Abstract: A thermal interface structure may be formed comprising a thermally conductive substrate having a first surface and an opposing second surface, a first liquid metal layer on the first surface of the thermally conductive substrate, and a second liquid metal layer on the second surface of the thermally conductive substrate. The thermal interface structure may be used in an integrated circuit assembly or package between at least one integrated circuit device and a heat dissipation device.

Abstract: Embodiments of the present disclosure may generally relate to systems, apparatuses, techniques, and/or processes directed to packages that include stacked dies that use thermal conductivity features including thermally conductive through silicon vias (TSVs) filled with thermally conductive material located in passive areas of a first die to route heat from a first die away from a second die that is coupled with the first die. In embodiments, the first die may be referred to as a base die. Embodiments may include thermal blocks in the form of dummy dies that include TSVs at least partially filled with thermal energy conducting material such as copper, solder, or other alloy.

Abstract: Embodiments include semiconductor packages. A semiconductor package includes dies on a package substrate, an integrated heat spreader (IHS) with a lid and sidewalls over the dies and package substrate, and a heatsink and a thermal interface material respectively on the IHS. The semiconductor package includes a vapor chamber defined by a surface of the package substrate and surfaces of the lid and sidewalls, and a wick layer in the vapor chamber. The wick layer is on the dies, package substrate, and IHS, where the vapor chamber has a vapor space defined by surfaces of the wick layer and lid of the IHS. The sidewalls are coupled to the package substrate with a sealant that hermetically seals the vapor chamber with the surfaces of the package substrate and the sidewalls and lid. The wick layer has a uniform or non-uniform thickness, and has porous materials including metals, powders, or graphite.

Abstract: Embodiments disclosed herein include an electronics package and methods of forming such electronics packages. In an embodiment, the electronics package comprises a package substrate, and a first die coupled to the package substrate. In an embodiment, a cavity is formed through the package substrate. In an embodiment, the cavity is within a footprint of the first die. In an embodiment, the electronics package further comprises a thermal stack in the cavity. In an embodiment, the thermal stack contacts the first die.

Abstract: To address technical problems facing silicon transient thermal management, a thermal interface material (TIM) may be used to provide improved thermal conduction. The TIM may include a liquid metal (LM) TIM, which may provide a significant reduction in thermal resistance, such as a thermal resistance RTIM?0.01-0.025° C.-cm2/W. The LM TIM may be applied using a presoaked applicator, such as an open-cell polyurethane foam applicator that has been presoaked in a controlled amount of LM TIM. This LM presoaked applicator is then used to apply the LM TIM to one or more target thermal surfaces, thereby providing thermal and mechanical coupling between the LM TIM and the thermal surface. The resulting thermal surface and thermally conductive LM TIM may be used to improve thermal conduction for various silicon-based devices, including various high-power, high-performance system-on-chip (SoC) packages, such as may be used in portable consumer products.

Abstract: Embodiments of the present disclosure may generally relate to systems, apparatuses, techniques, and/or processes directed to packages that include stacked dies that use thermal conductivity features including thermally conductive through silicon vias (TSVs) filled with thermally conductive material located in passive areas of a first die to route heat from a first die away from a second die that is coupled with the first die. In embodiments, the first die may be referred to as a base die. Embodiments may include thermal blocks in the form of dummy dies that include TSVs at least partially filled with thermal energy conducting material such as copper, solder, or other alloy.

Abstract: Embodiments disclosed herein include electronic packages. In an embodiment, an electronic package comprises a package substrate and an interposer over the package substrate. In an embodiment, the interposer comprises a ceramic. In an embodiment, the electronic package further comprises a first die over the interposer and a second die over the interposer. In an embodiment, the first die and the second die are electrically coupled together by the interposer. In an embodiment, the electronic package further comprises an integrated heat spreader (IHS) over the first die and the second die.

Abstract: Embodiments of the present disclosure may generally relate to systems, apparatuses, techniques, and/or processes directed to packages that include stacked dies that use thermal conductivity features including thermally conductive through silicon vias (TSVs) filled with thermally conductive material located in passive areas of a first die to route heat from a first die away from a second die that is coupled with the first die. In embodiments, the first die may be referred to as a base die. Embodiments may include thermal blocks in the form of dummy dies that include TSVs at least partially filled with thermal energy conducting material such as copper, solder, or other alloy.

Abstract: Embodiments include semiconductor packages. A semiconductor package includes dies on a package substrate, an integrated heat spreader (IHS) with a lid and sidewalls over the dies and package substrate, and a heatsink and a thermal interface material respectively on the IHS. The semiconductor package includes a vapor chamber defined by a surface of the package substrate and surfaces of the lid and sidewalls, and a wick layer in the vapor chamber. The wick layer is on the dies, package substrate, and IHS, where the vapor chamber has a vapor space defined by surfaces of the wick layer and lid of the IHS. The sidewalls are coupled to the package substrate with a sealant that hermetically seals the vapor chamber with the surfaces of the package substrate and the sidewalls and lid. The wick layer has a uniform or non-uniform thickness, and has porous materials including metals, powders, or graphite.

Abstract: A thermal interface structure may be formed comprising a thermally conductive substrate having a first surface and an opposing second surface, a first liquid metal layer on the first surface of the thermally conductive substrate, and a second liquid metal layer on the second surface of the thermally conductive substrate. The thermal interface structure may be used in an integrated circuit assembly or package between at least one integrated circuit device and a heat dissipation device.

Abstract: A thermal interface material may be formed comprising a liquid metal and a corrosion resistant filler material. The thermal interface material may be used in an integrated circuit assembly between at least one integrated circuit device and a heat dissipation device, wherein the corrosion resistant filler material changes the physical properties of the thermal interface material, which may prevent failure modes from occurring during the operation of the integrated circuit assembly and may assist in maintaining a bond line thickness between the at least one integrated circuit device and the heat dissipation device.

Abstract: To address technical problems facing silicon transient thermal management, a thermal interface material (TIM) may be used to provide improved thermal conduction. The TIM may include a liquid metal (LM) TIM, which may provide a significant reduction in thermal resistance, such as a thermal resistance RTIM?0.01-0.025 ° C.-cm2/W. The LM TIM may be applied using a presoaked applicator, such as an open-cell polyurethane foam applicator that has been presoaked in a controlled amount of LM TIM. This LM presoaked applicator is then used to apply the LM TIM to one or more target thermal surfaces, thereby providing thermal and mechanical coupling between the LM TIM and the thermal surface. The resulting thermal surface and thermally conductive LM TIM may be used to improve thermal conduction for various silicon-based devices, including various high-power, high-performance system-on-chip (SoC) packages, such as may be used in portable consumer products.

Abstract: Embodiments disclosed herein include an electronics package and methods of forming such electronics packages. In an embodiment, the electronics package comprises a package substrate, and a first die coupled to the package substrate. In an embodiment, a cavity is formed through the package substrate. In an embodiment, the cavity is within a footprint of the first die. In an embodiment, the electronics package further comprises a thermal stack in the cavity. In an embodiment, the thermal stack contacts the first die.