complexes distributed in the system. A control electrode is provided for controlling an electric field applied to the active region, which switches between a high-impedance state and a low-impedance state when the electrical field having a predetermined polarity and intensity is applied for a predetermined time.Type: ApplicationFiled: May 7, 2002Publication date: November 7, 2002Applicant: Coatue CorporationInventors: Vladimir Bulovic, Aaron Mandell, Andrew Perlman
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Publication number: 20020163030Abstract: A floating gate memory device has a floating gate and an insulating layer on the floating gate. A control gate is on the insulating layer. The insulating layer is made up of a molecular matrix with ionic complexes distributed in the molecular matrix. By the application of an electric field, the ionic complexes are dissociable in the molecular matrix to change the resistivity (or conductivity) of the insulating layer. By switching between a high resistivity (low conductivity) state, where charge is retained by the floating gate, to a low resistivity (high conductivity) state, the charge stored on the floating gate can readily drained off to the gate electrode.Type: ApplicationFiled: May 7, 2002Publication date: November 7, 2002Applicant: Coatue CorporationInventors: Aaron Mandell, Andrew Perlman
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Publication number: 20020163830Abstract: A novel memory cell is provided with an active region including a molecular system and ionic complexes distributed in the molecular system. A pair of write electrodes are arranged for writing information to the memory cell. The active region is responsive to an electric field applied between the pair of write electrodes for switching between an on state and an off state. The active region has a high impedance in the off state and a low impedance in the on state. A pair of read electrodes is used to detect whether the active region is in the on state or in the off state to read the information from the memory cell. Read electrodes may be made of different materials having different work functions to reduce leakage current.Type: ApplicationFiled: May 7, 2002Publication date: November 7, 2002Applicant: Coatue CorporationInventors: Vladimir Bulovic, Aaron Mandell, Andrew Perlman
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Publication number: 20020163057Abstract: A programmable interconnect structure and method of operating the same provides a programmable interconnection between electrical contacts. The interconnect includes material that has a reversibly programmable resistance. The material includes a molecular matrix with ionic complexes distributed through the molecular matrix. Application of an electrical field or electric current causes the molecular composite material to assume a desired resistivity (or conductivity) state. This state is retained by the molecular composite material to thus form a conductive or a non-conductive path between the electrical contacts.Type: ApplicationFiled: May 7, 2002Publication date: November 7, 2002Applicant: Coatue CorporationInventors: Vladimir Bulovic, Aaron Mandell, Andrew Perlman