Abstract: A method of selectively depositing a dielectric material on a metal surface relative to a non-metal surface is disclosed. An exemplary method includes using a first reactant to selectively form desired terminal functional groups on the non-metal surface and selectively reacting a second reactant with the terminal functional groups to selectively form an organic layer on the non-metal surface.

Abstract: Provided are high quality metal-nitride, such as aluminum nitride (AlN), films for heat dissipation and heat spreading applications, methods of preparing the same, and deposition of high thermal conductivity heat spreading layers for use in RF devices such as power amplifiers, high electron mobility transistors, etc. Aspects of the inventive concept can be used to enable heterogeneously integrated compound semiconductor on silicon devices or can be used in in non-RF applications as the power densities of these highly scaled microelectronic devices continues to increase.

Abstract: This invention allows for the deposition of aluminum nitride buffer layers and templating films that greatly enhance the quality of additional aluminum nitride deposited by alternate deposit ion techniques and reduce the overall thickness of needed buffer layers. Furthermore, these films can be deposited at substrate temperatures of 400° C. and 580° C. which is considerably lower than other techniques, such as molecular beam epitaxy (MBE) and metal organic chemical vapor deposition (MOCVD).

Abstract: Provided are high quality metal-nitride, such as aluminum nitride (AlN), films for heat dissipation and heat spreading applications, methods of preparing the same, and deposition of high thermal conductivity heat spreading layers for use in RF devices such as power amplifiers, high electron mobility transistors, etc. Aspects of the inventive concept can be used to enable heterogeneously integrated compound semiconductor on silicon devices or can be used in in non-RF applications as the power densities of these highly scaled microelectronic devices continues to increase.