Patents by Inventor Aaron Scott Lukas
Aaron Scott Lukas has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 9293361Abstract: The present invention is a process for forming an air gap within a substrate, the process comprising: providing a substrate; depositing a sacrificial material by deposition of at least one sacrificial material precursor; depositing a composite layer; removal of the porogen material in the composite layer to form a porous layer and contacting the layered substrate with a removal media to substantially remove the sacrificial material and provide the air gaps within the substrate; wherein the at least one sacrificial material precursor is selected from the group consisting of: an organic porogen; silicon, and a polar solvent soluble metal oxide and mixtures thereof.Type: GrantFiled: July 3, 2014Date of Patent: March 22, 2016Assignee: Air Products and Chemicals, Inc.Inventors: Raymond Nicholas Vrtis, Dingjun Wu, Mark Leonard O'Neill, Mark Daniel Bitner, Jean Louise Vincent, Eugene Joseph Karwacki, Aaron Scott Lukas
-
Patent number: 9061317Abstract: A chemical vapor deposition method for producing a porous organosilica glass film comprising: introducing into a vacuum chamber gaseous reagents including at least one precursor selected from the group consisting of an organosilane and an organosiloxane, and a porogen that is distinct from the precursor, wherein the porogen is a C4 to C14 cyclic hydrocarbon compound having a non-branching structure and a degree of unsaturation equal to or less than 2; applying energy to the gaseous reagents in the vacuum chamber to induce reaction of the gaseous reagents to deposit a preliminary film on the substrate, wherein the preliminary film contains the porogen; and removing from the preliminary film substantially all of the labile organic material to provide the porous film with pores and a dielectric constant less than 2.6.Type: GrantFiled: April 5, 2012Date of Patent: June 23, 2015Assignee: Air Products and Chemicals, Inc.Inventors: Raymond Nicholas Vrtis, Mark Leonard O'Neill, Jean Louis Vincent, Aaron Scott Lukas, Mary Kathryn Haas
-
Patent number: 8951342Abstract: A chemical vapor deposition method for producing a porous organosilica glass film comprising: introducing into a vacuum chamber gaseous reagents including at least one precursor selected from the group consisting of an organosilane and an organosiloxane, and a porogen that is distinct from the precursor; applying energy to the gaseous reagents in the vacuum chamber to induce reaction of the gaseous reagents to deposit a preliminary film on the substrate, wherein the preliminary film contains the porogen; and removing from the preliminary film substantially all of the porogen to provide the porous film with pores and a dielectric constant less than 2.6.Type: GrantFiled: November 1, 2011Date of Patent: February 10, 2015Assignee: Air Products and Chemicals, Inc.Inventors: Raymond Nicholas Vrtis, Mark Leonard O'Neill, Jean Louise Vincent, Aaron Scott Lukas, Mary Kathryn Haas
-
Publication number: 20140363950Abstract: The present invention is a process for forming an air gap within a substrate, the process comprising: providing a substrate; depositing a sacrificial material by deposition of at least one sacrificial material precursor; depositing a composite layer; removal of the porogen material in the composite layer to form a porous layer and contacting the layered substrate with a removal media to substantially remove the sacrificial material and provide the air gaps within the substrate; wherein the at least one sacrificial material precursor is selected from the group consisting of: an organic porogen; silicon, and a polar solvent soluble metal oxide and mixtures thereof.Type: ApplicationFiled: July 3, 2014Publication date: December 11, 2014Inventors: Raymond Nicholas Vrtis, Dingjun Wu, Mark Leonard O'Neill, Mark Daniel Bitner, Jean Louise Vincent, Eugene Joseph Karwacki, JR., Aaron Scott Lukas
-
Patent number: 8846522Abstract: The present invention is a process for forming an air gap within a substrate, the process comprising: providing a substrate; depositing a sacrificial material by deposition of at least one sacrificial material precursor; depositing a composite layer; removal of the porogen material in the composite layer to form a porous layer and contacting the layered substrate with a removal media to substantially remove the sacrificial material and provide the air gaps within the substrate; wherein the at least one sacrificial material precursor is selected from the group consisting of: an organic porogen; silicon, and a polar solvent soluble metal oxide and mixtures thereof.Type: GrantFiled: February 14, 2013Date of Patent: September 30, 2014Assignee: Air Products and Chemicals, Inc.Inventors: Raymond Nicholas Vrtis, Dingjun Wu, Mark Leonard O'Neill, Mark Daniel Bitner, Jean Louise Vincent, Eugene Joseph Karwacki, Jr., Aaron Scott Lukas
-
Publication number: 20130095255Abstract: A chemical vapor deposition method for producing a porous organosilica glass film comprising: introducing into a vacuum chamber gaseous reagents including at least one precursor selected from the group consisting of an organosilane and an organosiloxane, and a porogen that is distinct from the precursor, wherein the porogen is a C4 to C14 cyclic hydrocarbon compound having a non-branching structure and a degree of unsaturation equal to or less than 2; applying energy to the gaseous reagents in the vacuum chamber to induce reaction of the gaseous reagents to deposit a preliminary film on the substrate, wherein the preliminary film contains the porogen; and removing from the preliminary film substantially all of the labile organic material to provide the porous film with pores and a dielectric constant less than 2.6.Type: ApplicationFiled: April 5, 2012Publication date: April 18, 2013Applicant: AIR PRODUCTS AND CHEMICALS, INC.Inventors: Raymond Nicholas Vrtis, Mark Leonard O'Neill, Jean Louise Vincent, Aaron Scott Lukas, Mary Kathryn Haas
-
Patent number: 8399349Abstract: The present invention is a process for forming an air gap within a substrate, the process comprising: providing a substrate; depositing a sacrificial material by deposition of at least one sacrificial material precursor; depositing a composite layer; removale of the porogen material in the composite layer to form a porous layer and contacting the layered substrate with a removal media to substantially remove the sacrificial material and provide the air gaps within the substrate; wherein the at least one sacrificial material precursor is selected from the group consisting of: an organic porogen; silicon, and a polar solvent soluble metal oxide and mixtures thereof.Type: GrantFiled: March 29, 2007Date of Patent: March 19, 2013Assignee: Air Products and Chemicals, Inc.Inventors: Raymond Nicholas Vrtis, Dingjun Wu, Mark Leonard O'Neill, Mark Daniel Bitner, Jean Louise Vincent, Eugene Joseph Karwacki, Jr., Aaron Scott Lukas
-
Publication number: 20120282415Abstract: A chemical vapor deposition method for producing a porous organosilica glass film comprising: introducing into a vacuum chamber gaseous reagents including at least one precursor selected from the group consisting of an organosilane and an organosiloxane, and a porogen that is distinct from the precursor; applying energy to the gaseous reagents in the vacuum chamber to induce reaction of the gaseous reagents to deposit a preliminary film on the substrate, wherein the preliminary film contains the porogen; and removing from the preliminary film substantially all of the porogen to provide the porous film with pores and a dielectric constant less than 2.6.Type: ApplicationFiled: November 1, 2011Publication date: November 8, 2012Applicant: Air Products and Chemicals, Inc.Inventors: Raymond Nicholas Vrtis, Mark Leonard O'Neill, Jean Louise Vincent, Aaron Scott Lukas, Mary Kathryn Haas
-
Patent number: 8293001Abstract: A porous organosilica glass (OSG) film consists of a single phase of a material represented by the formula SivOwCxHyFz, where v+w+x+y+z=100%, v is from 10 to 35 atomic %, w is from 10 to 65 atomic %, x is from 5 to 30 atomic %, y is from 10 to 50 atomic % and z is from 0 to 15 atomic %, wherein the film has pores and a dielectric constant less than 2.6.Type: GrantFiled: February 21, 2011Date of Patent: October 23, 2012Assignee: Air Products and Chemicals, Inc.Inventors: Raymond Nicholas Vrtis, Mark Leonard O'Neill, Jean Louise Vincent, Aaron Scott Lukas, Manchao Xiao, John Anthony Thomas Norman
-
Patent number: 8137764Abstract: A chemical vapor deposition process for preparing a low dielectric constant organosilicate (OSG) having enhanced mechanical properties by adjusting the amount of organic groups, such as methyl groups, within the mixture is disclosed herein. In one embodiment of the present invention, the OSG film is deposited from a mixture comprising a first silicon-containing precursor that comprises from 3 to 4 Si—O bonds per Si atom, from 0 to 1 of bonds selected from the group consisting of Si—H, Si—Br, and Si—Cl bonds per Si atom and no Si—C bonds and a second silicon-containing precursor that comprises at least one Si—C bond per Si atom. In another embodiment of the present invention, the OSG film is deposited from a mixture comprising an asymmetric silicon-containing precursor. In either embodiment, the mixture may further contain a porogen precursor to provide a porous OSG film.Type: GrantFiled: May 11, 2004Date of Patent: March 20, 2012Assignee: Air Products and Chemicals, Inc.Inventors: Jean Louise Vincent, Mark Leonard O'Neill, Raymond Nicholas Vrtis, Aaron Scott Lukas, Brian Keith Peterson, Mark Daniel Bitner
-
Publication number: 20110143032Abstract: A porous organosilica glass (OSG) film consists of a single phase of a material represented by the formula SivOwCxHyFz, where v+w+x+y+z=100%, v is from 10 to 35 atomic %, w is from 10 to 65 atomic %, x is from 5 to 30 atomic %, y is from 10 to 50 atomic % and z is from 0 to 15 atomic %, wherein the film has pores and a dielectric constant less than 2.6. The film is provided by a chemical vapor deposition method in which a preliminary film is deposited from organosilane and/or organosiloxane precursors and pore-forming agents (porogens), which can be independent of, or bonded to, the precursors. The porogens are subsequently removed to provide the porous film. Compositions, such as kits, for forming the films include porogens and precursors. Porogenated precursors are also useful for providing the film.Type: ApplicationFiled: February 21, 2011Publication date: June 16, 2011Applicant: Air Products and Chemicals, Inc.Inventors: Raymond Nicholas Vrtis, Mark Leonard O'Neill, Jean Louise Vincent, Aaron Scott Lukas, Manchao Xiao, John Anthony Thomas Norman
-
Patent number: 7943195Abstract: A porous organosilica glass (OSG) film consists of a single phase of a material represented by the formula SivOwCxHyFz, where v+w+x+y+z=100%, v is from 10 to 35 atomic %, w is from 10 to 65 atomic %, x is from 5 to 30 atomic %, y is from 10 to 50 atomic % and z is from 0 to 15 atomic %, wherein the film has pores and a dielectric constant less than 2.6. The film is provided by a chemical vapor deposition method in which a preliminary film is deposited from organosilane and/or organosiloxane precursors and pore-forming agents (porogens), which can be independent of, or bonded to, the precursors. The porogens are subsequently removed to provide the porous film. Compositions, such as kits, for forming the films include porogens and precursors. Porogenated precursors are also useful for providing the film.Type: GrantFiled: May 6, 2008Date of Patent: May 17, 2011Assignee: Air Products and Chemicals, Inc.Inventors: Raymond Nicholas Vrtis, Mark Leonard O'Neill, Jean Louise Vincent, Aaron Scott Lukas, Manchao Xiao, John Anthony Thomas Norman
-
Patent number: 7932188Abstract: Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In one aspect of the present invention, an organosilicate glass film is exposed to an ultraviolet light source wherein the film after exposure has an at least 10% or greater improvement in its mechanical properties (i.e., material hardness and elastic modulus) compared to the as-deposited film.Type: GrantFiled: October 31, 2008Date of Patent: April 26, 2011Assignee: Air Products and Chemicals, Inc.Inventors: Aaron Scott Lukas, Mark Leonard O'Neill, Jean Louise Vincent, Raymond Nicholas Vrtis, Mark Daniel Bitner, Eugene Joseph Karwacki, Jr.
-
Patent number: 7581549Abstract: A process for removing carbon-containing residues from a substrate is described herein. In one aspect, there is provided a process for removing carbon-containing residue from at least a portion of a surface of a substrate comprising: providing a process gas comprising an oxygen source, a fluorine source, an and optionally additive gas wherein the molar ratio of oxygen to fluorine contained within the process gas ranges from about 1 to about 10; activating the process gas using at least one energy source to provide reactive species; and contacting the surface of the substrate with the reactive species to volatilize and remove the carbon-containing residue from the surface.Type: GrantFiled: July 12, 2005Date of Patent: September 1, 2009Assignee: Air Products and Chemicals, Inc.Inventors: Andrew David Johnson, Hoshang Subawalla, Bing Ji, Raymond Nicholas Vrtis, Eugene Joseph Karwacki, Jr., Robert Gordon Ridgeway, Peter James Maroulis, Mark Leonard O'Neill, Aaron Scott Lukas, Stephen Andrew Motika
-
Publication number: 20090054674Abstract: Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In one aspect of the present invention, an organosilicate glass film is exposed to an ultraviolet light source wherein the film after exposure has an at least 10% or greater improvement in its mechanical properties (i.e., material hardness and elastic modulus) compared to the as-deposited film.Type: ApplicationFiled: October 31, 2008Publication date: February 26, 2009Applicant: Air Products and Chemicals, Inc.Inventors: Aaron Scott Lukas, Mark Leonard O'Neill, Jean Louise Vincent, Raymond Nicholas Vrtis, Mark Daniel Bitner, Eugene Joseph Karwacki, JR.
-
Patent number: 7470454Abstract: Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In certain embodiments of the invention, there is provided a low-temperature process to remove at least a portion of at least one pore-forming material within a composite film thereby forming a porous film. The pore-forming material may be removed via exposure to at least one energy source, preferably an ultraviolet light source, in a non-oxidizing atmosphere.Type: GrantFiled: July 21, 2003Date of Patent: December 30, 2008Assignee: Air Products and Chemicals, Inc.Inventors: Aaron Scott Lukas, Mark Leonard O'Neill, Mark Daniel Bitner, Jean Louise Vincent, Raymond Nicholas Vrtis, Eugene Joseph Karwacki, Jr.
-
Patent number: 7468290Abstract: Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In one aspect of the present invention, an organosilicate glass film is exposed to an ultraviolet light source wherein the film after exposure has an at least 10% or greater improvement in its mechanical properties (i.e., material hardness and elastic modulus) compared to the as-deposited film.Type: GrantFiled: July 21, 2003Date of Patent: December 23, 2008Assignee: Air Products and Chemicals, Inc.Inventors: Aaron Scott Lukas, Mark Leonard O'Neill, Jean Louise Vincent, Raymond Nicholas Vrtis, Mark Daniel Bitner, Eugene Joseph Karwacki, Jr.
-
Publication number: 20080271640Abstract: A porous organosilica glass (OSG) film consists of a single phase of a material represented by the formula SivOwCxHyFz, where v+w+x+y+z=100%, v is from 10 to 35 atomic %, w is from 10 to 65 atomic %, x is from 5 to 30 atomic %, y is from 10 to 50 atomic % and z is from 0 to 15 atomic %, wherein the film has pores and a dielectric constant less than 2.6. The film is provided by a chemical vapor deposition method in which a preliminary film is deposited from organosilane and/or organosiloxane precursors and pore-forming agents (porogens), which can be independent of, or bonded to, the precursors. The porogens are subsequently removed to provide the porous film. Compositions, such as kits, for forming the films include porogens and precursors. Porogenated precursors are also useful for providing the film.Type: ApplicationFiled: May 6, 2008Publication date: November 6, 2008Applicant: Air Products and Chemicals, Inc.Inventors: Raymond Nicholas Vrtis, Mark Leonard O'Neill, Jean Louise Vincent, Aaron Scott Lukas, Manchao Xiao, John Anthony Thomas Norman
-
Publication number: 20080268177Abstract: A chemical vapor deposition method for producing a porous organosilica glass film comprising: introducing into a vacuum chamber gaseous reagents including at least one precursor selected from the group consisting of an organosilane and an organosiloxane, and a porogen that is distinct from the precursor, wherein the porogen is a C4 to C14 cyclic hydrocarbon compound having a non-branching structure and a degree of unsaturation equal to or less than 2; applying energy to the gaseous reagents in the vacuum chamber to induce reaction of the gaseous reagents to deposit a preliminary film on the substrate, wherein the preliminary film contains the porogen; and removing from the preliminary film substantially all of the labile organic material to provide the porous film with pores and a dielectric constant less than 2.6.Type: ApplicationFiled: May 5, 2008Publication date: October 30, 2008Applicant: Air Products and Chemicals, Inc.Inventors: Raymond Nicholas Vrtis, Mark Leonard O'Neill, Jean Louis Vincent, Aaron Scott Lukas, Mary Kathryn Haas
-
Patent number: 7404990Abstract: Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In certain embodiments of the invention, there is provided a low-temperature process to remove at least a portion of at least one pore-forming phase within a multiphasic film thereby forming a porous film. The pore-forming phase may be removed via exposure to at least one energy source, preferably an ultraviolet light source, in a non-oxidizing atmosphere.Type: GrantFiled: November 14, 2002Date of Patent: July 29, 2008Assignee: Air Products and Chemicals, Inc.Inventors: Aaron Scott Lukas, Mark Leonard O'Neill, Mark Daniel Bitner, Jean Louise Vincent, Raymond Nicholas Vrtis, Eugene Joseph Karwacki, Jr.