Patents by Inventor Aaron R. Fellis
Aaron R. Fellis has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11075127Abstract: Disclosed are methods of and apparatuses and systems for depositing a film in a multi-station deposition apparatus. The methods may include: (a) providing a substrate to a first station of the apparatus, (b) adjusting the temperature of the substrate to a first temperature, (c) depositing a first portion of the material on the substrate while the substrate is at the first temperature in the first station, (d) transferring the substrate to the second station, (e) adjusting the temperature of the substrate to a second temperature, and (f) depositing a second portion of the material on the substrate while the substrate is at the second temperature, such that the first portion and the second portion exhibit different values of a property of the material. The apparatuses and systems may include a multi-station deposition apparatus and a controller having control logic for performing one or more of (a)-(f).Type: GrantFiled: July 3, 2019Date of Patent: July 27, 2021Assignee: Lam Research CorporationInventors: Seshasayee Varadarajan, Aaron R. Fellis, Andrew John McKerrow, James Samuel Sims, Ramesh Chandrasekharan, Jon Henri
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Publication number: 20200066607Abstract: Disclosed are methods of and apparatuses and systems for depositing a film in a multi-station deposition apparatus. The methods may include: (a) providing a substrate to a first station of the apparatus, (b) adjusting the temperature of the substrate to a first temperature, (c) depositing a first portion of the material on the substrate while the substrate is at the first temperature in the first station, (d) transferring the substrate to the second station, (e) adjusting the temperature of the substrate to a second temperature, and (f) depositing a second portion of the material on the substrate while the substrate is at the second temperature, such that the first portion and the second portion exhibit different values of a property of the material. The apparatuses and systems may include a multi-station deposition apparatus and a controller having control logic for performing one or more of (a)-(f).Type: ApplicationFiled: July 3, 2019Publication date: February 27, 2020Inventors: Seshasayee Varadarajan, Aaron R. Fellis, Andrew John McKerrow, James Samuel Sims, Ramesh Chandrasekharan, Jon Henri
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Patent number: 10347547Abstract: Disclosed are methods of and apparatuses and systems for depositing a film in a multi-station deposition apparatus. The methods may include: (a) providing a substrate to a first station of the apparatus, (b) adjusting the temperature of the substrate to a first temperature, (c) depositing a first portion of the material on the substrate while the substrate is at the first temperature in the first station, (d) transferring the substrate to the second station, (e) adjusting the temperature of the substrate to a second temperature, and (f) depositing a second portion of the material on the substrate while the substrate is at the second temperature, such that the first portion and the second portion exhibit different values of a property of the material. The apparatuses and systems may include a multi-station deposition apparatus and a controller having control logic for performing one or more of (a)-(f).Type: GrantFiled: August 9, 2016Date of Patent: July 9, 2019Assignee: LAM RESEARCH CORPORATIONInventors: Seshasayee Varadarajan, Aaron R. Fellis, Andrew John McKerrow, James Samuel Sims, Ramesh Chandrasekharan, Jon Henri
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Publication number: 20180047645Abstract: Disclosed are methods of and apparatuses and systems for depositing a film in a multi-station deposition apparatus. The methods may include: (a) providing a substrate to a first station of the apparatus, (b) adjusting the temperature of the substrate to a first temperature, (c) depositing a first portion of the material on the substrate while the substrate is at the first temperature in the first station, (d) transferring the substrate to the second station, (e) adjusting the temperature of the substrate to a second temperature, and (f) depositing a second portion of the material on the substrate while the substrate is at the second temperature, such that the first portion and the second portion exhibit different values of a property of the material. The apparatuses and systems may include a multi-station deposition apparatus and a controller having control logic for performing one or more of (a)-(f).Type: ApplicationFiled: August 9, 2016Publication date: February 15, 2018Inventors: Seshasayee Varadarajan, Aaron R. Fellis, Andrew John McKerrow, James Samuel Sims, Ramesh Chandrasekharan, Jon Henri
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Patent number: 9034768Abstract: Methods and apparatuses for filling high aspect ratio features with tungsten-containing materials are provided. The method involves providing a partially fabricated semiconductor substrate and depositing a tungsten-containing layer on the substrate surface to partially fill one or more high aspect ratio features. The method continues with selective removal of a portion of the deposited layer such that more material is removed near the feature opening than inside the feature. In certain embodiments, removal may be performed at mass-transport limited conditions with less etchant available inside the feature than near its opening. Etchant species are activated before being introduced into the processing chamber and/or while inside the chamber. In specific embodiments, recombination of the activated species is substantially limited and/or controlled during removal, e.g., operation is performed at less than about 250° C. and/or less than about 5 Torr.Type: GrantFiled: July 9, 2010Date of Patent: May 19, 2015Assignee: Novellus Systems, Inc.Inventors: Anand Chandrashekar, Raashina Humayun, Michal Danek, Aaron R. Fellis, Sean Chang
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Patent number: 8835317Abstract: Methods and apparatuses for filling high aspect ratio features with tungsten-containing materials in a substantially void-free manner are provided. In certain embodiments, the method involves depositing an initial layer of a tungsten-containing material followed by selectively removing a portion of the initial layer to form a remaining layer, which is differentially passivated along the depth of the high-aspect ration feature. In certain embodiments, the remaining layer is more passivated near the feature opening than inside the feature. The method may proceed with depositing an additional layer of the same or other material over the remaining layer. The deposition rate during this later deposition operation is slower near the feature opening than inside the features due to the differential passivation of the remaining layer. This deposition variation, in turn, may aid in preventing premature closing of the feature and facilitate filling of the feature in a substantially void free manner.Type: GrantFiled: May 6, 2013Date of Patent: September 16, 2014Assignee: Novellus Systems, Inc.Inventors: Anand Chandrashekar, Raashina Humayun, Michal Danek, Aaron R. Fellis, Sean Chang
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Patent number: 8617982Abstract: Certain embodiments pertain to local interconnects formed by subtractive patterning of blanket layer of tungsten or other conductive material. The grain sizes of tungsten or other deposited metal can be grown to relatively large dimensions, which results in increased electrical conductivity due to, e.g., reduced electron scattering at grain boundaries as electrons travel from one grain to the next during conduction.Type: GrantFiled: October 3, 2011Date of Patent: December 31, 2013Assignee: Novellus Systems, Inc.Inventors: Michal Danek, Juwen Gao, Ronald A. Powell, Aaron R. Fellis
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Publication number: 20130330926Abstract: Methods and apparatuses for filling high aspect ratio features with tungsten-containing materials in a substantially void-free manner are provided. In certain embodiments, the method involves depositing an initial layer of a tungsten-containing material followed by selectively removing a portion of the initial layer to form a remaining layer, which is differentially passivated along the depth of the high-aspect ration feature. In certain embodiments, the remaining layer is more passivated near the feature opening than inside the feature. The method may proceed with depositing an additional layer of the same or other material over the remaining layer. The deposition rate during this later deposition operation is slower near the feature opening than inside the features due to the differential passivation of the remaining layer. This deposition variation, in turn, may aid in preventing premature closing of the feature and facilitate filling of the feature in a substantially void free manner.Type: ApplicationFiled: May 6, 2013Publication date: December 12, 2013Inventors: Anand Chandrashekar, Raashina Humayun, Michal Danek, Aaron R. Fellis, Sean Chang
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Patent number: 8435894Abstract: Methods and apparatuses for filling high aspect ratio features with tungsten-containing materials in a substantially void-free manner are provided. In certain embodiments, the method involves depositing an initial layer of a tungsten-containing material followed by selectively removing a portion of the initial layer to form a remaining layer, which is differentially passivated along the depth of the high-aspect ration feature. In certain embodiments, the remaining layer is more passivated near the feature opening than inside the feature. The method may proceed with depositing an additional layer of the same or other material over the remaining layer. The deposition rate during this later deposition operation is slower near the feature opening than inside the features due to the differential passivation of the remaining layer. This deposition variation, in turn, may aid in preventing premature closing of the feature and facilitate filling of the feature in a substantially void free manner.Type: GrantFiled: January 17, 2012Date of Patent: May 7, 2013Assignee: Novellus Systems, Inc.Inventors: Anand Chandrashekar, Raashina Humayun, Michal Danek, Aaron R. Fellis, Sean Chang
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Publication number: 20120115329Abstract: Methods and apparatuses for filling high aspect ratio features with tungsten-containing materials in a substantially void-free manner are provided. In certain embodiments, the method involves depositing an initial layer of a tungsten-containing material followed by selectively removing a portion of the initial layer to form a remaining layer, which is differentially passivated along the depth of the high-aspect ration feature. In certain embodiments, the remaining layer is more passivated near the feature opening than inside the feature. The method may proceed with depositing an additional layer of the same or other material over the remaining layer. The deposition rate during this later deposition operation is slower near the feature opening than inside the features due to the differential passivation of the remaining layer. This deposition variation, in turn, may aid in preventing premature closing of the feature and facilitate filling of the feature in a substantially void free manner.Type: ApplicationFiled: January 17, 2012Publication date: May 10, 2012Inventors: Anand Chandrashekar, Raashina Humayun, Michal Danek, Aaron R. Fellis, Sean Chang
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Publication number: 20120080793Abstract: Certain embodiments pertain to local interconnects formed by subtractive patterning of blanket layer of tungsten or other conductive material. The grain sizes of tungsten or other deposited metal can be grown to relatively large dimensions, which results in increased electrical conductivity due to, e.g., reduced electron scattering at grain boundaries as electrons travel from one grain to the next during conduction.Type: ApplicationFiled: October 3, 2011Publication date: April 5, 2012Inventors: Michal Danek, Juwen Gao, Ronald A. Powell, Aaron R. Fellis
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Patent number: 8124531Abstract: Methods and apparatuses for filling high aspect ratio features with tungsten-containing materials in a substantially void-free manner are provided. In certain embodiments, the method involves depositing an initial layer of a tungsten-containing material followed by selectively removing a portion of the initial layer to form a remaining layer, which is differentially passivated along the depth of the high-aspect ration feature. In certain embodiments, the remaining layer is more passivated near the feature opening than inside the feature. The method may proceed with depositing an additional layer of the same or other material over the remaining layer. The deposition rate during this later deposition operation is slower near the feature opening than inside the features due to the differential passivation of the remaining layer. This deposition variation, in turn, may aid in preventing premature closing of the feature and facilitate filling of the feature in a substantially void free manner.Type: GrantFiled: January 28, 2011Date of Patent: February 28, 2012Assignee: Novellus Systems, Inc.Inventors: Anand Chandrashekar, Raashina Humayun, Michal Danek, Aaron R. Fellis, Sean Chang
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Patent number: 8119527Abstract: Methods of filling high aspect ratio features provided on partially manufactured semiconductor substrates with tungsten-containing materials are provided. In certain embodiments, the methods include partial filling a high aspect ratio feature with a layer of tungsten-containing materials and selective removal of the partially filled materials from the feature cavity. Substrates processed using these methods have improved step coverage of the tungsten-containing materials filled into the high aspect ratio features and reduced seam sizes.Type: GrantFiled: August 4, 2009Date of Patent: February 21, 2012Assignee: Novellus Systems, Inc.Inventors: Anand Chadrashekar, Raashina Humayun, Michal Danek, Aaron R. Fellis, Sean Chang
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Publication number: 20120009785Abstract: Methods and apparatuses for filling high aspect ratio features with tungsten-containing materials are provided. The method involves providing a partially fabricated semiconductor substrate and depositing a tungsten-containing layer on the substrate surface to partially fill one or more high aspect ratio features. The method continues with selective removal of a portion of the deposited layer such that more material is removed near the feature opening than inside the feature. In certain embodiments, removal may be performed at mass-transport limited conditions with less etchant available inside the feature than near its opening. Etchant species are activated before being introduced into the processing chamber and/or while inside the chamber. In specific embodiments, recombination of the activated species is substantially limited and/or controlled during removal, e.g., operation is performed at less than about 250° C. and/or less than about 5 Torr.Type: ApplicationFiled: July 9, 2010Publication date: January 12, 2012Inventors: Anand Chandrashekar, Raashina Humayun, Michal Danek, Aaron R. Fellis, Sean Chang
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Publication number: 20110159690Abstract: Methods and apparatuses for filling high aspect ratio features with tungsten-containing materials in a substantially void-free manner are provided. In certain embodiments, the method involves depositing an initial layer of a tungsten-containing material followed by selectively removing a portion of the initial layer to form a remaining layer, which is differentially passivated along the depth of the high-aspect ration feature. In certain embodiments, the remaining layer is more passivated near the feature opening than inside the feature. The method may proceed with depositing an additional layer of the same or other material over the remaining layer. The deposition rate during this later deposition operation is slower near the feature opening than inside the features due to the differential passivation of the remaining layer. This deposition variation, in turn, may aid in preventing premature closing of the feature and facilitate filling of the feature in a substantially void free manner.Type: ApplicationFiled: January 28, 2011Publication date: June 30, 2011Inventors: Anand Chandrashekar, Raashina Humayun, Michal Danek, Aaron R. Fellis, Sean Chang
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Patent number: 7262125Abstract: Methods and apparatus for preparing a low-resistivity tungsten film on a substrate are provided. Methods involve the formation of a tungsten nucleation layer on a substrate using pulsed nucleation layer (PNL) techniques and depositing a bulk tungsten layer thereon. Methods for forming the tungsten nucleation layer involve the use of a boron-containing species, a tungsten-containing precursor, and optionally, a silane. The methods described are particularly useful for applications where thin, low resistivity films are desired, such as interconnect applications.Type: GrantFiled: March 31, 2004Date of Patent: August 28, 2007Assignee: Novellus Systems, Inc.Inventors: Panya Wongsenakhum, Aaron R. Fellis, Kaihan A. Ashtiani, Karl B. Levy, Juwen Gao, Joshua Collins, Junghwan Sung, Lana Hiului Chan
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Patent number: 7141494Abstract: A tungsten nucleation film is formed on a surface of a semiconductor substrate by alternatively providing to that surface, reducing gases and tungsten-containing gases. Each cycle of the method provides for one or more monolayers of the tungsten film. The film is conformal and has improved step coverage, even for a high aspect ratio contact hole.Type: GrantFiled: August 26, 2003Date of Patent: November 28, 2006Assignee: Novellus Systems, Inc.Inventors: Sang-Hyeob Lee, Karl B. Levy, Aaron R. Fellis, Panya Wongsenakhum, Juwen Gao, Joshua Collins, Kaihan A. Ashtiani, Junghwan Sung, Lana Hiului Chan
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Publication number: 20040202786Abstract: Methods and apparatus for preparing a low-resistivity tungsten film on a substrate are provided. Methods involve the formation of a tungsten nucleation layer on a substrate using pulsed nucleation layer (PNL) techniques and depositing a bulk tungsten layer thereon. Methods for forming the tungsten nucleation layer involve the use of a boron-containing species, a tungsten-containing precursor, and optionally, a silane. The methods described are particularly useful for applications where thin, low resistivity films are desired, such as interconnect applications.Type: ApplicationFiled: March 31, 2004Publication date: October 14, 2004Applicant: Novellus Systems, Inc.Inventors: Panya Wongsenakhum, Aaron R. Fellis, Kaihan A. Ashtiani, Karl B. Levy, Juwen Gao, Joshua Collins, Junghwan Sung, Lana Hiului Chan