Abstract: The present invention is a system and method for providing a charge detector that utilizes small feedback capacitors in a low-noise, high-gain, system that combines a differential topology in a solid-state amplifier implemented in a complementary metal-oxide semiconductor (CMOS) process with active reset, thereby achieving high dynamic range and robust operations. A custom optoelectronic system is used to measure gain, and while operating at a sampling frequency of 10 kHz, the active reset extends the dynamic range of the charge detector.

Abstract: The present invention is a system and method for providing a charge detector that utilizes small feedback capacitors in a low-noise, high-gain, system that combines a differential topology in a solid-state amplifier implemented in a complementary metal-oxide semiconductor (CMOS) process with active reset, thereby achieving high dynamic range and robust operations. A custom optoelectronic system is used to measure gain, and while operating at a sampling frequency of 10 kHz, the active reset extends the dynamic range of the charge detector.

Abstract: A system and method for thermal gradient gas chromatography wherein a front or injection end of a column is heated to a higher temperature than a back or detector end to thereby create a thermal gradient having a profile that is substantially monotonically non-increasing and has a positive second derivative, and then providing a heat source to raise the thermal gradient and cause it to remain stationary or to travel through the column while maintaining a desired profile.

Abstract: A coaxial hybrid ion trap that uses two substantially planar opposing plates to generate electrical focusing fields that simultaneously generate at least two different types or shapes of trapping regions, wherein a first trapping region is a quadrupole trapping region disposed coaxially with respect to the opposing plates, and wherein a second trapping region is a toroidal ion trap having a toroidal trapping region that is simultaneously created around the quadrupole trapping region.

Abstract: An input signal comprising electronic carriers is injected into an impact ionization device with a high electric field whereupon the electronic carriers are accelerated toward an electron collector or hole sink and subsequently ionize additional electrons and holes that accelerated toward the electron collector and hole sink respectively. When properly biased an avalanche effect may occur that is proportional to the current injected into the impact ionization device via the input electrode. As a result, the input signal is amplified to provide an amplified signal. The described amplifier may be integrated with an input device such as a photodiode, and a transimpedance output amplifier onto a common substrate resulting in high performance high density sensor arrays and the like.

Abstract: A coaxial hybrid ion trap that uses two substantially planar opposing plates to generate electrical focusing fields that simultaneously generate at least two different types or shapes of trapping regions, wherein a first trapping region is a quadrupole trapping region disposed coaxially with respect to the opposing plates, and wherein a second trapping region is a toroidal ion trap having a toroidal trapping region that is simultaneously created around the quadrupole trapping region.

Abstract: By using wafer fusion, various structures for photodetectors and photodetectors integrated with other electronics can be achieved. The use of silicon as a multiplication region and III—V compounds as an absorption region create photodetectors that are highly efficient and tailored to specific applications. Devices responsive to different regions of the optical spectrum, or that have higher efficiencies are created.

Abstract: A method of processing semiconductor films and layers, utilizing heterojunctions, to create a photodetector. Novel combinations of materials, such as silicon and indium gallium arsenide (InGaAs) are combined using wafer fusion techniques to create heterojunctions that cannot be created by any other growth methods. Devices responsive to different regions of the optical spectrum or that have higher efficiencies are created.

Abstract: By using wafer fusion, various structures for photodetectors and photodetectors integrated with other electronics can be achieved. The use of silicon as a multiplication region and III-V compounds as an absorption region create photodetectors that are highly efficient and tailored to specific applications. Devices responsive to different regions of the optical spectrum, or that have higher efficiencies are created.

Abstract: By using wafer fusion, various structures for photodetectors and photodetectors integrated with other electronics can be achieved. The use of silicon as a multiplication region and III-V compounds as an absorption region create photodetectors that are highly efficient and tailored to specific applications. Devices responsive to different regions of the optical spectrum, or that have higher efficiencies are created.