Abstract: A method including implanting carbon and fluorine into a substrate in an area of the substrate between a source/drain region and a channel, the area designated for a source/drain extension; and a source/drain extension dopant following implanting carbon and fluorine, implanting phosphorous in the area. A method including disrupting a crystal lattice of a semiconductor substrate in an area of the substrate between a source/drain region and a channel designated for a source/drain extension; after disrupting, implanting carbon and fluorine in the area; and implanting phosphorous in the area. A method including performing a boron halo implant before implanting phosphorous to form N-type source/drain extensions. An apparatus including an N-type transistor having a source/drain extension comprising carbon and phosphorous, formed in an area of a substrate between a source/drain region of the transistor and a channel of the transistor.

Abstract: The use of a carbon implant, in addition to the conventional fluorine implant, may significantly reduce the transient enhanced diffusion in P-type source drain extension regions. As a result, resistivity may be reduced, and dopant density may be increased, increasing current drive in some embodiments.

Abstract: The use of a carbon implant, in addition to the conventional fluorine implant, may significantly reduce the transient enhanced diffusion in P-type source drain extension regions. As a result, resistivity may be reduced, and dopant density may be increased, increasing current drive in some embodiments.