Abstract: A thin film molecular memory is provided that satisfies criteria needed to make a molecular spintronic device, based on spin crossover complexes, competitive with silicon technology. These criteria include, device implementation, a low coercive voltage (less than 1V) and low write peak currents (on the order of 104 A/cm2), a device on/off ratio >10, thin film quality, the ability to “lock” the spin state (providing nonvolatility), the ability to isothermally “unlock” and switch the spin state with voltage, conductance change with spin state, room temperature and above room temperature operation, an on-state device resistivity less than 1 ?·cm, a device fast switching speed (less than 100 ps), device endurance (on the order of 1016 switches without degradation), and the ability of having a device with a transistor channel width of 10 nm or below.

Abstract: A thin film molecular memory is provided that satisfies criteria needed to make a molecular spintronic device, based on spin crossover complexes, competitive with silicon technology. These criteria include, device implementation, a low coercive voltage (less than 1V) and low write peak currents (on the order of 104 A/cm2), a device on/off ratio >10, thin film quality, the ability to “lock” the spin state (providing nonvolatility), the ability to isothermally “unlock” and switch the spin state with voltage, conductance change with spin state, room temperature and above room temperature operation, an on-state device resistivity less than 1 ?·cm, a device fast switching speed (less than 100 ps), device endurance (on the order of 1016 switches without degradation), and the ability of having a device with a transistor channel width of 10 nm or below.