Abstract: An exemplary embodiment of the present disclosure provides a detector configured to output a signal associated with one or more interactions with subatomic particles. The detector comprises a sensor comprising a first diode comprising first semiconductor material abutting a first metal and forming a first junction, wherein the sensor is configured to be exposed to subatomic particles and a voltage reference member configured to generate a reference measurement. The sensor and the voltage reference member form a bandgap reference circuit. The present disclosure also provides methods for detecting subatomic particles from a solid-state detector comprising a first Schottky diode in electrical communication with a reference voltage member comprising a parallel circuit of two or more second Schottky diodes, wherein the first Schottky diode is configured to be exposed to subatomic particles and the second Schottky diodes of the reference voltage member are configured to generate a reference measurement.

Abstract: An exemplary embodiment of the present disclosure provides a detector configured to output a signal associated with one or more interactions with subatomic particles. The detector comprises a sensor comprising a first diode comprising first semiconductor material abutting a first metal and forming a first junction, wherein the sensor is configured to be exposed to subatomic particles and a voltage reference member configured to generate a reference measurement. The sensor and the voltage reference member form a bandgap reference circuit. The present disclosure also provides methods for detecting subatomic particles from a solid-state detector comprising a first Schottky diode in electrical communication with a reference voltage member comprising a parallel circuit of two or more second Schottky diodes, wherein the first Schottky diode is configured to be exposed to subatomic particles and the second Schottky diodes of the reference voltage member are configured to generate a reference measurement.